Specifications
| Type | Description |
|---|---|
| Part Number | SUM70040M |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263-7L / D2PAK 7-lead; case outline approx. D 8.636-9.652 mm, E 9.652-10.414 mm, A 4.064-4.826 mm, lead pitch 1.27 mm BSC |
| Drain-Source Voltage | 100 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | 120 A; TC=25°C, TJ=150°C, package limited |
| Continuous Drain Current | 120 A; TC=70°C, TJ=150°C, package limited |
| Pulsed Drain Current | 480 A; t=100 µs |
| Avalanche Current | 73 A; absolute maximum rating |
| Single Avalanche Energy | 266 mJ; L=0.1 mH |
| Maximum Power Dissipation | 375 W; TC=25°C; see SOA curve for voltage derating |
| Maximum Power Dissipation | 125 W; TC=125°C; see SOA curve for voltage derating |
| Operating Junction and Storage Temperature Range | -55 to +175°C; TJ, Tstg |
| Junction-to-Ambient Thermal Resistance | 40°C/W; PCB mount, mounted on 1 inch square PCB, FR4 material |
| Junction-to-Case Thermal Resistance | 0.4°C/W; drain case |
| Drain-Source Breakdown Voltage | min 100 V; VGS=0 V, ID=250 µA, TJ=25°C |
| Gate Threshold Voltage | min 2.5 V, max 4 V; VDS=VGS, ID=250 µA, TJ=25°C |
| Gate-Body Leakage | max ±250 nA; VDS=0 V, VGS=±20 V, TJ=25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=100 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | max 150 µA; VDS=100 V, VGS=0 V, TJ=125°C |
| Zero Gate Voltage Drain Current | max 5 mA; VDS=100 V, VGS=0 V, TJ=175°C |
| On-State Drain Current | min 120 A; VDS≥10 V, VGS=10 V, pulse test |
| Drain-Source On-State Resistance | typ 0.0030 Ω, max 0.0038 Ω; VGS=10 V, ID=20 A, pulse test |
| Drain-Source On-State Resistance | typ 0.0035 Ω, max 0.0046 Ω; VGS=7.5 V, ID=15 A, pulse test |
| Forward Transconductance | typ 82 S; VDS=15 V, ID=20 A, pulse test |
| Input Capacitance | typ 5100 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Output Capacitance | typ 2025 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 165 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Total Gate Charge | typ 76 nC, max 120 nC; VDS=50 V, VGS=10 V, ID=20 A |
| Gate-Source Charge | typ 23 nC; VDS=50 V, VGS=10 V, ID=20 A |
| Gate-Drain Charge | typ 17 nC; VDS=50 V, VGS=10 V, ID=20 A |
| Gate Resistance | min 0.6 Ω, typ 3.3 Ω, max 6.6 Ω; f=1 MHz |
| Turn-On Delay Time | typ 15 ns, max 30 ns; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Rise Time | typ 22 ns, max 40 ns; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Turn-Off Delay Time | typ 55 ns, max 100 ns; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Fall Time | typ 15 ns, max 30 ns; VDD=50 V, RL=5 Ω, ID≈10 A, VGEN=10 V, Rg=1 Ω |
| Body Diode Pulsed Current | max 480 A; t=100 µs, TC=25°C |
| Body Diode Forward Voltage | typ 0.8 V, max 1.5 V; IF=10 A, VGS=0 V, pulse test |
| Reverse Recovery Time | typ 94 ns, max 150 ns; IF=20 A, di/dt=100 A/µs |
| Peak Reverse Recovery Current | typ 4.6 A, max 10 A; IF=20 A, di/dt=100 A/µs |
| Reverse Recovery Charge | typ 0.23 µC, max 0.5 µC; IF=20 A, di/dt=100 A/µs |
| Package Ordering Code | SUM70040M-GE3; lead (Pb)-free and halogen-free ordering option |
| Datasheet Status | request_only |
Product Overview
SUM70040M is a Vishay N-channel 100 V MOSFET for Power_Management designs requiring high current capability and low on-state resistance. The extracted ratings list 100 V drain-source capability, ±20 V gate-source voltage, 120 A continuous drain current under package-limited case-temperature conditions, and 480 A pulsed drain current for 100 µs.
The MOSFET is supplied in a TO-263-7L / D2PAK 7-lead package with approximate case outline dimensions of D 8.636-9.652 mm, E 9.652-10.414 mm, A 4.064-4.826 mm, and 1.27 mm BSC lead pitch. Thermal data includes 0.4°C/W junction-to-case resistance at the drain case and 40°C/W junction-to-ambient resistance on a 1 inch square FR4 PCB.
Electrical characteristics include maximum RDS(on) of 0.0038 Ω at VGS=10 V and ID=20 A, and 0.0046 Ω at VGS=7.5 V and ID=15 A. Switching data includes 15 ns typical turn-on delay, 22 ns typical rise time, 55 ns typical turn-off delay, and 15 ns typical fall time under the stated 50 V test condition.
Key Features
- 100 V drain-source voltage rating
- ±20 V gate-source voltage absolute maximum
- 120 A continuous drain current, package limited
- 480 A pulsed drain current at 100 µs
- 0.0038 Ω maximum RDS(on) at 10 V gate drive
- 120 nC maximum total gate charge at 50 V
- 0.4°C/W junction-to-case thermal resistance
- -55 to +175°C junction and storage temperature range
- 150 ns maximum body diode reverse recovery time
- TO-263-7L / D2PAK 7-lead package
Typical Applications
- High-current power switching
- DC power control stages
- Synchronous rectification circuits
- MOSFET bridge power stages
- Low-resistance load switching
- Gate-driven power conversion
- Body-diode commutation paths
Procurement Notes
When requesting a quote for SUM70040M, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM70040M?
SUM70040M is an N-channel 100 V MOSFET from Vishay in the Power_Management category. The extracted package information identifies a TO-263-7L / D2PAK 7-lead case.
What drain current rating is specified for SUM70040M?
The extracted ratings list 120 A continuous drain current at TC=25°C and also 120 A at TC=70°C, both with TJ=150°C and package-limited conditions. Pulsed drain current is 480 A for 100 µs.
What is the on-resistance of SUM70040M?
At VGS=10 V and ID=20 A, the drain-source on-state resistance is 0.0030 Ω typical and 0.0038 Ω maximum. At VGS=7.5 V and ID=15 A, it is 0.0035 Ω typical and 0.0046 Ω maximum.
What thermal limits are provided for SUM70040M?
The extracted thermal data gives 0.4°C/W junction-to-case resistance at the drain case and 40°C/W junction-to-ambient resistance when mounted on a 1 inch square FR4 PCB. The junction and storage range is -55 to +175°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.