XL816(X)-G Phototransistor Optocoupler

XINGLIGHT LED — specifications, applications, sourcing support and RFQ.

XL816(X)-G Phototransistor Optocoupler

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Part Number
XL816(X)-G
Manufacturer
XINGLIGHT
Package
DIP4, DIP4-M, SMD4; package outline dimensions in mm referenced but numeric dimensions not provided in supplied text
Category
LED
Product Type
SMD LED

Quick Sourcing Note

XL816(X)-G from XINGLIGHT is an LED-category phototransistor optocoupler supplied in DIP4, DIP4-M, and SMD4 package options. The device provides 5000 Vrms input-to-output isolation and a 200-600% current transfer ratio at IF=5 mA and VCE=5 V. Output ratings include 80 V collector-emitter voltage, 50 mA output collector current, and 150 mW collector power dissipation. Input ratings include 50 mA forward current, 6 V reverse voltage, and 70 mW input power dissipation. It supports isolated signal transfer, interface isolation, and phototransistor output switching applications where specified isolation and CTR ranking are required.

Specifications

TypeDescription
Part NumberXL816(X)-G
ManufacturerXINGLIGHT
Product TypeSMD LED
CategoryLED
Component TypeOther
Package / CaseDIP4, DIP4-M, SMD4; package outline dimensions in mm referenced but numeric dimensions not provided in supplied text
Current Transfer Ratio200-600 %
Isolation Voltage5000 Vrms
Collector-Emitter Breakdown Voltage>=80 V
Operating Temperature-55 to +100 °C
Molding Compound Flammability RatingUL 94V-0
Lead FinishMatte tin-plated leads
Solderability StandardMIL-STD-202, Method 208
Part Number PackageXL816X: DIP4
Part Number PackageXL816MX: DIP4-M
Part Number PackageXL816SX: SMD4
CTR Rank Mark C200-400 %
CTR Rank Mark D300-600 %
Forward Current50 mA
Input Peak Forward Current1 A
Reverse Voltage6 V
Input Power Dissipation70 mW
Collector Power Dissipation150 mW
Output Collector Current50 mA
Collector-Emitter Voltage80 V
Emitter-Collector Voltage7 V
Total Power Dissipation200 mW
Isolation Voltage5000 Vrms
Rated Impulse Isolation Voltage6000 V
Rated Repetitive Peak Isolation Voltage630 V
Thermal Resistance Junction-to-Air430 °C/W
Thermal Resistance Junction-to-Case350 °C/W
Thermal Resistance Junction-to-Lead368 °C/W
Operating Temperature-55 to +110 °C
Storage Temperature Range-55 to +125 °C
Soldering Temperature260 °C
Forward Voltagetyp 1.2 V, max 1.4 V
Peak Forward Voltagemax 3.0 V
Input Reverse Currentmax 10 uA
Input Capacitancetyp 30 pF, max 250 pF
Collector-Emitter Dark Currentmax 100 nA
Collector-Emitter Breakdown Voltagemin 80 V
Emitter-Collector Breakdown Voltagemin 7 V
Collector Currentmin 2.5 mA, max 30 mA
Current Transfer Ratiomin 200 %, max 600 %
Collector-Emitter Saturation Voltagetyp 0.1 V, max 0.2 V
Isolation Resistancemin 1×10^12 Ω
Isolation Currentmax 2 uA
Floating Capacitancetyp 0.6 pF, max 1.0 pF
Cut-off Frequencytyp 80 kHz
Turn-On Timetyp 4 us, max 18 us
Turn-Off Timetyp 3 us, max 18 us
Reflow Preheat Temperature150-200 °C
Reflow Preheat Time60-120 s
Reflow Ramp-Up Rate3 °C/s
Reflow Liquidus Temperature217 °C
Reflow Time Above Liquidus60-150 s
Reflow Peak Temperature260 °C
Reflow Peak Time30 s
Reflow Ramp-Down Rate6 °C/s
Reflow Cyclesno more than 3 times
Wave Soldering Average Ramp-Up Rate~200 °C/s
Wave Soldering Preheat Heating Ratetyp 1-2 °C/s, max 4 °C/s
Wave Soldering Final Preheat Temperature~130 °C
Wave Soldering Preheat Time>60 s
Wave Soldering Peak Temperature260 °C
Wave Soldering Peak Time10 s
Wave Soldering Ramp-Down Ratemax 5 °C/s
Hand Soldering Iron Temperature360 °C +5 °C
DIP4 Packing Quantity100 pcs/tube, 5000 pcs/box, 50000 pcs/carton
DIP4-M Packing Quantity100 pcs/tube, 5000 pcs/box, 50000 pcs/carton
SMD4 Packing Quantity2000 pcs/reel, 4000 pcs/box, 40000 pcs/carton
Datasheet Statusrequest_only

