Specifications
| Type | Description |
|---|---|
| Part Number | SUM90N10-8M2P |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Component Type | Other |
| Package / Case | TO-263 / D2PAK 3-lead; Version 1 dimensions approx. 8.636-9.652 mm D x 9.652-10.414 mm E x 4.064-4.826 mm A; Version 2 dimensions approx. 8.60-9.00 mm D x 10.15-10.55 mm E x 4.36-4.56 mm A |
| Drain-Source Voltage | 100 V; Absolute maximum, TC=25°C unless otherwise noted |
| Gate-Source Voltage | ±20 V; Absolute maximum, TC=25°C unless otherwise noted |
| Continuous Drain Current | 90 A; TC=25°C, TJ=175°C, package limited |
| Continuous Drain Current | 90 A; TC=70°C, TJ=175°C, package limited |
| Pulsed Drain Current | 240 A; Absolute maximum, duty cycle ≤1% |
| Avalanche Current | 60 A; Absolute maximum |
| Single Avalanche Energy | 180 mJ; L=0.1 mH |
| Maximum Power Dissipation | 300 W; TC=25°C; see SOA curve for voltage derating |
| Maximum Power Dissipation | 3.75 W; TA=25°C; mounted on 1 inch square PCB, FR4 material |
| Operating Junction Temperature Range | -55 to +175 °C; Absolute maximum |
| Storage Temperature Range | -55 to +175 °C; Absolute maximum |
| Junction-to-Ambient Thermal Resistance | 40 °C/W; PCB mount, 1 inch square PCB, FR4 material |
| Junction-to-Case Thermal Resistance | 0.5 °C/W; Drain case reference |
| Drain-Source Breakdown Voltage | min 100 V; VGS=0 V, ID=250 µA |
| Gate Threshold Voltage | min 2.5 V, max 4.5 V; VDS=VGS, ID=250 µA |
| Gate-Body Leakage | max ±250 nA; VDS=0 V, VGS=±20 V |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=100 V, VGS=0 V |
| Zero Gate Voltage Drain Current | max 50 µA; VDS=100 V, VGS=0 V, TJ=125°C |
| Zero Gate Voltage Drain Current | max 250 µA; VDS=100 V, VGS=0 V, TJ=150°C |
| On-State Drain Current | min 70 A; VDS≥10 V, VGS=10 V; pulse test |
| Drain-Source On-State Resistance | typ 0.0067 Ω, max 0.0082 Ω; VGS=10 V, ID=20 A; pulse test |
| Drain-Source On-State Resistance | typ 0.0127 Ω, max 0.0170 Ω; VGS=10 V, ID=20 A, TJ=125°C; pulse test |
| Forward Transconductance | typ 62 S; VDS=15 V, ID=20 A; pulse test |
| Input Capacitance | typ 6290 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Output Capacitance | typ 535 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 182 pF; VGS=0 V, VDS=50 V, f=1 MHz |
| Total Gate Charge | typ 97 nC, max 150 nC; VDS=50 V, VGS=10 V, ID=85 A |
| Gate-Source Charge | typ 32 nC; VDS=50 V, VGS=10 V, ID=85 A |
| Gate-Drain Charge | typ 25 nC; VDS=50 V, VGS=10 V, ID=85 A |
| Gate Resistance | min 0.28 Ω, typ 1.4 Ω, max 2.8 Ω; f=1 MHz |
| Turn-On Delay Time | typ 23 ns, max 35 ns; VDD=50 V, ID≈85 A, VGEN=10 V, RL=0.588 Ω, Rg=1 Ω |
| Rise Time | typ 34 ns, max 52 ns; VDD=50 V, ID≈85 A, VGEN=10 V, RL=0.588 Ω, Rg=1 Ω |
| Turn-Off Delay Time | typ 17 ns, max 26 ns; VDD=50 V, ID≈85 A, VGEN=10 V, RL=0.588 Ω, Rg=1 Ω |
| Fall Time | typ 9 ns, max 18 ns; VDD=50 V, ID≈85 A, VGEN=10 V, RL=0.588 Ω, Rg=1 Ω |
| Source-Drain Diode Continuous Current | max 85 A; TC=25°C |
| Source-Drain Diode Pulsed Current | max 240 A; TC=25°C |
| Source-Drain Diode Forward Voltage | typ 0.85 V, max 1.5 V; IF=30 A, VGS=0 V; pulse test |
| Reverse Recovery Time | typ 61 ns, max 100 ns; IF=75 A, di/dt=100 A/µs |
