Specifications
| Type | Description |
|---|---|
| Part Number | SUM120N04-1M7L |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263 (D2PAK), 3-lead; body D 8.636-9.652 mm, E 9.652-10.414 mm, L 14.605-15.875 mm, pitch e 2.54 mm BSC |
| Device Polarity | N-channel; condition: MOSFET type |
| Drain-Source Voltage | 40 V; condition: Product summary / absolute maximum rating, VDS |
| Drain-Source On-State Resistance | 0.0017 ohm max; condition: VGS=10 V |
| Drain-Source On-State Resistance | 0.0020 ohm max; condition: VGS=4.5 V |
| Continuous Drain Current | 120 A; condition: TC=25°C, TJ=150°C, package limited |
| Continuous Drain Current | 120 A; condition: TC=70°C, TJ=150°C, package limited |
| Typical Total Gate Charge | 190 nC; condition: Product summary, Qg typ |
| Gate-Source Voltage | +/-20 V; condition: Absolute maximum rating, VGS |
| Pulsed Drain Current | 480 A; condition: t=100 us, absolute maximum rating, IDM |
| Avalanche Current | 92 A; condition: Absolute maximum rating, IAS |
| Single Avalanche Energy | 423 mJ; condition: L=0.1 mH, EAS |
| Maximum Power Dissipation | 375 W; condition: TC=25°C, duty cycle <=1%, voltage derating per SOA |
| Maximum Power Dissipation | 125 W; condition: TC=25°C, PCB mount condition, voltage derating per SOA |
| Operating Junction Temperature Range | -55 to +175 °C; condition: TJ |
| Storage Temperature Range | -55 to +175 °C; condition: Tstg |
| Junction-to-Ambient Thermal Resistance | 40 °C/W; condition: PCB mount, 1 inch square FR-4 |
| Junction-to-Case Thermal Resistance | 0.4 °C/W; condition: Drain case, RthJC |
| Drain-Source Breakdown Voltage | 40 V min; condition: VGS=0 V, ID=250 uA |
| Gate Threshold Voltage | 1.5 V min, 2.5 V max; condition: VDS=VGS, ID=250 uA |
| Gate-Body Leakage | +/-250 nA max; condition: VDS=0 V, VGS=+/-20 V |
| Zero Gate Voltage Drain Current | 1 uA max; condition: VDS=40 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 150 uA max; condition: VDS=40 V, VGS=0 V, TJ=125°C |
| Zero Gate Voltage Drain Current | 5 mA max; condition: VDS=40 V, VGS=0 V, TJ=175°C |
| On-State Drain Current | 120 A min; condition: VDS>=10 V, VGS=10 V, pulse test |
| Drain-Source On-State Resistance | 0.0014 ohm typ, 0.0017 ohm max; condition: VGS=10 V, ID=30 A, pulse test |
| Drain-Source On-State Resistance | 0.0015 ohm typ, 0.0020 ohm max; condition: VGS=4.5 V, ID=20 A, pulse test |
| Forward Transconductance | 212 S typ; condition: VDS=15 V, ID=20 A, pulse test |
| Input Capacitance | 11685 pF typ; condition: VGS=0 V, VDS=20 V, f=1 MHz |
| Output Capacitance | 1652 pF typ; condition: VGS=0 V, VDS=20 V, f=1 MHz |
| Reverse Transfer Capacitance | 733 pF typ; condition: VGS=0 V, VDS=20 V, f=1 MHz |
| Total Gate Charge | 190 nC typ, 285 nC max; condition: VDS=20 V, VGS=10 V, ID=20 A |
| Gate-Source Charge | 29 nC typ; condition: VDS=20 V, VGS=10 V, ID=20 A |
| Gate-Drain Charge | 27 nC typ; condition: VDS=20 V, VGS=10 V, ID=20 A |
| Gate Resistance | 0.2 ohm min, 1.07 ohm typ, 2.14 ohm max; condition: f=1 MHz |
| Turn-On Delay Time | 15 ns typ, 23 ns max; condition: ID=10 A, VDD=20 V, VGEN=10 V, RL=2 ohm, Rg=1 ohm |
| Rise Time | 74 ns typ, 110 ns max; condition: ID=10 A, VDD=20 V, VGEN=10 V, RL=2 ohm, Rg=1 ohm |
| Turn-Off Delay Time | 101 ns typ, 210 ns max; condition: ID=10 A, VDD=20 V, VGEN=10 V, RL=2 ohm, Rg=1 ohm |
| Fall Time | 12 ns typ, 20 ns max; condition: ID=10 A, VDD=20 V, VGEN=10 V, RL=2 ohm, Rg=1 ohm |
| Body Diode Pulsed Current | 480 A max; condition: ISM, TC=25°C |
| Body Diode Forward Voltage | 0.8 V typ, 1.5 V max; condition: IF=10 A, VGS=0 V, pulse test |
| Package Dimension A | 4.064-4.826 mm; condition: TO-263 3-lead package |
| Package Dimension b | 0.508-0.990 mm; condition: TO-263 3-lead package |
| Package Dimension b1 | 0.508-0.889 mm; condition: TO-263 3-lead package |
