Specifications
| Type | Description |
|---|---|
| Part Number | SIHFR921 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | DPAK (TO-252); TO-252AA dimensions include A=2.18-2.39 mm, D=5.97-6.22 mm, E=6.35-6.73 mm, H=9.40-10.41 mm or 9.94-10.34 mm depending facility code |
| Drain-Source Voltage | -250 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | -2.7 A; VGS=-10 V, TC=25°C |
| Continuous Drain Current | -1.7 A; VGS=-10 V, TC=100°C |
| Pulsed Drain Current | -11 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear Derating Factor | 0.40 W/°C; TC=25°C unless otherwise noted |
| Single Pulse Avalanche Energy | 100 mJ; starting TJ=25°C, L=27 mH, Rg=25 Ω, IAS=-2.7 A |
| Repetitive Avalanche Current | -2.7 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 5.0 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 50 W; TC=25°C |
| Peak Diode Recovery dV/dt | -5.0 V/ns; ISD≤-2.7 A, dI/dt≤600 A/μs, VDD≤VDS, TJ≤150°C |
| Operating Junction and Storage Temperature Range | -55 to +150 °C; TJ, Tstg |
| Soldering Peak Temperature | 260 °C; for 10 s, 1.6 mm from case |
| Maximum Junction-to-Ambient Thermal Resistance | 110 °C/W max; RthJA |
| Maximum Junction-to-Ambient Thermal Resistance, PCB Mount | 50 °C/W max; RthJA, mounted on 1 inch square PCB, FR-4 or G-10 material |
| Maximum Junction-to-Case Thermal Resistance | 2.5 °C/W max; RthJC, drain |
| Drain-Source Breakdown Voltage | -250 V min; VGS=0 V, ID=-250 μA, TJ=25°C |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.25 V/°C typ; referenced to 25°C, ID=-1 mA |
| Gate-Source Threshold Voltage | -2.0 to -4.0 V; VDS=VGS, ID=-250 μA, TJ=25°C |
| Gate-Source Leakage | ±100 nA max; VGS=±20 V |
| Zero Gate Voltage Drain Current | -100 μA max; VDS=-250 V, VGS=0 V |
| Zero Gate Voltage Drain Current | -500 μA max; VDS=-200 V, VGS=0 V, TJ=125°C |
| Drain-Source On-State Resistance | 3.0 Ω max; VGS=-10 V, ID=-1.7 A, pulse width ≤300 μs, duty cycle ≤2% |
| Forward Transconductance | 0.9 S min; VDS=-50 V, ID=-1.7 A |
| Input Capacitance | 220 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Output Capacitance | 75 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 11 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Total Gate Charge | 14 nC max; ID=-1.7 A, VDS=-200 V, VGS=-10 V |
| Gate-Source Charge | 3.1 nC max; ID=-1.7 A, VDS=-200 V, VGS=-10 V |
| Gate-Drain Charge | 6.8 nC max; ID=-1.7 A, VDS=-200 V, VGS=-10 V |
| Turn-On Delay Time | 11 ns typ; VDD=-125 V, ID=-1.7 A, Rg=21 Ω, RD=70 Ω |
| Rise Time | 20 ns typ; VDD=-125 V, ID=-1.7 A, Rg=21 Ω, RD=70 Ω |
| Turn-Off Delay Time | 14 ns typ; VDD=-125 V, ID=-1.7 A, Rg=21 Ω, RD=70 Ω |
| Fall Time | 17 ns typ; VDD=-125 V, ID=-1.7 A, Rg=21 Ω, RD=70 Ω |
| Internal Drain Inductance | 4.5 nH typ; between lead 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | -2.7 A max; MOSFET body diode |
| Pulsed Diode Forward Current | -11 A max; MOSFET body diode, repetitive rating |
| Body Diode Voltage | -5.8 V max; TJ=25°C, IS=-2.7 A, VGS=0 V, pulse width ≤300 μs, duty cycle ≤2% |
| Body Diode Reverse Recovery Time | 150 ns typ, 220 ns max; TJ=25°C, IF=-1.7 A, dI/dt=100 A/μs |
| Body Diode Reverse Recovery Charge | 870 nC typ, 1300 nC max; TJ=25°C, IF=-1.7 A, dI/dt=100 A/μs |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on dominated by source and drain inductance |
| Datasheet Status | request_only |
Product Overview
The Vishay SIHFR921 is a P-channel power MOSFET for Power_Management designs requiring a -250 V drain-source rating. Its absolute maximum ratings include ±20 V gate-source voltage, -2.7 A continuous drain current at TC=25°C, -1.7 A at TC=100°C, and -11 A pulsed drain current with pulse width limited by maximum junction temperature.
The device is provided in a DPAK (TO-252) package. The TO-252AA dimensional data includes A=2.18-2.39 mm, D=5.97-6.22 mm, E=6.35-6.73 mm, and H=9.40-10.41 mm or 9.94-10.34 mm depending on facility code. Assembly limits include 260°C soldering peak temperature for 10 seconds at 1.6 mm from the case.
Key electrical characteristics include -2.0 to -4.0 V gate-source threshold voltage, 3.0 Ω maximum on-state resistance, 0.9 S minimum forward transconductance, 220 pF typical input capacitance, and 14 nC maximum total gate charge. Thermal ratings include 2.5°C/W maximum junction-to-case resistance and up to 50°C/W junction-to-ambient resistance when mounted on a 1 inch square FR-4 or G-10 PCB.
Key Features
- -250 V drain-source voltage rating
- ±20 V gate-source voltage absolute maximum rating
- -2.7 A continuous drain current at TC=25°C
- -11 A pulsed drain current repetitive rating
- 50 W maximum power dissipation at TC=25°C
- 3.0 Ω maximum on-state resistance at VGS=-10 V
- 14 nC maximum total gate charge
- 11 ns typical turn-on delay time
- 2.5°C/W maximum junction-to-case thermal resistance
- -55 to +150°C junction and storage range
Typical Applications
- P-channel power switching
- High-voltage load control
- Power management switching stages
- Body-diode conduction paths
- Avalanche-rated switching circuits
- DPAK surface-mount power designs
Procurement Notes
When requesting a quote for SIHFR921, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the SIHFR921?
The SIHFR921 is a Vishay P-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify a DPAK (TO-252) package and a -250 V drain-source voltage rating.
What current rating applies at case temperature?
At VGS=-10 V, the SIHFR921 is rated for -2.7 A continuous drain current at TC=25°C and -1.7 A at TC=100°C. Pulsed drain current is listed as -11 A under the repetitive rating condition.
What are the main thermal ratings for SIHFR921?
Thermal facts list 110°C/W maximum junction-to-ambient resistance, 50°C/W maximum junction-to-ambient resistance on a 1 inch square FR-4 or G-10 PCB, and 2.5°C/W maximum junction-to-case resistance at the drain.
What gate-drive and charge values are specified?
The SIHFR921 has a ±20 V gate-source voltage absolute maximum rating, a -2.0 to -4.0 V gate-source threshold voltage, and 14 nC maximum total gate charge at ID=-1.7 A, VDS=-200 V, and VGS=-10 V.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.