XL332J Isolated IGBT/MOSFET Gate Driver

XINGLIGHT Power_Management — specifications, applications, sourcing support and RFQ.

XL332J Isolated IGBT/MOSFET Gate Driver

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
XL332J
Manufacturer
XINGLIGHT
Package
WSOP16
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

XL332J from XINGLIGHT is a Power_Management isolated IGBT/MOSFET gate driver supplied in a WSOP16 package. The device supports a 15-30 V operating VCC range, 3.3-5.5 V input supply, 2.5 A maximum peak output current, and 5000 Vrms isolation for one minute. It is specified for 150 A, 1200 V IGBT drive capability, with 50 kV/us minimum common-mode rejection and more than 7.0 mm creepage distance. Protection and control parameters include DESAT detection, FAULT output response within 5 us, UVLO thresholds, Miller clamping, and recommended external components for desaturation fault detection circuits.

Specifications

TypeDescription
Part NumberXL332J
ManufacturerXINGLIGHT
Product TypeLDO Regulator
CategoryPower Management
Component TypePower_IC
Package / CaseWSOP16
Common Mode Rejection50 kV/us minimum; feature specification
Operating VCC Range15-30 V; feature specification
Maximum Peak Output Current2.5 A; feature specification
IGBT Drive Capability150 A, 1200 V; output stage drive rating
Creepage Distance>7.0 mm; package isolation spacing
Operating Temperature-55 to 110 °C; feature specification
Molding Compound FlammabilityUL 94V-0; mechanical data
Shipping Quantity1000 pcs/Tape & Reel; part number XL332JSX
Marking CodeXL3120X; part number XL332JSX
Input Supply Voltage3.3-5.5 V; VCC1 pin function
FAULT Output Response Timewithin 5 us; DESAT voltage exceeds internal reference voltage
FAULT Internal Reference Voltage7 V; FAULT pin description
DESAT Internal Reference Voltage6.5 V; DESAT pin description, IGBT on
Average Input Current25 mA min; maximum ratings, Ta=25°C unless otherwise specified
Peak Transient Input Current1.0 A min; maximum ratings, Ta=25°C unless otherwise specified
Input Reverse Voltage5 V min; maximum ratings, Ta=25°C unless otherwise specified
Positive Input Supply Voltage-0.5 to 7.0 V; maximum ratings, VCC1, Ta=25°C unless otherwise specified
Input IC Power Dissipation150 mW min; maximum ratings, Ta=25°C unless otherwise specified
High Peak Output Current2.5 A max; maximum ratings, OH(PEAK)
Low Peak Output Current2.5 A max; maximum ratings, IOL(PEAK)
FAULT Output Current8.0 mA max; maximum ratings
FAULT Pin Voltage-0.5 to VCC1 V; maximum ratings
Total Output Supply Voltage-0.5 to 35 V; maximum ratings, VCC2-VEE
Negative Output Supply Voltage-0.5 to 15 V; maximum ratings, VE-VEE
Positive Output Supply Voltage-0.5 to 30 V; maximum ratings, VCC2-VE
Gate Drive Output Voltage-0.5 to VCC2 V; maximum ratings, VO(PEAK)
Peak Clamping Sinking Current1.7 A max; maximum ratings
Miller Clamping Pin Voltage-0.5 to VCC2 V; maximum ratings
DESAT VoltageVE to VE+10 V; maximum ratings
Output IC Power Dissipation0 to 600 mW; maximum ratings
Isolation Voltage5000 Vrms; 40-60% RH, AC for 1 minute
Operating Temperature-55 to +100 °C; thermal characteristics, TOPR
Storage Temperature Range-55 to +125 °C; thermal characteristics, TSTG
Soldering Temperature260 °C; 10 seconds
FAULT Logic Low Output Voltagetyp 0.07 V, max 0.4 V; IFAULT=1.1mA, VCC1=5.5V
FAULT Logic Low Output Voltagetyp 0.07 V, max 0.4 V; IFAULT=1.1mA, VCC1=3.3V
FAULT Logic High Output Currenttyp 0.05 uA, max 0.5 uA; VFAULT=5.5V, VCC1=5.5V
FAULT Logic High Output Currenttyp 0.01 uA, max 0.3 uA; VFAULT=3.3V, VCC1=3.3V
