Specifications
| Type | Description |
|---|---|
| Part Number | SUM25P10-138 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263 (D2PAK), 3-lead; body D 8.636-9.652 mm, E 9.652-10.414 mm, A 4.064-4.826 mm |
| Component Type | Power_IC |
| Drain-Source Voltage | -100 V; absolute maximum, TC=25°C |
| Gate-Source Voltage | ±20 V; absolute maximum, TC=25°C |
| Continuous Drain Current | -16.7 A; TJ=150°C, TC=25°C |
| Continuous Drain Current | -9.6 A; TJ=150°C, TC=125°C |
| Pulsed Drain Current | -40 A; t=100 µs |
| Avalanche Current | -25 A; L=0.1 mH |
| Single Pulse Avalanche Energy | 31.25 mJ; L=0.1 mH, duty cycle <=1% |
| Power Dissipation | 88.2 W; TC=25°C |
| Power Dissipation | 3.75 W; TA=25°C |
| Operating Junction and Storage Temperature Range | -55 to 175 °C; absolute maximum rating |
| Junction-to-Ambient Thermal Resistance | 40 °C/W; free air |
| Junction-to-Case Thermal Resistance | 1.7 °C/W; thermal resistance rating |
| Drain-Source Breakdown Voltage | min -100 V; VGS=0 V, ID=-250 µA, TJ=25°C |
| Gate-Threshold Voltage | min -2 V, max -4 V; VDS=VGS, ID=-250 µA, TJ=25°C |
| VDS Temperature Coefficient | -105 mV/°C; ID=-250 µA |
| VGS(th) Temperature Coefficient | 6.6 mV/°C; ID=-250 µA |
| Gate-Body Leakage | max ±100 nA; VDS=0 V, VGS=±20 V |
| Zero Gate Voltage Drain Current | max -1 µA; VDS=-100 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | max -50 µA; VDS=-100 V, VGS=0 V, TJ=125°C |
| Zero Gate Voltage Drain Current | max -200 µA; VDS=-100 V, VGS=0 V, TJ=150°C |
| On-State Drain Current | min -20 A; VDS=-5 V, VGS=-10 V, pulse test |
| Drain-Source On-State Resistance | typ 0.115 Ω, max 0.138 Ω; VGS=-10 V, ID=-6 A, pulse test |
| Drain-Source On-State Resistance | typ 0.117 Ω, max 0.141 Ω; VGS=-7.5 V, ID=-6 A, pulse test |
| Drain-Source On-State Resistance | typ 0.118 Ω, max 0.142 Ω; VGS=-6 V, ID=-6 A, pulse test |
| Forward Transconductance | typ 18 S; VDS=-15 V, ID=-6 A, pulse test |
| Input Capacitance | typ 2110 pF; VGS=0 V, VDS=-50 V, f=1 MHz |
| Output Capacitance | typ 105 pF; VGS=0 V, VDS=-50 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 58 pF; VGS=0 V, VDS=-50 V, f=1 MHz |
| Total Gate Charge | typ 40 nC, max 60 nC; VDS=-50 V, VGS=-10 V, ID=-6.7 A |
| Total Gate Charge | typ 24 nC, max 36 nC; VDS=-50 V, VGS=-6 V, ID=-6.7 A |
| Gate-Source Charge | typ 12.5 nC; VDS=-50 V, VGS=-6 V, ID=-6.7 A |
| Gate-Drain Charge | typ 6.7 nC; VDS=-50 V, VGS=-6 V, ID=-6.7 A |
| Gate Resistance | min 2 Ω, typ 8 Ω, max 16 Ω; f=1 MHz |
| Turn-On Delay Time | typ 7 ns, max 14 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-10 V, Rg=1 Ω |
| Rise Time | typ 12 ns, max 20 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-10 V, Rg=1 Ω |
| Turn-Off Delay Time | typ 46 ns, max 70 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-10 V, Rg=1 Ω |
| Fall Time | typ 40 ns, max 60 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-10 V, Rg=1 Ω |
| Turn-On Delay Time | typ 12 ns, max 20 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-4.5 V, Rg=1 Ω |
| Rise Time | typ 105 ns, max 160 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-4.5 V, Rg=1 Ω |
| Turn-Off Delay Time | typ 36 ns, max 54 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-4.5 V, Rg=1 Ω |
| Fall Time | typ 34 ns, max 51 ns; VDD=-50 V, RL=10 Ω, ID≈-5 A, VGEN=-4.5 V, Rg=1 Ω |
| Source-Drain Diode Continuous Current | -16.3 A; TC=25°C |
| Source-Drain Diode Pulsed Current | -40 A; t=100 µs |
