Specifications
| Type | Description |
|---|---|
| Part Number | SI7456CD |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | PowerPAK SO-8, 6.15 mm x 5.15 mm nominal; package dimensions D=5.15 mm nom, E=6.15 mm nom, A=1.04 mm nom |
| Drain-Source Voltage | 100 V; Absolute maximum rating, TA=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; Absolute maximum rating, TA=25°C unless otherwise noted |
| Continuous Drain Current | 27.5 A; TC=25°C, TJ=150°C |
| Continuous Drain Current | 22 A; TC=70°C, TJ=150°C |
| Continuous Drain Current | 10.3 A; TA=25°C, surface mounted on 1 in x 1 in FR4 board, t=10 s |
| Continuous Drain Current | 8.2 A; TA=70°C, surface mounted on 1 in x 1 in FR4 board, t=10 s |
| Pulsed Drain Current | 50 A; Absolute maximum rating |
| Continuous Source-Drain Diode Current | 25 A; TC=25°C |
| Continuous Source-Drain Diode Current | 4.5 A; TA=25°C, surface mounted on 1 in x 1 in FR4 board, t=10 s |
| Single Pulse Avalanche Current | 15 A; L=0.1 mH |
| Single Pulse Avalanche Energy | 11.2 mJ; L=0.1 mH |
| Maximum Power Dissipation | 35.7 W; TC=25°C |
| Maximum Power Dissipation | 22.8 W; TC=70°C |
| Maximum Power Dissipation | 5 W; TA=25°C, surface mounted on 1 in x 1 in FR4 board, t=10 s |
| Maximum Power Dissipation | 3.2 W; TA=70°C, surface mounted on 1 in x 1 in FR4 board, t=10 s |
| Operating Junction and Storage Temperature Range | -55 to 150 °C; Absolute maximum rating |
| Soldering Peak Temperature | 260 °C; Soldering recommendations; leadless package, manual soldering not recommended for rework |
| Junction-to-Ambient Thermal Resistance | 20 °C/W typ, 25 °C/W max; t ≤ 10 s, surface mounted on 1 in x 1 in FR4 board |
| Junction-to-Ambient Thermal Resistance | 70 °C/W max; Steady-state maximum condition noted in datasheet |
| Junction-to-Case Thermal Resistance | 2.9 °C/W typ, 3.5 °C/W max; Drain, steady state |
| Drain-Source Breakdown Voltage | 100 V min; VGS=0 V, ID=250 µA, TJ=25°C |
| Drain-Source Voltage Temperature Coefficient | 47 mV/°C typ; ID=250 µA |
| Gate-Source Threshold Voltage Temperature Coefficient | -5.4 mV/°C typ; ID=250 µA |
| Gate-Source Threshold Voltage | 1.2 V min, 2.8 V max; VDS=VGS, ID=250 µA |
| Gate-Source Leakage | ±100 nA max; VDS=0 V, VGS=±20 V |
| Zero Gate Voltage Drain Current | 1 µA max; VDS=100 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 10 µA max; VDS=100 V, VGS=0 V, TJ=55°C |
| On-State Drain Current | 30 A min; VDS≥5 V, VGS=10 V; pulse test |
| Drain-Source On-State Resistance | 0.0195 Ω typ, 0.0235 Ω max; VGS=10 V, ID=10 A; pulse test |
| Drain-Source On-State Resistance | 0.0204 Ω typ, 0.0245 Ω max; VGS=7.5 V, ID=9 A; pulse test |
| Drain-Source On-State Resistance | 0.026 Ω typ, 0.0315 Ω max; VGS=4.5 V, ID=8 A; pulse test |
| Forward Transconductance | 25 S typ; VDS=10 V, ID=10 A; pulse test |
| Input Capacitance | 730 pF typ; VDS=50 V, VGS=0 V, f=1 MHz |
| Output Capacitance | 425 pF typ; VDS=50 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | 30 pF typ; VDS=50 V, VGS=0 V, f=1 MHz |
| Total Gate Charge | 15 nC typ, 23 nC max; VDS=50 V, VGS=10 V, ID=10 A |
| Total Gate Charge | 11.6 nC typ, 18 nC max; VDS=50 V, VGS=7.5 V, ID=10 A |
| Total Gate Charge | 7.7 nC typ, 12 nC max; VDS=50 V, VGS=4.5 V, ID=10 A |
| Gate-Source Charge | 2 nC typ; VDS=50 V, VGS=4.5 V, ID=10 A |
| Gate-Drain Charge | 3.7 nC typ; VDS=50 V, VGS=4.5 V, ID=10 A |
| Gate Resistance | 1 Ω min, 5 Ω typ, 10 Ω max; f=1 MHz |
| Turn-On Delay Time | 9 ns typ, 18 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Rise Time | 13 ns typ, 26 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Turn-Off Delay Time | 22 ns typ, 44 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Fall Time | 10 ns typ, 20 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Turn-On Delay Time | 11 ns typ, 22 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=7.5 V, Rg=1 Ω |
| Rise Time | 14 ns typ, 28 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=7.5 V, Rg=1 Ω |
| Turn-Off Delay Time | 20 ns typ, 40 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=7.5 V, Rg=1 Ω |
| Fall Time | 9 ns typ, 18 ns max; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=7.5 V, Rg=1 Ω |
| Continuous Source-Drain Diode Current | 25 A; TC=25°C |