High Level Output Currentmin -0.5 A, typ -1.5 A; VO=VCC2-4
High Level Output Currentmin -2.0 A; VO=VCC2-15
Low Level Output Currentmin 0.5 A, typ 1.5 A; VO=VEE+2.5
Low Level Output Currentmin 2.0 A; VO=VEE+15
Low Level Output Current During Faultmin 90 mA, typ 140 mA, max 230 mA; VOUT-VEE=14V
High Level Output Voltagemin VCC-2.9 V, typ VCC-0.1 V; IO=-650uA
Low Level Output Voltagetyp 0.08 V, max 0.5 V; IO=100mA
Clamp Pin Threshold Voltagemax 2.5 V; electrical characteristics
Clamp Low Level Sinking Currentmin 0.5 A, typ 1.5 A; VO=VEE+2.5
High Level Supply Currenttyp 2.4 mA, max 4.5 mA; IO=0mA
Low Level Supply Currenttyp 2.4 mA, max 4.5 mA; IO=0mA
Blanking Capacitor Charging Currentmin -0.13 mA, typ -0.23 mA, max -0.33 mA; VDESAT=2V
Blanking Capacitor Discharge Currentmin 10 mA, typ 30 mA; VDESAT=7.0V
DESAT Thresholdmin 6 V, typ 6.6 V, max 7.5 V; VCC2-VE > VUVLO
UVLO Positive Thresholdmin 10.5 V, typ 11.6 V, max 12.5 V; IF=10mA, VO>5V
UVLO Negative Thresholdmin 9.2 V, typ 10.5 V, max 11.1 V; IF=10mA, VO<5V
UVLO Hysteresistyp 1.2 V; VUVLO+ minus VUVLO-
Threshold Input Current Low to Hightyp 2.6 mA, max 5.0 mA; IO=0mA, VO>5V
Threshold Input Voltage High to Lowmin 0.8 V; IO=0mA, VO<5V
Input Forward Voltagemin 1.2 V, typ 1.4 V, max 1.95 V; IF=10mA
Temperature Coefficient of Input Forward Voltagetyp -1.3 mV/°C; electrical characteristics
Input Reverse Breakdown Voltagemin 5 V; IR=10uA
Input Capacitancetyp 70 pF; f=1MHz, VF=0V
Propagation Delay Time to High Output Levelmin 50 ns, typ 180 ns, max 250 ns; Ta=-40°C to 85°C, VCC=5V, IF=7.5mA, Rg=10 ohm, Cg=10nF, f=10kHz, duty cycle=50%, IF=10mA, VCC2=30V
Propagation Delay Time to Low Output Levelmin 50 ns, typ 180 ns, max 250 ns; Ta=-40°C to 85°C, VCC=5V, IF=7.5mA, Rg=10 ohm, Cg=10nF, f=10kHz, duty cycle=50%, IF=10mA, VCC2=30V
Pulse Width Distortionmin -80 ns, typ 30 ns, max 80 ns; Ta=-40°C to 85°C, VCC=5V, IF=7.5mA, Rg=10 ohm, Cg=10nF, f=10kHz, duty cycle=50%, IF=10mA, VCC2=30V
Propagation Delay Difference Between Parts or Channelsmin -100 ns, max 100 ns; Ta=-40°C to 85°C, VCC=5V, IF=7.5mA, Rg=10 ohm, Cg=10nF, f=10kHz, duty cycle=50%, IF=10mA, VCC2=30V
Rise Timetyp 50 ns; switching characteristics
Fall Timetyp 50 ns; switching characteristics
DESAT Sense to 90% VO Delaytyp 0.25 us, max 0.5 us; CDESAT=100pF, Rg=10 ohm, Cg=10nF, VCC2=30V
DESAT Sense to 10% VO Delaytyp 2 us, max 3 us; CDESAT=100pF, Rg=10 ohm, Cg=10nF, VCC2=30V
DESAT Sense to Low Level FAULT Signal Delaytyp 0.25 us, max 0.5 us; CDESAT=100pF, RF=2.1k ohm, CF=open, Rg=10 ohm, Cg=10nF, VCC2=30V
DESAT Sense to DESAT Low Propagation Delaytyp 0.25 us; CDESAT=100pF, RF=2.1k ohm, CF=open, Rg=10 ohm, Cg=10nF, VCC2=30V
DESAT Input Mutetyp 5 us, max 15 us; switching characteristics
RESET to High Level FAULT Signal Delaytyp 1 us, max 2.0 us; CDESAT=100pF, RF=2.1k ohm, Rg=10 ohm, Cg=10nF, VCC1=5.5V, VCC2=30V
Recommended VCC for IGBT17.5 V; recommended application circuit guidance
Recommended VCC for MOSFET12.5 V; recommended application circuit guidance
Recommended Bypass Capacitors0.1 uF each; two supply bypass capacitors in application circuit
Desaturation Diode Requirement600/1200 V fast recovery, trr below 75 ns; recommended external component for fault detection
FAULT Pull-up Resistor2.1 kOhm; recommended application circuit
FAULT Filtering Capacitor1000 pF; recommended application circuit
VOUT Pull-down Resistor47 kOhm; recommended application circuit
Fault Mute Period5 us minimum; fault reset after fault detection
Datasheet Statusrequest_only

