Specifications
| Type | Description |
|---|---|
| Part Number | SUM110P0 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263 (D2PAK), 3-lead; Version 1 dimensions: D=8.636-9.652 mm, E=9.652-10.414 mm, L=14.605-15.875 mm; e=2.54 mm BSC |
| Drain-Source Voltage | -40 V; Absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; Absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | -110 A; TJ=175°C, TC=25°C, package limited |
| Continuous Drain Current | -110 A; TJ=175°C, TC=125°C, package limited |
| Pulsed Drain Current | -240 A; Absolute maximum rating |
| Avalanche Current | -75 A; L=0.1 mH |
| Single Pulse Avalanche Energy | 281 mJ; L=0.1 mH, duty cycle <=1% |
| Power Dissipation | 375 W; TC=25°C; see SOA curve for voltage derating |
| Power Dissipation | 3.75 W; TA=25°C, mounted on 1 inch square FR-4 PCB |
| Operating Junction Temperature Range | -55 to 175 °C; Absolute maximum rating |
| Storage Temperature Range | -55 to 175 °C; Absolute maximum rating |
| Junction-to-Ambient Thermal Resistance | 40 °C/W; PCB mount, mounted on 1 inch square FR-4 PCB |
| Junction-to-Case Thermal Resistance | 0.4 °C/W; Thermal resistance rating |
| Drain-Source Breakdown Voltage | min -40 V; VGS=0 V, ID=-250 µA, TJ=25°C |
| Gate Threshold Voltage | min -1 V, max -3 V; VDS=VGS, ID=-250 µA, TJ=25°C |
| Gate-Body Leakage | max ±100 nA; VDS=0 V, VGS=±20 V, TJ=25°C |
| Zero Gate Voltage Drain Current | max -1 µA; VDS=-40 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | max -50 µA; VDS=-40 V, VGS=0 V, TJ=125°C |
| Zero Gate Voltage Drain Current | max -250 µA; VDS=-40 V, VGS=0 V, TJ=175°C |
| On-State Drain Current | min -120 A; VDS=-5 V, VGS=-10 V, pulse test |
| Drain-Source On-State Resistance | typ 0.0034 Ω, max 0.0042 Ω; VGS=-10 V, ID=-30 A, TJ=25°C, pulse test |
| Drain-Source On-State Resistance | max 0.0063 Ω; VGS=-10 V, ID=-30 A, TJ=125°C, pulse test |
| Drain-Source On-State Resistance | max 0.0076 Ω; VGS=-10 V, ID=-30 A, TJ=175°C, pulse test |
| Drain-Source On-State Resistance | typ 0.005 Ω, max 0.0062 Ω; VGS=-4.5 V, ID=-20 A, TJ=25°C, pulse test |
| Forward Transconductance | typ 20 S; VDS=-15 V, ID=-30 A, pulse test |
| Input Capacitance | typ 11200 pF; VGS=0 V, VDS=-25 V, f=1 MHz |
| Output Capacitance | typ 1650 pF; VGS=0 V, VDS=-25 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 1200 pF; VGS=0 V, VDS=-25 V, f=1 MHz |
| Total Gate Charge | typ 235 nC, max 350 nC; VDS=-20 V, VGS=-10 V, ID=-110 A |
| Gate-Source Charge | typ 45 nC; VDS=-20 V, VGS=-10 V, ID=-110 A |
| Gate-Drain Charge | typ 65 nC; VDS=-20 V, VGS=-10 V, ID=-110 A |
| Gate Resistance | typ 3 Ω; TJ=25°C |
| Turn-On Delay Time | typ 25 ns, max 40 ns; VDD=-20 V, RL=0.18 Ω, ID≈-110 A, VGEN=-10 V, Rg=2.5 Ω |
| Rise Time | typ 30 ns, max 45 ns; VDD=-20 V, RL=0.18 Ω, ID≈-110 A, VGEN=-10 V, Rg=2.5 Ω |
| Turn-Off Delay Time | typ 190 ns, max 300 ns; VDD=-20 V, RL=0.18 Ω, ID≈-110 A, VGEN=-10 V, Rg=2.5 Ω |
| Fall Time | typ 110 ns, max 165 ns; VDD=-20 V, RL=0.18 Ω, ID≈-110 A, VGEN=-10 V, Rg=2.5 Ω |
| Source-Drain Diode Continuous Current | -110 A; TC=25°C |
| Source-Drain Diode Pulsed Current | -240 A; TC=25°C |
| Source-Drain Diode Forward Voltage | typ -1 V, max -1.5 V; IF=-85 A, VGS=0 V, pulse test |