| Pulse Diode Forward Current | 50 A; Pulse test |
| Body Diode Voltage | 0.79 V typ, 1.1 V max; IS=4 A |
| Body Diode Reverse Recovery Time | 34 ns typ, 68 ns max; IF=5 A, dI/dt=100 A/µs, TJ=25°C |
| Body Diode Reverse Recovery Charge | 32 nC typ, 64 nC max; IF=5 A, dI/dt=100 A/µs, TJ=25°C |
| Reverse Recovery Fall Time | 16 ns typ; IF=5 A, dI/dt=100 A/µs, TJ=25°C |
| Reverse Recovery Rise Time | 18 ns typ; IF=5 A, dI/dt=100 A/µs, TJ=25°C |
| Package Dimension A | 0.97 mm min, 1.04 mm nom, 1.12 mm max; PowerPAK SO-8 package mechanical dimension |
| Package Dimension b | 0.33 mm min, 0.41 mm nom, 0.51 mm max; PowerPAK SO-8 package mechanical dimension |
| Package Dimension D | 5.05 mm min, 5.15 mm nom, 5.26 mm max; PowerPAK SO-8 package mechanical dimension |
| Package Dimension E | 6.05 mm min, 6.15 mm nom, 6.25 mm max; PowerPAK SO-8 package mechanical dimension |
| Terminal Pitch | 1.27 mm BSC; PowerPAK SO-8 package mechanical dimension e |
| Ordering Information | Si7456CDP-T1-GE3; Lead (Pb)-free and halogen-free ordering part number |
| Datasheet Status | request_only |
Product Overview
The SI7456CD is a Vishay N-channel power MOSFET for Power_Management use. Datasheet ratings identify a 100 V drain-source voltage limit, ±20 V gate-source voltage limit, and continuous drain current ratings up to 27.5 A at TC=25°C with TJ=150°C. Board-mounted current ratings are also specified, including 10.3 A at TA=25°C for a 1 in x 1 in FR4 board with a 10 s condition.
Its conduction characteristics include 100 V minimum drain-source breakdown voltage, 1.2 V to 2.8 V gate-source threshold voltage, and drain-source on-state resistance down to 0.0195 Ω typical at VGS=10 V and ID=10 A. Gate charge is specified at 15 nC typical and 23 nC maximum for VGS=10 V, with additional 7.5 V and 4.5 V drive data.
The PowerPAK SO-8 package is defined with nominal D=5.15 mm, E=6.15 mm, and A=1.04 mm dimensions, plus 1.27 mm BSC terminal pitch. Thermal data includes 2.9°C/W typical junction-to-case resistance and 20°C/W typical junction-to-ambient resistance for the 10 s FR4 condition. The soldering peak temperature is 260°C, and the datasheet notes that manual soldering is not recommended for rework on the leadless package.
Key Features
- 100 V drain-source voltage absolute maximum rating
- ±20 V gate-source voltage absolute maximum rating
- 27.5 A continuous drain current at TC=25°C
- 50 A pulsed drain current absolute maximum rating
- 0.0235 Ω maximum on-resistance at 10 V gate drive
- 15 nC typical total gate charge at 10 V
- 730 pF typical input capacitance at 1 MHz
- 34 ns typical body-diode reverse recovery time
- PowerPAK SO-8 package with 1.27 mm terminal pitch
- 260°C soldering peak temperature for leadless package
Typical Applications
- Power management switching stages
- 100 V MOSFET power rails
- Board-mounted power switches
- Pulsed load switching
- Body-diode conduction paths
- Avalanche-rated switching circuits
- Compact PowerPAK SO-8 layouts
Procurement Notes
When requesting a quote for SI7456CD, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the SI7456CD?
The SI7456CD is a Vishay N-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify it in a PowerPAK SO-8 package with nominal D=5.15 mm, E=6.15 mm, and A=1.04 mm package dimensions.
What voltage and current ratings are specified for SI7456CD?
The device has a 100 V drain-source voltage absolute maximum rating and a ±20 V gate-source voltage rating. Continuous drain current is specified as 27.5 A at TC=25°C and 22 A at TC=70°C, both with TJ=150°C.
What on-resistance values are listed for different gate drives?
The datasheet facts list 0.0195 Ω typical and 0.0235 Ω maximum at VGS=10 V and ID=10 A, 0.0204 Ω typical and 0.0245 Ω maximum at VGS=7.5 V and ID=9 A, and 0.026 Ω typical and 0.0315 Ω maximum at VGS=4.5 V and ID=8 A.
What thermal resistance data is available for this MOSFET?
Junction-to-case thermal resistance is specified as 2.9°C/W typical and 3.5°C/W maximum for the drain in steady state. Junction-to-ambient thermal resistance is 20°C/W typical and 25°C/W maximum for t≤10 s on a 1 in x 1 in FR4 board, with 70°C/W maximum also noted for steady state.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.