| Source-Drain Diode Forward Voltage | typ -0.85 V, max -1.5 V; IF=-5 A, VGS=0 V, pulse test |
| Reverse Recovery Time | typ 70 ns, max 105 ns; IF=-5 A, dI/dt=100 A/µs |
| Peak Reverse Recovery Current | typ -7 A, max -14 A; IF=-5 A, dI/dt=100 A/µs |
| Reverse Recovery Charge | typ 220 nC, max 330 nC; IF=-5 A, dI/dt=100 A/µs |
| Package Lead Pitch | 2.54 mm BSC; TO-263 (D2PAK), 3-lead |
| Recommended Pad Dimension | 0.420 in (10.668 mm); D2PAK 3-lead recommended minimum pads |
| Recommended Pad Dimension | 0.145 in (3.683 mm); D2PAK 3-lead recommended minimum pads |
| Recommended Pad Dimension | 0.135 in (3.429 mm); D2PAK 3-lead recommended minimum pads |
| Datasheet Status | request_only |
Product Overview
SUM25P10-138 is a Vishay P-channel power MOSFET for Power_Management circuits. Its absolute maximum ratings include -100 V drain-source voltage, ±20 V gate-source voltage, -16.7 A continuous drain current at TC=25°C, and -40 A pulsed drain current for 100 µs operation. The operating junction and storage temperature range is -55 to 175°C.
The device is specified with low-ohmic P-channel switching behavior across multiple gate-drive conditions. Drain-source on-state resistance is listed as 0.115 Ω typical and 0.138 Ω maximum at VGS=-10 V and ID=-6 A, with additional maximum values of 0.141 Ω at -7.5 V gate drive and 0.142 Ω at -6 V gate drive. Gate charge data includes 40 nC typical at VGS=-10 V and 24 nC typical at VGS=-6 V.
SUM25P10-138 uses a TO-263 (D2PAK), 3-lead package with 2.54 mm BSC lead pitch. Package body dimensions include D 8.636-9.652 mm, E 9.652-10.414 mm, and A 4.064-4.826 mm. Thermal data includes 1.7°C/W junction-to-case and 40°C/W junction-to-ambient in free air, supporting layout decisions for surface-mount power stages.
Key Features
- P-channel MOSFET with -100 V drain-source rating
- ±20 V absolute maximum gate-source voltage rating
- -16.7 A continuous drain current at TC=25°C
- -40 A pulsed drain current for 100 µs
- 0.138 Ω maximum RDS(on) at -10 V gate drive
- 40 nC typical total gate charge at VGS=-10 V
- TO-263 D2PAK 3-lead surface-mount package
- 1.7°C/W junction-to-case thermal resistance
- -55 to 175°C junction and storage range
- Body diode reverse recovery specified to 105 ns maximum
Typical Applications
- P-channel power switching
- High-side MOSFET switching
- Surface-mount power stages
- D2PAK power layouts
- Avalanche-rated switching circuits
- Body-diode recovery designs
- Gate-driven load control
Procurement Notes
When requesting a quote for SUM25P10-138, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM25P10-138?
SUM25P10-138 is a Vishay P-channel power MOSFET in the Power_Management category. It is supplied in a TO-263 (D2PAK), 3-lead package and has a -100 V drain-source voltage rating.
What is the maximum continuous drain current rating?
The continuous drain current is rated at -16.7 A when TJ=150°C and TC=25°C. At TC=125°C, the continuous drain current rating is -9.6 A under the same junction temperature condition.
What on-resistance is specified for this MOSFET?
The datasheet lists drain-source on-state resistance as 0.115 Ω typical and 0.138 Ω maximum at VGS=-10 V and ID=-6 A using a pulse test condition.
What package and thermal resistance data are provided?
SUM25P10-138 uses a TO-263 (D2PAK), 3-lead package. Thermal resistance is specified as 1.7°C/W junction-to-case and 40°C/W junction-to-ambient in free air.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.