| Peak Reverse Recovery Current | typ 3 A, max 4.5 A; IF=75 A, di/dt=100 A/µs |
| Reverse Recovery Charge | typ 91 nC, max 130 nC; IF=75 A, di/dt=100 A/µs |
| Configuration | Single N-channel MOSFET; Product summary |
| Package | TO-263; Ordering information |
| Lead-Free Ordering Part Number | SUM90N10-8m2P-E3; Ordering information |
| Datasheet Status | request_only |
Product Overview
The Vishay SUM90N10-8M2P is identified in the datasheet as a single N-channel power MOSFET for Power_Management use. Its absolute maximum ratings include 100 V drain-source voltage, ±20 V gate-source voltage, 90 A continuous drain current under specified case-temperature conditions, and 240 A pulsed drain current at duty cycle ≤1%.
The device is offered in a TO-263 / D2PAK 3-lead package. The extracted package data lists two dimensional versions: Version 1 at approximately 8.636-9.652 mm D, 9.652-10.414 mm E, and 4.064-4.826 mm A; and Version 2 at approximately 8.60-9.00 mm D, 10.15-10.55 mm E, and 4.36-4.56 mm A.
For conduction and switching review, the datasheet specifies drain-source on-state resistance of typ 0.0067 Ω and max 0.0082 Ω at VGS=10 V and ID=20 A, total gate charge of typ 97 nC and max 150 nC, and switching times measured at VDD=50 V and ID≈85 A. Thermal limits include 0.5°C/W junction-to-case resistance and 40°C/W junction-to-ambient resistance on a 1 inch square FR4 PCB.
Key Features
- 100 V drain-source absolute maximum rating
- ±20 V gate-source absolute maximum rating
- 90 A continuous drain current, package limited
- 240 A pulsed drain current at duty cycle ≤1%
- 60 A avalanche current absolute maximum
- 180 mJ single avalanche energy with 0.1 mH load
- Maximum RDS(on) 0.0082 Ω at VGS=10 V
- Typical total gate charge 97 nC
- 0.5 °C/W junction-to-case thermal resistance
- TO-263 / D2PAK 3-lead package
Typical Applications
- Power MOSFET switching stages
- 100 V drain-source designs
- High-current power management circuits
- Avalanche-rated switching applications
- TO-263 PCB-mounted power assemblies
- Circuits requiring source-drain diode recovery data
Procurement Notes
When requesting a quote for SUM90N10-8M2P, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is SUM90N10-8M2P?
SUM90N10-8M2P is listed as a Vishay N-channel power MOSFET. The product summary identifies its configuration as a single N-channel MOSFET, and the ordering information lists the package as TO-263.
What voltage and current ratings define this MOSFET?
The extracted ratings specify 100 V drain-source voltage, ±20 V gate-source voltage, 90 A continuous drain current at TC=25°C or TC=70°C with package limitation, and 240 A pulsed drain current at duty cycle ≤1%.
What package is used for SUM90N10-8M2P?
The device uses a TO-263 / D2PAK 3-lead package. The extracted package data includes separate Version 1 and Version 2 dimensional ranges for D, E, and A dimensions.
What is the specified on-state resistance?
At VGS=10 V and ID=20 A under pulse-test conditions, drain-source on-state resistance is typ 0.0067 Ω and max 0.0082 Ω. At TJ=125°C under the same drive and current, it is typ 0.0127 Ω and max 0.0170 Ω.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.