Specifications
| Type | Description |
|---|---|
| Part Number | SIHLI530 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Component Type | Other |
| Package / Case | TO-220 FULLPAK, isolated 3-lead package; option 1 dimensions include A=4.60-4.80 mm, D=15.80-15.97 mm, E=10.00-10.30 mm, e=2.54 mm BSC; option 2 dimensions include A=4.570-4.830 mm, E=10.360-10.630 mm, e=2.54 mm BSC |
| Part Marking / Datasheet Part Number | IRLI530G; shown as datasheet device name |
| MOSFET Channel | N-channel; single MOSFET configuration |
| Configuration | Single; product summary |
| Drain-Source Voltage | 100 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±10 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | 9.7 A; VGS=5.0 V, TC=25°C |
| Continuous Drain Current | 6.9 A; VGS=5.0 V, TC=100°C |
| Pulsed Drain Current | 39 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear Derating Factor | 0.28 W/°C; absolute maximum ratings |
| Single Pulse Avalanche Energy | 250 mJ; VDD=25 V, starting TJ=25°C, L=4.0 mH, RG=25 Ω, IAS=9.7 A |
| Repetitive Avalanche Current | 9.7 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 4.2 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 42 W; TC=25°C |
| Peak Diode Recovery dV/dt | 5.5 V/ns; ISD≤15 A, dI/dt≤140 A/μs, VDD≤VDS, TJ≤175°C |
| Operating Junction Temperature Range | -55 to +175 °C; absolute maximum ratings |
| Storage Temperature Range | -55 to +175 °C; absolute maximum ratings |
| Soldering Peak Temperature | 300 °C; for 10 s, 1.6 mm from case |
| Mounting Torque | 0.6 Nm; M3 screw |
| Junction-to-Ambient Thermal Resistance | 65 °C/W max; maximum junction-to-ambient |
| Junction-to-Case Thermal Resistance | 3.6 °C/W max; maximum junction-to-case, drain |
| Drain-Source Breakdown Voltage | 100 V min; VGS=0 V, ID=250 μA |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.14 V/°C typ; reference to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 1.0 V min, 2.0 V max; VDS=VGS, ID=250 μA |
| Gate-Source Leakage | ±100 nA max; VGS=±10 V |
| Zero Gate Voltage Drain Current | 25 μA max; VDS=100 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 250 μA max; VDS=80 V, VGS=0 V, TJ=150°C |
| Drain-Source On-State Resistance | 0.16 Ω max; VGS=5.0 V, ID=5.8 A, pulse width≤300 μs, duty cycle≤2% |
| Drain-Source On-State Resistance | 0.22 Ω max; VGS=4.0 V, ID=4.9 A, pulse width≤300 μs, duty cycle≤2% |
| Forward Transconductance | 6.1 S min; VDS=25 V, ID=5.8 A, pulse width≤300 μs, duty cycle≤2% |
| Input Capacitance | 930 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 250 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 57 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Drain to Sink Capacitance | 12 pF typ; f=1 MHz |
| Total Gate Charge | 28 nC max; ID=15 A, VDS=80 V, VGS=5.0 V |
| Gate-Source Charge | 3.8 nC max; ID=15 A, VDS=80 V, VGS=5.0 V |
| Gate-Drain Charge | 14 nC max; ID=15 A, VDS=80 V, VGS=5.0 V |
| Turn-On Delay Time | 4.7 ns typ; VDD=50 V, ID=15 A, RG=6.0 Ω, RD=3.2 Ω |
| Rise Time | 100 ns typ; VDD=50 V, ID=15 A, RG=6.0 Ω, RD=3.2 Ω |
| Turn-Off Delay Time | 22 ns typ; VDD=50 V, ID=15 A, RG=6.0 Ω, RD=3.2 Ω |
| Fall Time | 48 ns typ; VDD=50 V, ID=15 A, RG=6.0 Ω, RD=3.2 Ω |
| Internal Drain Inductance | 4.5 nH typ; between lead, 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead, 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | 9.7 A max; integral reverse p-n junction diode |
| Pulsed Diode Forward Current | 39 A max; repetitive rating, pulse width limited by maximum junction temperature |
