Specifications
| Type | Description |
|---|---|
| Part Number | SUM90330E |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Component Type | Other |
| Package / Case | TO-263 / D2PAK 3-lead; Version 1 dimensions: A 4.064-4.826 mm, D 8.636-9.652 mm, E 9.652-10.414 mm, L 14.605-15.875 mm; Version 2 dimensions: A 4.36-4.56 mm, D 8.60-9.00 mm, E 10.15-10.55 mm, H 15.0-15.6 mm |
| Drain-Source Voltage | 200 V; Product summary, VDS |
| Drain-Source On-Resistance | 0.0375 ohm max; VGS=10 V |
| Drain-Source On-Resistance | 0.0422 ohm max; VGS=7.5 V |
| Total Gate Charge | 21 nC typ; Product summary, Qg |
| Continuous Drain Current | 35.1 A; Product summary, ID |
| Configuration | Single; N-channel MOSFET |
| Ordering Part Number | SUM90330E-GE3; Lead (Pb)-free and halogen-free ordering option |
| Drain-Source Voltage Absolute Maximum | 200 V; TA=25 °C unless otherwise noted |
| Gate-Source Voltage Absolute Maximum | +/-20 V; TA=25 °C unless otherwise noted |
| Continuous Drain Current | 35.1 A; TC=25 °C |
| Continuous Drain Current | 20.3 A; TC=125 °C |
| Pulsed Drain Current | 70 A; t=100 us |
| Continuous Source-Drain Diode Current | 12.5 A; IS, TA=25 °C unless otherwise noted |
| Single Pulse Avalanche Current | 33 A; L=0.1 mH, duty cycle <=1% |
| Single Pulse Avalanche Energy | 54.45 mJ; L=0.1 mH, duty cycle <=1% |
| Maximum Power Dissipation | 125 W; TC=25 °C; see SOA curve for voltage derating |
| Maximum Power Dissipation | 41.7 W; TC=125 °C; see SOA curve for voltage derating |
| Operating Junction Temperature Range | -55 to +175 °C; TJ |
| Storage Temperature Range | -55 to +175 °C; Tstg |
| Soldering Peak Temperature | 260 °C; Soldering recommendations |
| Maximum Junction-to-Ambient Thermal Resistance | 40 °C/W max; PCB mount, mounted on 1 inch square PCB FR4 material |
| Maximum Junction-to-Case Thermal Resistance | 1.2 °C/W max; Drain, steady state |
| Drain-Source Breakdown Voltage | 200 V min; VGS=0 V, ID=250 uA, TJ=25 °C |
| Gate-Source Threshold Voltage | 2 V min, 4 V max; VDS=VGS, ID=250 uA, TJ=25 °C |
| Gate-Source Leakage | 250 nA max; VDS=0 V, VGS=+/-20 V, TJ=25 °C |
| Zero Gate Voltage Drain Current | 1 uA max; VDS=200 V, VGS=0 V, TJ=25 °C |
| Zero Gate Voltage Drain Current | 150 uA max; VDS=200 V, VGS=0 V, TJ=125 °C |
| Zero Gate Voltage Drain Current | 5 mA max; VDS=200 V, VGS=0 V, TJ=175 °C |
| On-State Drain Current | 20 A min; VDS>=10 V, VGS=10 V, pulse test |
| Drain-Source On-State Resistance | 0.0312 ohm typ, 0.0375 ohm max; VGS=10 V, ID=12.2 A, pulse test |
| Drain-Source On-State Resistance | 0.0337 ohm typ, 0.0422 ohm max; VGS=7.5 V, ID=11.5 A, pulse test |
| Forward Transconductance | 28 S typ; VDS=15 V, ID=10 A, pulse test |
| Input Capacitance | 1172 pF typ; VDS=100 V, VGS=0 V, f=1 MHz |
| Output Capacitance | 150 pF typ; VDS=100 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | 11 pF typ; VDS=100 V, VGS=0 V, f=1 MHz |
| Total Gate Charge | 21 nC typ, 32 nC max; VDS=100 V, VGS=10 V, ID=12.2 A |
| Gate-Source Charge | 6 nC typ; VDS=100 V, VGS=10 V, ID=12.2 A |
| Gate-Drain Charge | 5.3 nC typ; VDS=100 V, VGS=10 V, ID=12.2 A |
| Gate Resistance | 0.76 ohm min, 3.8 ohm typ, 7.6 ohm max; f=1 MHz |
| Turn-On Delay Time | 12 ns typ, 24 ns max; VDD=100 V, RL=14.2 ohm, ID approximately 7 A, VGEN=10 V, Rg=1 ohm |
| Rise Time | 25 ns typ, 50 ns max; VDD=100 V, RL=14.2 ohm, ID approximately 7 A, VGEN=10 V, Rg=1 ohm |
| Turn-Off Delay Time | 30 ns typ, 50 ns max; VDD=100 V, RL=14.2 ohm, ID approximately 7 A, VGEN=10 V, Rg=1 ohm |
| Fall Time | 22 ns typ, 44 ns max; VDD=100 V, RL=14.2 ohm, ID approximately 7 A, VGEN=10 V, Rg=1 ohm |