Product Overview

The XL332J is a XINGLIGHT Power_Management power IC for isolated IGBT and MOSFET gate-drive use. It is packaged in WSOP16 and includes output-stage capability for 150 A, 1200 V IGBT drive applications. Core operating limits include a 15-30 V VCC range, 3.3-5.5 V input supply voltage, and 2.5 A maximum peak output current.

Isolation and package-related specifications include 5000 Vrms isolation voltage under 40-60% RH AC testing for one minute, greater than 7.0 mm creepage distance, and UL 94V-0 molding compound flammability. Thermal and assembly data include operating temperature ratings of -55 to 110 °C as a feature specification, -55 to +100 °C in thermal characteristics, -55 to +125 °C storage, and 260 °C soldering for 10 seconds.

Protection-related functions are centered on DESAT and FAULT behavior. The FAULT pin uses a 7 V internal reference, DESAT has a 6.5 V internal reference when the IGBT is on, and FAULT output response is specified within 5 us after DESAT voltage exceeds the internal reference voltage. Recommended application values include 17.5 V VCC for IGBT use, 12.5 V for MOSFET use, 0.1 uF bypass capacitors, and a 600/1200 V fast-recovery desaturation diode with trr below 75 ns.

Key Features

  • Isolated IGBT/MOSFET gate driver in WSOP16 package
  • 15-30 V operating VCC range
  • 3.3-5.5 V input supply voltage
  • 2.5 A maximum peak output current
  • 5000 Vrms isolation for one minute
  • 50 kV/us minimum common-mode rejection
  • Greater than 7.0 mm creepage distance
  • DESAT threshold typ 6.6 V
  • FAULT response within 5 us
  • Miller clamp sinking current up to 1.7 A
  • Propagation delay typ 180 ns
  • UL 94V-0 molding compound flammability

Typical Applications

  • IGBT gate-drive circuits
  • MOSFET gate-drive circuits
  • Isolated power switching stages
  • DESAT fault detection circuits
  • Miller clamp gate control
  • 1200 V IGBT drive designs
  • Inverter power stages
  • Protected gate-driver outputs

Procurement Notes

When requesting a quote for XL332J, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What package is specified for the XL332J gate driver?

The extracted datasheet facts identify XL332J as an isolated IGBT/MOSFET gate driver in a WSOP16 package, with greater than 7.0 mm creepage distance and UL 94V-0 molding compound flammability.

What output current does XL332J support?

XL332J is specified with a 2.5 A maximum peak output current. The maximum ratings list both high peak output current and low peak output current as 2.5 A maximum.

What isolation rating is listed for XL332J?

The isolation voltage is listed as 5000 Vrms under 40-60% RH, AC for 1 minute. The package isolation spacing fact also lists creepage distance greater than 7.0 mm.

What fault-detection timing is specified for XL332J?

When DESAT voltage exceeds the internal reference voltage, FAULT output response is specified within 5 us. Switching data also lists DESAT sense to low-level FAULT signal delay as typ 0.25 us and max 0.5 us under stated test conditions.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 1, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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