Specifications
| Type | Description |
|---|---|
| Part Number | SIHFR224 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | DPAK (TO-252), TO-252AA; body D=5.97-6.22 mm, E=6.35-6.73 mm, H=9.40-10.41 mm |
| Drain-Source Voltage | 250 V |
| Gate-Source Voltage | ±20 V |
| Continuous Drain Current | 3.8 A |
| Continuous Drain Current | 2.4 A |
| Pulsed Drain Current | 15 A |
| Linear Derating Factor | 0.33 W/°C |
| Linear Derating Factor, PCB Mount | 0.020 W/°C |
| Single Pulse Avalanche Energy | 130 mJ |
| Repetitive Avalanche Current | 3.8 A |
| Repetitive Avalanche Energy | 4.2 mJ |
| Maximum Power Dissipation | 42 W |
| Maximum Power Dissipation, PCB Mount | 2.5 W |
| Peak Diode Recovery dV/dt | 4.8 V/ns |
| Operating Junction Temperature Range | -55 to +150 °C |
| Storage Temperature Range | -55 to +150 °C |
| Soldering Peak Temperature | 260 °C |
| Junction-to-Ambient Thermal Resistance, PCB Mount | 50 °C/W max |
| Junction-to-Ambient Thermal Resistance | 110 °C/W max |
| Junction-to-Case Thermal Resistance | 3.0 °C/W max |
| Drain-Source Breakdown Voltage | 250 V min |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.36 V/°C typ |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max |
| Gate-Source Leakage | ±100 nA max |
| Zero Gate Voltage Drain Current | 25 µA max |
| Zero Gate Voltage Drain Current | 250 µA max |
| Drain-Source On-State Resistance | 1.1 Ω max |
| Forward Transconductance | 1.5 S min |
| Input Capacitance | 260 pF typ |
| Output Capacitance | 77 pF typ |
| Reverse Transfer Capacitance | 15 pF typ |
| Total Gate Charge | 14 nC max |
| Gate-Source Charge | 2.7 nC max |
| Gate-Drain Charge | 7.8 nC max |
| Turn-On Delay Time | 7.0 ns typ |
| Rise Time | 13 ns typ |
| Turn-Off Delay Time | 20 ns typ |
| Fall Time | 12 ns typ |
| Internal Drain Inductance | 4.5 nH typ |
| Internal Source Inductance | 7.5 nH typ |
| Continuous Source-Drain Diode Current | 3.8 A max |
| Pulsed Diode Forward Current | 15 A max |
| Body Diode Voltage | 1.8 V max |
| Body Diode Reverse Recovery Time | 200 ns typ, 400 ns max |
| Body Diode Reverse Recovery Charge | 0.93 µC typ, 1.9 µC max |
| Forward Turn-On Time | Intrinsic turn-on time is negligible |
| Configuration | Single |
| Package Type | DPAK (TO-252) |
| Lead Finish / Material Category | Lead (Pb)-free and halogen-free |
| Datasheet Status | request_only |
Product Overview
Vishay SIHFR224 is a single N-channel power MOSFET supplied as a surface-mount DPAK (TO-252) ordering option. The package case is DPAK (TO-252), TO-252AA, with body dimensions D=5.97-6.22 mm, E=6.35-6.73 mm, and H=9.40-10.41 mm. The SiHFR224-GE3 ordering option is listed as lead (Pb)-free and halogen-free.
The device is rated for 250 V drain-source voltage and ±20 V gate-source voltage at TC=25°C. Continuous drain current is 3.8 A at TC=25°C and 2.4 A at TC=100°C with VGS=10 V, while pulsed drain current is 15 A. Electrical parameters include 1.1 Ω maximum RDS(on), 14 nC maximum total gate charge, 260 pF typical input capacitance, and 7 ns typical turn-on delay under the stated test conditions.
Thermal and ruggedness data include 42 W maximum power dissipation at TC=25°C, 3.0°C/W maximum junction-to-case thermal resistance, 130 mJ single-pulse avalanche energy, and -55°C to +150°C operating and storage temperature ranges. These facts support use in power switching, load control, and circuits requiring evaluation of avalanche and body-diode behavior.
Key Features
- 250 V drain-source voltage rating
- ±20 V gate-source voltage absolute maximum
- 3.8 A continuous drain current at TC=25°C
- 15 A pulsed drain current rating
- 1.1 Ω maximum on-state resistance at VGS=10 V
- 14 nC maximum total gate charge
- 260 pF typical input capacitance
- 130 mJ single-pulse avalanche energy
- 3.0 °C/W maximum junction-to-case thermal resistance
- DPAK TO-252 surface-mount package option
- Lead-free and halogen-free ordering option
Typical Applications
- Power switching circuits
- Load control stages
- DPAK surface-mount power designs
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Gate-driven MOSFET power stages
- Thermally managed PCB assemblies
Procurement Notes
When requesting a quote for SIHFR224, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SIHFR224?
SIHFR224 is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts list a DPAK (TO-252) surface-mount package option and a 250 V drain-source voltage rating.
What current ratings are specified for SIHFR224?
With VGS=10 V, the continuous drain current is 3.8 A at TC=25°C and 2.4 A at TC=100°C. The pulsed drain current rating is 15 A, limited by maximum junction temperature.
What thermal limits apply to this MOSFET?
The datasheet facts specify 42 W maximum power dissipation at TC=25°C, 3.0°C/W maximum junction-to-case thermal resistance, 50°C/W maximum junction-to-ambient on a 1 in² PCB, and an operating junction range of -55°C to +150°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.