| Package Dimension b2 | 1.143-1.397 mm; condition: TO-263 3-lead package |
| Package Dimension c Thick Lead | 0.584-0.711 mm; condition: SUM package uses thick lead |
| Package Dimension c1 Thick Lead | 0.584-0.685 mm; condition: SUM package uses thick lead |
| Package Dimension c2 | 1.143-1.397 mm; condition: TO-263 3-lead package |
| Package Dimension D | 8.636-9.652 mm; condition: TO-263 3-lead package |
| Package Dimension D1 | 5.588-6.096 mm; condition: TO-263 3-lead package |
| Package Dimension E | 9.652-10.414 mm; condition: TO-263 3-lead package |
| Lead Pitch | 2.54 mm BSC; condition: Package dimension e |
| Package Dimension L | 14.605-15.875 mm; condition: TO-263 3-lead package |
| Ordering Part Number | SUM120N04-1m7L-GE3; condition: Lead (Pb)-free and halogen-free ordering information |
| Recommended Applications | Power supply secondary synchronous rectification; DC/DC converter; power tools; motor drive switch |
| Datasheet Status | request_only |
Product Overview
SUM120N04-1M7L is a Vishay N-channel power MOSFET specified for 40 V drain-source operation. Its on-state resistance is rated at 0.0014 ohm typical and 0.0017 ohm maximum at VGS=10 V and ID=30 A, with a 0.0015 ohm typical and 0.0020 ohm maximum rating at VGS=4.5 V and ID=20 A.
The device is rated for 120 A continuous drain current at TC=25°C and TC=70°C, with TJ=150°C and package-limited conditions. Pulsed drain current is specified at 480 A for 100 us, avalanche current at 92 A, and single avalanche energy at 423 mJ with L=0.1 mH.
The TO-263 (D2PAK), 3-lead package has a 2.54 mm BSC lead pitch, D dimension of 8.636-9.652 mm, E dimension of 9.652-10.414 mm, and L dimension of 14.605-15.875 mm. The operating and storage temperature ranges are both -55 to +175°C. Listed applications are power supply secondary synchronous rectification, DC/DC converters, power tools, and motor drive switching.
Key Features
- N-channel MOSFET structure for power switching
- 40 V drain-source voltage rating
- 0.0017 ohm maximum RDS(on) at VGS=10 V
- 0.0020 ohm maximum RDS(on) at VGS=4.5 V
- 120 A continuous drain current at TC=25°C
- 480 A pulsed drain current for 100 us
- 190 nC typical total gate charge
- TO-263 D2PAK 3-lead package
- 0.4 °C/W junction-to-case thermal resistance
- -55 to +175°C junction temperature range
Typical Applications
- Power supply secondary synchronous rectification
- DC/DC converter
- Power tools
- Motor drive switch
Procurement Notes
When requesting a quote for SUM120N04-1M7L, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM120N04-1M7L?
SUM120N04-1M7L is a Vishay N-channel power MOSFET in the Power_Management category. The extracted datasheet facts specify 40 V drain-source voltage and TO-263 (D2PAK), 3-lead packaging.
What is the on-state resistance of SUM120N04-1M7L?
The drain-source on-state resistance is specified as 0.0014 ohm typical and 0.0017 ohm maximum at VGS=10 V, ID=30 A. At VGS=4.5 V and ID=20 A, it is 0.0015 ohm typical and 0.0020 ohm maximum.
What current ratings are listed for this MOSFET?
The continuous drain current is 120 A at TC=25°C and also 120 A at TC=70°C, with TJ=150°C and package-limited conditions. Pulsed drain current is specified as 480 A for a 100 us pulse.
Which applications are specified for SUM120N04-1M7L?
The datasheet facts list power supply secondary synchronous rectification, DC/DC converter use, power tools, and motor drive switching as recommended applications for SUM120N04-1M7L.
What package dimensions are provided for SUM120N04-1M7L?
The TO-263 3-lead package includes D of 8.636-9.652 mm, E of 9.652-10.414 mm, L of 14.605-15.875 mm, and 2.54 mm BSC lead pitch. Additional A, b, b1, b2, c, c1, c2, and D1 dimensions are specified.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.