SUM50P10-42 P-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

SUM50P10-42 P-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
SUM50P10-42
Manufacturer
Vishay
Package
TO-263 (D2PAK) 3-lead; Version 1 dimensions: D=8.636-9.652 mm, E=9.652-10.414 mm, L=14.605-15.875 mm; Version 2 dimensions: D=8.60-9.00 mm, E=10.15-10.55 mm, H=15.0-15.6 mm
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

SUM50P10-42 from Vishay is a P-channel power MOSFET in the Power_Management category. It is supplied in a TO-263 (D2PAK) 3-lead package with two listed dimensional versions. Key absolute ratings include -100 V drain-source voltage, ±20 V gate-source voltage, -36 A continuous drain current at TC=25°C, and 125 W maximum power dissipation at TC=25°C. Electrical characteristics include max 0.042 Ω on-resistance at VGS=-10 V and ID=-14 A, and max 0.047 Ω at VGS=-4.5 V and ID=-13 A. Listed applications are load switch and ORing circuits.

Specifications

TypeDescription
Part NumberSUM50P10-42
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-263 (D2PAK) 3-lead; Version 1 dimensions: D=8.636-9.652 mm, E=9.652-10.414 mm, L=14.605-15.875 mm; Version 2 dimensions: D=8.60-9.00 mm, E=10.15-10.55 mm, H=15.0-15.6 mm
Drain-Source Voltage-100 V; absolute maximum rating, TC=25°C unless otherwise noted
Gate-Source Voltage±20 V; absolute maximum rating, TC=25°C unless otherwise noted
Continuous Drain Current-36 A; TJ=150°C, TC=25°C
Continuous Drain Current-30 A; TJ=150°C, TC=70°C
Pulsed Drain Current-40 A; t=300 µs
Avalanche Current-40 A; IAS absolute maximum rating
Single Avalanche Energy80 mJ; L=0.1 mH, duty cycle ≤1%
Maximum Power Dissipation125 W; TC=25°C
Maximum Power Dissipation18.8 W; TA=25°C, mounted on 1 inch square FR-4 PCB
Operating Junction and Storage Temperature Range-55 to 150 °C; TJ, Tstg
Junction-to-Ambient Thermal Resistance40 °C/W; PCB mount, 1 inch square FR-4 material
Junction-to-Case Thermal Resistance1.2 °C/W; junction-to-case drain
Drain-Source Breakdown Voltagemin -100 V; VGS=0 V, ID=-250 µA
Gate Threshold Voltagemin -1 V, max -3 V; VDS=VGS, ID=-250 µA
Gate-Body Leakagemax ±250 nA; VDS=0 V, VGS=±20 V
Zero Gate Voltage Drain Currentmax -1 µA; VDS=-100 V, VGS=0 V
Zero Gate Voltage Drain Currentmax -50 µA; VDS=-100 V, VGS=0 V, TJ=125°C
Zero Gate Voltage Drain Currentmax -250 µA; VDS=-100 V, VGS=0 V, TJ=150°C
On-State Drain Currentmin -40 A; VDS≤-10 V, VGS=-10 V
Drain-Source On-State Resistancetyp 0.035 Ω, max 0.042 Ω; VGS=-10 V, ID=-14 A
Drain-Source On-State Resistancetyp 0.039 Ω, max 0.047 Ω; VGS=-4.5 V, ID=-13 A
Forward Transconductancetyp 55 S; VDS=-20 V, ID=-14 A
Input Capacitancetyp 4600 pF; VGS=0 V, VDS=-50 V, f=1 MHz
Output Capacitancetyp 230 pF; VGS=0 V, VDS=-50 V, f=1 MHz
Reverse Transfer Capacitancetyp 175 pF; VGS=0 V, VDS=-50 V, f=1 MHz
Total Gate Chargetyp 106 nC, max 160 nC; VDS=-50 V, VGS=-10 V, ID=-14 A
Total Gate Chargetyp 54 nC, max 81 nC; VDS=-50 V, VGS=-4.5 V, ID=-14 A
Gate-Source Chargetyp 14 nC; VDS=-50 V, VGS=-4.5 V, ID=-14 A
Gate-Drain Chargetyp 26 nC; VDS=-50 V, VGS=-4.5 V, ID=-14 A
Gate Resistancemin 0.9 Ω, typ 4.6 Ω, max 9.2 Ω; f=1 MHz
Turn-On Delay Timetyp 15 ns, max 25 ns; VDD=-50 V, RL=5 Ω, ID=-10 A, VGEN=-10 V, Rg=1 Ω
Rise Timetyp 20 ns, max 30 ns; VDD=-50 V, RL=5 Ω, ID=-10 A, VGEN=-10 V, Rg=1 Ω
Turn-Off Delay Timetyp 110 ns, max 165 ns; VDD=-50 V, RL=5 Ω, ID=-10 A, VGEN=-10 V, Rg=1 Ω
Fall Timetyp 100 ns, max 150 ns; VDD=-50 V, RL=5 Ω, ID=-10 A, VGEN=-10 V, Rg=1 Ω
Turn-On Delay Timetyp 42 ns, max 65 ns; VDD=-50 V, RL=10 Ω, ID=-10 A, VGEN=-4.5 V, Rg=1 Ω
Rise Timetyp 160 ns, max 240 ns; VDD=-50 V, RL=10 Ω, ID=-10 A, VGEN=-4.5 V, Rg=1 Ω
Turn-Off Delay Timetyp 100 ns, max 150 ns; VDD=-50 V, RL=10 Ω, ID=-10 A, VGEN=-4.5 V, Rg=1 Ω
Fall Timetyp 100 ns, max 150 ns; VDD=-50 V, RL=10 Ω, ID=-10 A, VGEN=-4.5 V, Rg=1 Ω
Body Diode Continuous Current-36 A; TC=25°C
Body Diode Pulsed Current-40 A; TC=25°C
Body Diode Forward Voltagetyp -0.8 V, max -1.2 V; IF=-10 A, VGS=0 V
Reverse Recovery Timetyp 60 ns, max 90 ns; IF=-10 A, dI/dt=100 A/µs
Peak Reverse Recovery Currenttyp 2 A, max 3 A; IF=-10 A, dI/dt=100 A/µs
Reverse Recovery Chargetyp 150 nC, max 225 nC; IF=-10 A, dI/dt=100 A/µs
Ordering Part NumberSUM50P10-42-E3; lead (Pb)-free ordering information
ApplicationsLoad switch; ORing
Datasheet Statusrequest_only