| Pulse Diode Forward Current | 70 A max; t=100 us |
| Body Diode Voltage | 0.8 V typ, 1.5 V max; IF=7 A, VGS=0 V |
| Body Diode Reverse Recovery Time | 111 ns typ, 170 ns max; IF=7 A, di/dt=100 A/us |
| Body Diode Reverse Recovery Charge | 0.51 uC typ, 1 uC max; IF=7 A, di/dt=100 A/us |
| Reverse Recovery Fall Time | 94 ns typ; IF=7 A, di/dt=100 A/us |
| Reverse Recovery Rise Time | 17 ns typ; IF=7 A, di/dt=100 A/us |
| Body Diode Peak Reverse Recovery Current | 8.5 A typ, 17 A max; IF=7 A, di/dt=100 A/us |
| Pulse Test Condition | Pulse width <=300 us, duty cycle <=2%; Static specifications note |
| Recommended Minimum Pad Dimension | 0.420 in / 10.668 mm; D2PAK 3-lead recommended minimum pads |
| Recommended Minimum Pad Dimension | 0.145 in / 3.683 mm; D2PAK 3-lead recommended minimum pads |
| Recommended Minimum Pad Dimension | 0.135 in / 3.429 mm; D2PAK 3-lead recommended minimum pads |
| Recommended Minimum Pad Dimension | 0.200 in / 5.080 mm; D2PAK 3-lead recommended minimum pads |
| Recommended Minimum Pad Dimension | 0.050 in / 1.257 mm; D2PAK 3-lead recommended minimum pads |
| Datasheet Status | request_only |
Product Overview
SUM90330E is a Vishay single N-channel power MOSFET for Power_Management designs requiring a 200 V drain-source rating. The datasheet lists 35.1 A continuous drain current at TC=25 °C and 20.3 A at TC=125 °C, with 70 A pulsed drain current for 100 us conditions.
Conduction data includes 0.0312 ohm typical and 0.0375 ohm maximum drain-source on-state resistance at VGS=10 V and ID=12.2 A. At VGS=7.5 V and ID=11.5 A, on-resistance is specified as 0.0337 ohm typical and 0.0422 ohm maximum. Gate-related values include 2 V to 4 V threshold voltage, 21 nC typical and 32 nC maximum total gate charge, and +/-20 V absolute maximum gate-source voltage.
The TO-263 / D2PAK 3-lead package includes two dimensional versions and recommended minimum pad dimensions. Thermal ratings include 1.2 °C/W maximum junction-to-case resistance and 40 °C/W maximum junction-to-ambient resistance when mounted on 1 inch square FR4 PCB material.
Key Features
- 200 V drain-source voltage rating
- Single N-channel power MOSFET configuration
- 35.1 A continuous drain current at TC=25 °C
- 20.3 A continuous drain current at TC=125 °C
- 0.0375 ohm maximum on-resistance at VGS=10 V
- 0.0422 ohm maximum on-resistance at VGS=7.5 V
- 21 nC typical total gate charge
- 70 A pulsed drain current for 100 us
- 1.2 °C/W maximum junction-to-case thermal resistance
- -55 to +175 °C operating junction range
Typical Applications
- Power switching stages
- MOSFET load switching
- DC power conversion
- Motor drive switching
- Body diode conduction paths
- Avalanche-rated switching circuits
- D2PAK PCB assemblies
Procurement Notes
When requesting a quote for SUM90330E, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM90330E?
SUM90330E is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify a TO-263 / D2PAK 3-lead package and a 200 V drain-source voltage rating.
What is the on-resistance of SUM90330E?
The datasheet facts list 0.0312 ohm typical and 0.0375 ohm maximum drain-source on-state resistance at VGS=10 V and ID=12.2 A. At VGS=7.5 V and ID=11.5 A, it is 0.0337 ohm typical and 0.0422 ohm maximum.
What package and assembly data are provided?
SUM90330E uses a TO-263 / D2PAK 3-lead package with two dimensional versions listed. Assembly-related facts include a 260 °C soldering peak temperature and recommended minimum D2PAK pad dimensions from 0.050 in / 1.257 mm to 0.420 in / 10.668 mm.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.