Product Overview

The XL816(X)-G is a XINGLIGHT phototransistor optocoupler in the LED category. It combines an input LED with a phototransistor output and is specified with 5000 Vrms isolation between input and output. The datasheet lists a 200-600% current transfer ratio at IF=5 mA and VCE=5 V, with CTR rank C at 200-400% and rank D at 300-600%. Collector-emitter breakdown voltage is specified at a minimum of 80 V.

Package variants include XL816X in DIP4, XL816MX in DIP4-M, and XL816SX in SMD4. Tube packing is listed for DIP4 and DIP4-M, while SMD4 uses tape-and-reel packing. The molding compound is rated UL 94V-0, with matte tin-plated leads and solderability to MIL-STD-202, Method 208.

Electrical and assembly data include 50 mA forward current, 6 V reverse voltage, 80 kHz typical cut-off frequency, 4 us typical turn-on time, and 3 us typical turn-off time. Reflow, wave soldering, and hand soldering limits are specified for assembly planning.

Key Features

  • Phototransistor optocoupler with 200-600% CTR
  • 5000 Vrms input-to-output isolation rating
  • Minimum 80 V collector-emitter breakdown voltage
  • DIP4, DIP4-M, and SMD4 package options
  • UL 94V-0 rated molding compound
  • Matte tin-plated leads with MIL-STD-202 solderability
  • Typical 80 kHz cut-off frequency
  • Typical 4 us turn-on and 3 us turn-off times
  • Reflow peak temperature specified at 260 °C
  • Operating temperature range listed to +110 °C

Typical Applications

  • Input-output signal isolation
  • Isolated digital interface circuits
  • Phototransistor output switching
  • CTR-ranked optocoupler selection
  • DIP4 through-hole assemblies
  • SMD4 tape-and-reel assembly
  • High-voltage isolation barriers

Procurement Notes

When requesting a quote for XL816(X)-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.

FAQ

What type of component is XL816(X)-G?

XL816(X)-G is a XINGLIGHT phototransistor optocoupler in the LED category. The datasheet lists DIP4, DIP4-M, and SMD4 package options with input-output isolation and phototransistor output characteristics.

What current transfer ratio does XL816(X)-G specify?

The current transfer ratio is specified as 200-600% at IF=5 mA and VCE=5 V. The datasheet also lists CTR rank C at 200-400% and rank D at 300-600% under the same IF and VCE conditions.

What isolation voltage is listed for XL816(X)-G?

The datasheet lists 5000 Vrms isolation voltage between input and output. A separate maximum-rating entry specifies 5000 Vrms at 40-60% relative humidity with AC applied for 1 minute.

Which package and packing options are listed?

XL816X is listed as DIP4 with 100 pcs per tube. XL816MX is DIP4-M with 100 pcs per tube. XL816SX is SMD4 with 2000 pcs per tape-and-reel, and SMD4 packing is also listed as 2000 pcs per reel.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 2, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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