Product Overview

SUM50P10-42 is a Vishay P-channel power MOSFET for Power_Management use. The device is specified with a -100 V drain-source absolute maximum rating and a ±20 V gate-source absolute maximum rating at TC=25°C unless otherwise noted. Continuous drain current is rated at -36 A with TJ=150°C and TC=25°C, or -30 A with TJ=150°C and TC=70°C.

Key Features

  • -100 V drain-source voltage rating
  • ±20 V gate-source voltage absolute maximum
  • -36 A continuous drain current at TC=25°C
  • -30 A continuous drain current at TC=70°C
  • -40 A pulsed drain current at 300 µs
  • 125 W power dissipation at TC=25°C
  • Max 0.042 Ω on-resistance at VGS=-10 V
  • Max 0.047 Ω on-resistance at VGS=-4.5 V
  • Typ 4600 pF input capacitance at 1 MHz
  • TO-263 D2PAK 3-lead package

Typical Applications

  • Load switch
  • ORing
  • Power path ORing
  • P-channel load switching
  • -100 V load switching

Procurement Notes

When requesting a quote for SUM50P10-42, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is SUM50P10-42?

SUM50P10-42 is a Vishay P-channel power MOSFET in the Power_Management category. The extracted datasheet facts list it for load switch and ORing applications.

What package is specified for SUM50P10-42?

The package is TO-263 (D2PAK) 3-lead. The extracted package data lists two dimensional versions, including Version 1 and Version 2 ranges for body and lead dimensions.

What are the main voltage and current ratings?

The device is rated for -100 V drain-source voltage and ±20 V gate-source voltage. Continuous drain current is -36 A at TC=25°C and -30 A at TC=70°C, both with TJ=150°C.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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