SIHP7N60E N-Channel Power MOSFET

Specifications

Product Overview

SIHP7N60E is specified by Vishay as a single N-channel power MOSFET in a TO-220AB package. The datasheet facts place it in the Power_Management category, with a product-summary drain-source voltage of 650 V at maximum junction temperature and an absolute maximum drain-source voltage of 600 V at TC = 25°C unless otherwise noted.

Key conduction and drive parameters include 7 A continuous drain current at TC = 25°C, 5 A at TC = 100°C, and 18 A pulsed drain current with pulse width limited by maximum junction temperature. The MOSFET has 0.6 ohm maximum drain-source on-state resistance at VGS = 10 V, plus 20 nC typical and 40 nC maximum total gate charge at VDS = 480 V and ID = 3.5 A.

Thermal and assembly limits include 78 W maximum power dissipation, 0.63 W/°C linear derating, 1.6°C/W maximum junction-to-case thermal resistance, and a 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case. These values fit thermally managed high-voltage switching designs using a through-hole power package.

Key Features

• Single N-channel power MOSFET configuration
• TO-220AB through-hole power package
• 600 V absolute maximum drain-source voltage
• 650 V drain-source voltage at maximum junction temperature
• 7 A continuous drain current at TC = 25°C
• 0.6 ohm maximum on-state resistance at VGS = 10 V
• 40 nC maximum total gate charge
• 18 A pulsed drain current rating
• 78 W maximum power dissipation
• -55 to +150°C junction and storage range
• 1.6°C/W maximum junction-to-case thermal resistance
• 300°C peak soldering temperature for 10 seconds

Typical Applications

• High-voltage power switching
• Gate-driven power conversion
• Through-hole power assemblies
• Thermally managed switching stages
• Body-diode conduction paths
• Avalanche-rated switching circuits
• Power_Management converter stages

Procurement Notes

When requesting a quote for SIHP7N60E, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.