| Body Diode Voltage | 2.5 V max; TJ=25°C, IS=9.7 A, VGS=0 V, pulse width≤300 μs, duty cycle≤2% |
| Body Diode Reverse Recovery Time | 100 ns typ, 200 ns max; TJ=25°C, IF=15 A, dI/dt=100 A/μs |
| Body Diode Reverse Recovery Charge | 0.70 μC typ, 1.4 μC max; TJ=25°C, IF=15 A, dI/dt=100 A/μs |
| Forward Turn-On Time | Intrinsic turn-on time negligible; turn-on dominated by source and drain inductance |
| High Voltage Isolation | 2.5 kV RMS; t=60 s, f=60 Hz |
| Sink to Lead Creepage Distance | 4.8 mm; TO-220 FULLPAK isolated package |
| Ordering Part Number | IRLI530GPbF; lead (Pb)-free ordering information |
| Datasheet Status | request_only |
Product Overview
SIHLI530 is listed by Vishay in the Power_Management category as an N-channel power MOSFET. The datasheet device name is IRLI530G, with single-MOSFET configuration and lead-free ordering part number IRLI530GPbF. Electrical limits include 100 V drain-source voltage, ±10 V gate-source voltage, and continuous drain current ratings of 9.7 A at TC=25°C and 6.9 A at TC=100°C when driven at VGS=5.0 V.
The package is an isolated 3-lead TO-220 FULLPAK with 2.5 kV RMS high-voltage isolation for 60 s at 60 Hz and 4.8 mm sink-to-lead creepage distance. Package dimensions include 2.54 mm BSC lead pitch, with option-specific body dimensions documented for A, D, and E.
For design review, the part specifies 0.16 Ω maximum drain-source on-state resistance at VGS=5.0 V and 0.22 Ω maximum at VGS=4.0 V under pulsed test conditions. Additional grounded parameters include 28 nC maximum total gate charge, 930 pF typical input capacitance, 3.6°C/W maximum junction-to-case thermal resistance, avalanche energy ratings, and body-diode recovery specifications. These facts support use in power switching circuits where voltage rating, isolated mounting, thermal limits, gate drive, and diode behavior must be checked.
Key Features
- N-channel single power MOSFET configuration
- 100 V drain-source voltage rating
- 9.7 A continuous drain current at TC=25°C
- 39 A pulsed drain current repetitive rating
- 0.16 Ω maximum on-resistance at VGS=5.0 V
- 28 nC maximum total gate charge
- 2.5 kV RMS high-voltage package isolation
- TO-220 FULLPAK isolated 3-lead package
- 3.6°C/W maximum junction-to-case thermal resistance
- -55 to +175°C junction temperature range
Typical Applications
- Power switching circuits
- Isolated TO-220 mounting designs
- 100 V MOSFET power stages
- 5 V gate-drive switching designs
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Thermally managed power assemblies
Procurement Notes
When requesting a quote for SIHLI530, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of MOSFET is SIHLI530?
SIHLI530 is described from the provided facts as a Vishay N-channel power MOSFET. The datasheet device name is IRLI530G, and the configuration is a single MOSFET.
What package is specified for SIHLI530?
The package is an isolated 3-lead TO-220 FULLPAK. The extracted dimensions include 2.54 mm BSC lead pitch, option-specific A, D, and E dimensions, 2.5 kV RMS isolation, and 4.8 mm sink-to-lead creepage distance.
What are the main current and voltage ratings?
The device has a 100 V drain-source voltage rating and ±10 V gate-source voltage rating. Continuous drain current is 9.7 A at TC=25°C and 6.9 A at TC=100°C with VGS=5.0 V.
What on-resistance values are provided in the datasheet facts?
Drain-source on-state resistance is 0.16 Ω maximum at VGS=5.0 V and ID=5.8 A. It is also specified as 0.22 Ω maximum at VGS=4.0 V and ID=4.9 A under pulsed test conditions.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.