Specifications
| Type | Description |
|---|---|
| Part Number | XL816(X)S-G |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | DIP4, DIP4-M, SMD4; dimensions shown in datasheet but numeric dimensions not provided in extracted text |
| Component Type | Other |
| Current Transfer Ratio | 200-600 %; IF=5 mA, VCE=5 V |
| Isolation Voltage | 5000 Vrms; input to output |
| Collector-Emitter Breakdown Voltage | ≥80 V; BVCEO |
| Operating Temperature | -55 to +100 °C; feature summary |
| Package Options | DIP4, DIP4-M, SMD4; case/package types |
| Molding Compound Flammability | UL 94V-0; case material rating |
| Terminal Finish | matte tin-plated leads; solderability per MIL-STD-202 Method 208 |
| Part Number XL816X Package | DIP4; 100 pcs/tube; marking code XL816X |
| Part Number XL816MX Package | DIP4-M; 100 pcs/tube; marking code XL816X |
| Part Number XL816SX Package | SMD4; 2000 pcs/tape and reel; marking code XL816X |
| CTR Rank Marking Options | C, D, or none; ordering information / marking information |
| Forward Current | 50 mA max; TA=25°C unless otherwise specified |
| Input Peak Forward Current | 1 A max; pulse width ≤1 us, duty ratio 0.001 |
| Reverse Voltage | 6 V max; TA=25°C unless otherwise specified |
| Input Power Dissipation | 70 mW max; TA=25°C unless otherwise specified |
| Collector Power Dissipation | 150 mW max; TA=25°C unless otherwise specified |
| Output Collector Current | 50 mA max; TA=25°C unless otherwise specified |
| Collector-Emitter Voltage | 80 V max; TA=25°C unless otherwise specified |
| Emitter-Collector Voltage | 7 V max; TA=25°C unless otherwise specified |
| Total Power Dissipation | 200 mW max; TA=25°C unless otherwise specified |
| Isolation Voltage | 5000 Vrms; 40-60% RH, AC for 1 minute |
| Rated Impulse Isolation Voltage | 6000 V; VIOTM |
| Rated Repetitive Peak Isolation Voltage | 630 V; VIORM |
| Thermal Resistance Junction-to-Air | 430 °C/W; RθJA |
| Thermal Resistance Junction-to-Case | 350 °C/W; RθJC |
| Thermal Resistance Junction-to-Lead | 368 °C/W; RθJL |
| Operating Temperature | -55 to +110 °C; TOPR |
| Storage Temperature Range | -55 to +125 °C; TSTG |
| Soldering Temperature | 260 °C; 10 seconds |
| Forward Voltage | typ 1.2 V, max 1.4 V; IF=20 mA, TA=25°C |
| Peak Forward Voltage | max 3.0 V; IFM=0.5 A, TA=25°C |
| Input Reverse Current | max 10 uA; VR=4 V, TA=25°C |
| Input Capacitance | typ 30 pF, max 250 pF; VR=0 V, f=1 kHz, TA=25°C |
| Collector-Emitter Dark Current | max 100 nA; VCE=20 V, IF=0, TA=25°C |
| Collector-Emitter Breakdown Voltage | min 80 V; IC=0.1 mA, IF=0, TA=25°C |
| Emitter-Collector Breakdown Voltage | min 7 V; IE=10 uA, IF=0, TA=25°C |
| Collector Current | min 2.5 mA, max 30 mA; IF=5 mA, VCE=5 V, TA=25°C |
| Current Transfer Ratio | min 200 %, max 600 %; IF=5 mA, VCE=5 V, TA=25°C |
| Collector-Emitter Saturation Voltage | typ 0.1 V, max 0.2 V; IF=20 mA, IC=1 mA, TA=25°C |
| Isolation Resistance | min 1×10^12 Ω; VIO=500 Vdc, 40-60% RH |
| Isolation Current | max 2 uA; DC 6000 V, 40-60% RH |
| Floating Capacitance | typ 0.6 pF, max 1.0 pF; VIO=0, f=1 MHz |
| Cut-off Frequency | min 80 kHz; VCE=5 V, IC=2 mA, RL=100 Ω, -3 dB |
| Turn-On Time | typ 4 us, max 18 us; VCE=2 V, RL=100 Ω, IC=2 mA |
| Turn-Off Time | typ 3 us, max 18 us; VCE=2 V, RL=100 Ω, IC=2 mA |
| CTR Rank C | 200-400 %; IF=5 mA, VCE=5 V |
| CTR Rank D | 300-600 %; IF=5 mA, VCE=5 V |
| Reflow Preheat Temperature | 150-200 °C; Ts |
| Reflow Preheat Time | 60-120 s; ts |
| Reflow Ramp-Up Rate | 3 °C/s max; TL to TP |
| Reflow Liquidus Temperature | 217 °C; TL |
| Reflow Time Above Liquidus | 60-150 s; tL |
| Reflow Peak Temperature | 260 °C; Tp |
| Reflow Time Near Peak | 30 s; Tc between TP-5 and TP |
| Reflow Ramp-Down Rate | 6 °C/s max; TP to TL |