| Reverse Recovery Time | typ 65 ns, max 100 ns; IF=-85 A, dI/dt=100 A/µs |
| Peak Reverse Recovery Current | typ -3.7 A, max -5.6 A; IF=-85 A, dI/dt=100 A/µs |
| Reverse Recovery Charge | typ 0.12 µC, max 0.28 µC; IF=-85 A, dI/dt=100 A/µs |
| Lead-Free Ordering Part Number | SUM110P04-04L-E3; Ordering information |
| Technology | TrenchFET Power MOSFET; Feature list |
| Datasheet Status | request_only |
Product Overview
SUM110P0 is a Texas Instruments P-channel power MOSFET categorized under Power_Management. The extracted datasheet facts identify it as a TrenchFET Power MOSFET with a -40 V drain-source rating and ±20 V gate-source rating. Its continuous drain current is specified at -110 A for both TC=25°C and TC=125°C with package limitation, while pulsed drain current is rated at -240 A.
The device is packaged in a TO-263 (D2PAK), 3-lead case. Version 1 package dimensions are D=8.636-9.652 mm, E=9.652-10.414 mm, L=14.605-15.875 mm, with e=2.54 mm BSC. Thermal ratings include 0.4°C/W junction-to-case resistance and 40°C/W junction-to-ambient resistance on a 1 inch square FR-4 PCB.
For power switching use, the MOSFET provides 0.0034 Ω typical and 0.0042 Ω maximum drain-source on-state resistance at VGS=-10 V, ID=-30 A, and TJ=25°C. The datasheet also lists gate charge, capacitance, switching time, avalanche, and source-drain diode recovery parameters for circuit design.
Key Features
- P-channel power MOSFET for Power_Management circuits
- TrenchFET Power MOSFET technology listed in features
- -40 V drain-source absolute maximum rating
- ±20 V gate-source absolute maximum rating
- -110 A continuous drain current, package limited
- -240 A pulsed drain current absolute maximum
- 0.0042 Ω maximum RDS(on) at -10 V gate drive
- 235 nC typical total gate charge at -110 A
- 281 mJ single pulse avalanche energy rating
- TO-263 (D2PAK), 3-lead package case
Typical Applications
- Power management switching stages
- High-current P-channel load switching
- -40 V rail control circuits
- Low RDS(on) power paths
- Avalanche-rated switching circuits
- TO-263 surface-mount power assemblies
- Source-drain diode recovery designs
Procurement Notes
When requesting a quote for SUM110P0, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM110P0?
SUM110P0 is identified in the extracted datasheet facts as a Texas Instruments P-channel power MOSFET in the Power_Management category. The feature list specifies TrenchFET Power MOSFET technology.
What package is used for SUM110P0?
The package case is TO-263 (D2PAK), 3-lead. Version 1 dimensions are D=8.636-9.652 mm, E=9.652-10.414 mm, L=14.605-15.875 mm, with e=2.54 mm BSC.
What are the main voltage and current ratings?
The extracted absolute maximum ratings list -40 V drain-source voltage, ±20 V gate-source voltage, -110 A continuous drain current under package-limited conditions, and -240 A pulsed drain current.
What is the specified on-state resistance?
At VGS=-10 V, ID=-30 A, and TJ=25°C, drain-source on-state resistance is 0.0034 Ω typical and 0.0042 Ω maximum. Higher-temperature maximum values are 0.0063 Ω at 125°C and 0.0076 Ω at 175°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.