Specifications
| Type | Description |
|---|---|
| Part Number | SIHFR931 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | DPAK (TO-252), TO-252AA; body D 5.97-6.22 mm, E 6.35-6.73 mm, H 9.40-10.41 mm or 9.94-10.34 mm depending facility code |
| Drain-Source Voltage | -400 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | -1.8 A; VGS=-10 V, TC=25°C |
| Continuous Drain Current | -1.1 A; VGS=-10 V, TC=100°C |
| Pulsed Drain Current | -7.2 A; pulse width limited by maximum junction temperature |
| Linear Derating Factor | 0.40 W/°C; absolute maximum rating |
| Single Pulse Avalanche Energy | 92 mJ; starting TJ=25°C, L=57 mH, Rg=25 Ω, IAS=-1.8 A |
| Repetitive Avalanche Current | -1.8 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 5.0 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 50 W; TC=25°C |
| Peak Diode Recovery dV/dt | -24 V/ns; ISD≤-1.1 A, dI/dt≤450 A/μs, VDD≤VDS, TJ≤150°C |
| Operating Junction and Storage Temperature Range | -55 to +150 °C; TJ, Tstg |
| Soldering Peak Temperature | 300 °C; for 10 s, 1.6 mm from case |
| Maximum Junction-to-Ambient Thermal Resistance | 110 °C/W max; RthJA |
| Maximum Junction-to-Ambient Thermal Resistance, PCB Mount | 50 °C/W max; RthJA, mounted on 1 inch square PCB, FR-4 or G-10 material |
| Maximum Junction-to-Case Thermal Resistance | 2.5 °C/W max; RthJC, junction-to-case drain |
| Drain-Source Breakdown Voltage | -400 V min; VGS=0 V, ID=-250 μA |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.41 V/°C typ; referenced to 25°C, ID=-1 mA |
| Gate-Source Threshold Voltage | -2.0 V min, -4.0 V max; VDS=VGS, ID=-250 μA |
| Gate-Source Leakage | ±100 nA max; VGS=±20 V |
| Zero Gate Voltage Drain Current | -100 μA max; VDS=-400 V, VGS=0 V |
| Zero Gate Voltage Drain Current | -500 μA max; VDS=-320 V, VGS=0 V, TJ=125°C |
| Drain-Source On-State Resistance | 7.0 Ω max; VGS=-10 V, ID=-1.1 A, pulse width ≤300 μs, duty cycle ≤2% |
| Forward Transconductance | 0.91 S min; VDS=-50 V, ID=-1.1 A |
| Input Capacitance | 270 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Output Capacitance | 50 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 8.0 pF typ; VGS=0 V, VDS=-25 V, f=1.0 MHz |
| Total Gate Charge | 13 nC max; ID=-1.1 A, VDS=-320 V, VGS=-10 V |
| Gate-Source Charge | 3.2 nC max; ID=-1.1 A, VDS=-320 V, VGS=-10 V |
| Gate-Drain Charge | 5.0 nC max; ID=-1.1 A, VDS=-320 V, VGS=-10 V |
| Turn-On Delay Time | 11 ns typ; VDD=-200 V, ID=-1.1 A, Rg=21 Ω, RD=180 Ω |
| Rise Time | 25 ns typ; VDD=-200 V, ID=-1.1 A, Rg=21 Ω, RD=180 Ω |
| Turn-Off Delay Time | 100 ns typ; VDD=-200 V, ID=-1.1 A, Rg=21 Ω, RD=180 Ω |
| Fall Time | 24 ns typ; VDD=-200 V, ID=-1.1 A, Rg=21 Ω, RD=180 Ω |
| Internal Drain Inductance | 4.5 nH typ; between lead 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | -1.9 A max; MOSFET symbol showing integral reverse p-n junction diode |
| Pulsed Diode Forward Current | -7.6 A max; pulse width limited by maximum junction temperature |
| Body Diode Voltage | -4.0 V max; TJ=25°C, IS=-1.1 A, VGS=0 V, pulse width ≤300 μs, duty cycle ≤2% |
| Body Diode Reverse Recovery Time | 170 ns typ, 260 ns max; TJ=25°C, IF=-1.1 A, dI/dt=100 A/μs |
| Body Diode Reverse Recovery Charge | 640 nC typ, 960 nC max; TJ=25°C, IF=-1.1 A, dI/dt=100 A/μs |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Configuration | Single; product summary |
| Polarity | P-channel; device feature and symbol description |
| Package Mounting Style | Surface-mount; SiHFR9310 / IRFR9310 in DPAK TO-252 |
| Datasheet Status | request_only |
Product Overview
The SIHFR931 is a Vishay single P-channel power MOSFET for Power_Management designs requiring a -400 V drain-source rating. Its absolute maximum ratings include ±20 V gate-source voltage, -7.2 A pulsed drain current, 50 W maximum power dissipation at TC=25°C, and a -55 to +150°C operating junction and storage temperature range.
The device is offered in a surface-mount DPAK (TO-252), TO-252AA package. Package body dimensions are specified with D from 5.97 to 6.22 mm and E from 6.35 to 6.73 mm, with H listed as 9.40 to 10.41 mm or 9.94 to 10.34 mm depending on facility code. Assembly-related ratings include 300°C soldering peak temperature for 10 s at 1.6 mm from the case.
Electrical parameters include -400 V minimum drain-source breakdown voltage, -2.0 V to -4.0 V gate-source threshold voltage, 7.0 Ω maximum on-state resistance at VGS=-10 V and ID=-1.1 A, and 0.91 S minimum forward transconductance. The datasheet also specifies avalanche energy, reverse recovery behavior, capacitances, gate charge, switching times, internal inductances, and thermal resistance for layout and power dissipation analysis.
Key Features
- P-channel power MOSFET with single configuration
- -400 V drain-source voltage absolute maximum rating
- ±20 V gate-source voltage absolute maximum rating
- -1.8 A continuous drain current at TC=25°C
- 7.0 Ω maximum on-state resistance at VGS=-10 V
- 13 nC maximum total gate charge
- 50 W maximum power dissipation at TC=25°C
- 92 mJ single pulse avalanche energy rating
- Surface-mount DPAK TO-252 package
- -55 to +150°C junction and storage range
Typical Applications
- High-voltage P-channel switching
- Surface-mount power management
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Thermally managed PCB assemblies
- Gate-charge constrained drive circuits
Procurement Notes
When requesting a quote for SIHFR931, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the SIHFR931?
The SIHFR931 is a Vishay P-channel power MOSFET in the Power_Management category. The datasheet identifies it as a single P-channel device supplied in a surface-mount DPAK TO-252 package.
What voltage and current ratings are specified for SIHFR931?
The device is rated for -400 V drain-source voltage and ±20 V gate-source voltage. Continuous drain current is -1.8 A at TC=25°C and -1.1 A at TC=100°C with VGS=-10 V.
What package is used for Vishay SIHFR931?
SIHFR931 uses a surface-mount DPAK (TO-252), TO-252AA package. The extracted package dimensions list body D as 5.97-6.22 mm and E as 6.35-6.73 mm.
What are the key switching-related values for SIHFR931?
At VDD=-200 V, ID=-1.1 A, Rg=21 Ω, and RD=180 Ω, the datasheet specifies 11 ns turn-on delay, 25 ns rise time, 100 ns turn-off delay, and 24 ns fall time as typical values.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.