| Reflow Cycle Limit | no more than 3 times; recommended reflow profile |
| Wave Soldering Average Ramp-Up Rate | ~200 °C/s; profile feature |
| Wave Soldering Preheat Heating Rate | typ 1-2 °C/s, max 4 °C/s; during preheat |
| Wave Soldering Final Preheat Temperature | ~130 °C; Ts |
| Wave Soldering Preheat Time | >60 s; 25°C to Ts |
| Wave Soldering Peak Temperature | 260 °C; Tp |
| Wave Soldering Time Within Peak Temperature | 10 s; tp |
| Wave Soldering Ramp-Down Rate | 5 °C/s max; profile feature |
| Hand Soldering Iron Temperature | 360 °C +5 °C; within 3 s; for rework or sample testing |
| DIP4 Packing Quantity | 100 pcs/tube, 5000 pcs/box, 50000 pcs/carton; tube packing, 50 tubes/box, 10 boxes/carton |
| DIP4-M Packing Quantity | 100 pcs/tube, 5000 pcs/box, 50000 pcs/carton; tube packing, 50 tubes/box, 10 boxes/carton |
| SMD4 Packing Quantity | 2000 pcs/reel, 4000 pcs/box, 40000 pcs/carton; reel packing, 2 reels/box, 10 boxes/carton |
| Datasheet Status | request_only |
Product Overview
The XL816(X)S-G is a XINGLIGHT phototransistor optocoupler in the LED category. It uses an optically coupled input and transistor output structure, with current transfer ratio specified from 200% to 600% at IF=5 mA and VCE=5 V. CTR rank options include C at 200-400% and D at 300-600%, with C, D, or no rank marking available.
The device is offered across DIP4, DIP4-M, and SMD4 case styles. The datasheet notes package dimensions, but numeric dimensions are not included in the extracted text. Ordering data lists XL816X in DIP4, XL816MX in DIP4-M, and XL816SX in SMD4, with tube packing for DIP variants and tape-and-reel packing for SMD4.
Key limits include 5000 Vrms isolation voltage, 6000 V rated impulse isolation voltage, 630 V repetitive peak isolation voltage, 80 V maximum collector-emitter voltage, and -55 to +110 °C operating temperature rating. Assembly parameters include 260 °C peak reflow and wave soldering profiles, plus hand soldering at 360 °C +5 °C within 3 s for rework or sample testing.
Key Features
- Phototransistor optocoupler output structure
- 200-600% CTR at IF=5 mA, VCE=5 V
- 5000 Vrms input-to-output isolation voltage
- Minimum 80 V collector-emitter breakdown voltage
- DIP4, DIP4-M, and SMD4 package options
- UL 94V-0 molding compound flammability rating
- Matte tin-plated leads per MIL-STD-202 Method 208
- -55 to +110 °C rated operating temperature
- Minimum 80 kHz cut-off frequency
- Reflow and wave soldering profiles specified
Typical Applications
- Isolated signal transfer
- Logic-to-transistor output coupling
- Microcontroller input isolation
- Industrial control interfaces
- Power supply feedback isolation
- Board-level isolation channels
- SMD or DIP optocoupler assemblies
Procurement Notes
When requesting a quote for XL816(X)S-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is XL816(X)S-G?
XL816(X)S-G is a XINGLIGHT phototransistor optocoupler listed in the LED category. It is offered in DIP4, DIP4-M, and SMD4 package options with transistor-output electrical specifications.
What current transfer ratio is specified for this optocoupler?
The datasheet specifies 200% to 600% current transfer ratio at IF=5 mA and VCE=5 V. Rank C is 200-400%, while rank D is 300-600% under the same test condition.
What isolation rating does XL816(X)S-G provide?
The extracted datasheet facts list 5000 Vrms isolation voltage input to output, also specified as AC for 1 minute at 40-60% relative humidity. Rated impulse isolation voltage is 6000 V.
Which package and packing options are listed?
Package options are DIP4, DIP4-M, and SMD4. DIP4 and DIP4-M are listed as 100 pieces per tube, while SMD4 is listed as 2000 pieces per tape-and-reel.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 2, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.