Specifications
| Type | Description |
|---|---|
| Part Number | SI2328DS |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Manufacturer Detail | Vishay Siliconix |
| Document Part Number | Si2328DS |
| Device Polarity | N-channel |
| Drain-Source Voltage Rating | 100 V |
| MOSFET Technology | Vertical DMOS |
| Model Type | Macro Model / Sub-circuit Model |
| SPICE MOS Level | Level 3 MOS |
| Application Coverage | Linear and switching applications |
| Model Temperature Range | -55 °C to +125 °C |
| Gate Drive Range | 0 V to 10 V |
| Gate Threshold Voltage | 3 V simulated; VDS = VGS, ID = 250 μA, TJ = 25 °C |
| On-State Drain Current | 23 A simulated; VDS ≥ 15 V, VGS = 10 V, TJ = 25 °C |
| Drain-Source On-State Resistance | 0.205 Ω simulated; VGS = 10 V, ID = 1.5 A, TJ = 25 °C |
| Drain-Source On-State Resistance | 0.195 Ω measured; VGS = 10 V, ID = 1.5 A, TJ = 25 °C |
| Forward Transconductance | 3.4 S simulated; VDS = 15 V, ID = 1.5 A, TJ = 25 °C |
| Forward Transconductance | 4 S measured; VDS = 15 V, ID = 1.5 A, TJ = 25 °C |
| Diode Forward Voltage | 0.78 V simulated; IS = 1 A, VGS = 0 V, TJ = 25 °C |
| Diode Forward Voltage | 0.80 V measured; IS = 1 A, VGS = 0 V, TJ = 25 °C |
| Total Gate Charge | 2.7 nC simulated; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Total Gate Charge | 3.3 nC measured; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Gate-Source Charge | 0.47 nC simulated; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Gate-Source Charge | 0.47 nC measured; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Gate-Drain Charge | 1.45 nC simulated; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Gate-Drain Charge | 1.45 nC measured; VDS = 10 V, VGS = 10 V, ID = 1.5 A |
| Package Case | Not specified in provided datasheet content |
| Datasheet Status | request_only |
Product Overview
SI2328DS is presented in the provided Vishay Siliconix datasheet content as an N-channel 100 V drain-source MOSFET SPICE model. The model represents a Vertical DMOS structure and is supplied as a macro model or sub-circuit model using Level 3 MOS behavior for circuit simulation work.
The extracted model data covers linear and switching applications. The datasheet states that the model is optimized and accurate over a -55 °C to +125 °C temperature range, with model extraction based on a pulsed gate-drive range from 0 V to 10 V.
Electrical model comparison data includes a 3 V simulated gate threshold voltage at VDS = VGS and ID = 250 μA, 23 A simulated on-state drain current at VGS = 10 V, and drain-source on-state resistance of 0.205 Ω simulated versus 0.195 Ω measured at ID = 1.5 A. Package and assembly details are not specified in the provided datasheet content.
Key Features
- N-channel MOSFET model with 100 V drain-source rating
- Vertical DMOS technology represented in SPICE simulation
- Macro model or sub-circuit model format
- Level 3 MOS behavior specified for the model
- Covers linear and switching application simulations
- Optimized model range from -55 °C to +125 °C
- Gate-drive extraction range from 0 V to 10 V
- 3 V simulated gate threshold at 250 μA
- 0.205 Ω simulated on-state resistance at 1.5 A
- 2.7 nC simulated total gate charge at 10 V
Typical Applications
- Linear application simulations
- Switching application simulations
- 100 V MOSFET circuit models
- Gate-drive behavior evaluation
- Body-diode voltage modeling
- Temperature-range simulation studies
Procurement Notes
When requesting a quote for SI2328DS, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SI2328DS?
The provided datasheet content identifies SI2328DS as an N-channel 100 V MOSFET SPICE model from Vishay Siliconix, using Vertical DMOS technology and a macro model or sub-circuit model format.
What applications does the SI2328DS model cover?
The extracted datasheet facts state that the SI2328DS SPICE model is applicable to linear and switching applications. No additional application categories are specified in the provided content.
Is the package case specified for SI2328DS?
No package case is specified in the provided datasheet content. The extracted facts only identify the model type, electrical parameters, temperature range, and application coverage.
What temperature range is stated for the model?
The SI2328DS model is stated as optimized and accurate over a -55 °C to +125 °C temperature range, according to the extracted manufacturer datasheet facts.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.