Specifications
| Type | Description |
|---|---|
| Part Number | XL817(X)S-F |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | DIP4, DIP4-M, SMD4 |
| Component Type | Other |
| Current Transfer Ratio | 50-600 %; IF=5 mA, VCE=5 V |
| Isolation Voltage | 5000 Vrms; input to output |
| Collector-Emitter Breakdown Voltage | >=80 V; BVCEO |
| Operating Temperature | -55 to +110 °C; operating |
| Molding Compound Flammability | UL 94V-0; case material |
| Forward Current | 50 mA; maximum rating, TA=25°C unless otherwise specified |
| Input Peak Forward Current | 1 A; pulse width <=1 us, duty ratio 0.001 |
| Reverse Voltage | 6 V; maximum rating, TA=25°C unless otherwise specified |
| Input Power Dissipation | 70 mW; maximum rating, TA=25°C unless otherwise specified |
| Collector Power Dissipation | 150 mW; maximum rating, TA=25°C unless otherwise specified |
| Output Collector Current | 50 mA; maximum rating, TA=25°C unless otherwise specified |
| Collector-Emitter Voltage | 80 V; maximum rating, TA=25°C unless otherwise specified |
| Emitter-Collector Voltage | 7 V; maximum rating, TA=25°C unless otherwise specified |
| Total Power Dissipation | 200 mW; TA=25°C unless otherwise specified |
| Isolation Voltage | 5000 Vrms; 40-60% RH, AC for 1 minute |
| Rated Impulse Isolation Voltage | 6000 V; VIOTM |
| Rated Repetitive Peak Isolation Voltage | 630 V; VIORM |
| Thermal Resistance Junction-to-Air | 430 °C/W; RθJA |
| Thermal Resistance Junction-to-Case | 350 °C/W; RθJC |
| Thermal Resistance Junction-to-Lead | 368 °C/W; RθJL |
| Storage Temperature Range | -55 to +125 °C; storage |
| Soldering Temperature | 260 °C; 10 seconds |
| Forward Voltage | typ 1.2 V, max 1.4 V; IF=20 mA, TA=25°C |
| Peak Forward Voltage | max 3.0 V; IFM=0.5 A, TA=25°C |
| Input Reverse Current | max 10 uA; VR=4 V, TA=25°C |
| Input Capacitance | typ 30 pF, max 250 pF; VR=0 V, f=1 kHz, TA=25°C |
| Collector-Emitter Dark Current | max 100 nA; VCE=20 V, IF=0, TA=25°C |
| Collector-Emitter Breakdown Voltage | min 80 V; IC=0.1 mA, IF=0, TA=25°C |
| Emitter-Collector Breakdown Voltage | min 7 V; IE=10 uA, IF=0, TA=25°C |
| Collector Current | min 2.5 mA, max 30 mA; IF=5 mA, VCE=5 V, TA=25°C |
| Current Transfer Ratio | min 50 %, max 600 %; IF=5 mA, VCE=5 V, TA=25°C |
| Collector-Emitter Saturation Voltage | typ 0.1 V, max 0.2 V; IF=20 mA, IC=1 mA, TA=25°C |
| Isolation Resistance | min 1×10^12 ohm; VIO=500 Vdc, 40-60% RH, TA=25°C |
| Isolation Current | max 2 uA; DC6000 V, 40-60% RH, TA=25°C |
| Floating Capacitance | typ 0.6 pF, max 1.0 pF; VIO=0 V, f=1 MHz, TA=25°C |
| Cut-off Frequency | typ 80 kHz; VCE=5 V, IC=2 mA, RL=100 ohm, -3 dB, TA=25°C |
| Turn On Time | typ 4 us, max 18 us; VCE=2 V, RL=100 ohm, IC=2 mA, TA=25°C |
| Turn Off Time | typ 3 us, max 18 us; VCE=2 V, RL=100 ohm, IC=2 mA, TA=25°C |
| CTR Rank A | 80-160 %; IF=5 mA, VCE=5 V |
| CTR Rank B | 130-260 %; IF=5 mA, VCE=5 V |
| CTR Rank C | 200-400 %; IF=5 mA, VCE=5 V |
| CTR Rank D | 300-600 %; IF=5 mA, VCE=5 V |
| CTR No Mark Rank | 50-600 %; IF=5 mA, VCE=5 V |
| Reflow Preheat Temperature | 150-200 °C; Ts |
| Reflow Preheat Time | 60-120 s; ts |
| Reflow Ramp-up Rate | 3 °C/s; TL to TP |
| Reflow Liquidus Temperature | 217 °C; TL |
| Reflow Time Above Liquidus | 60-150 s; tL |
| Reflow Peak Temperature | 260 °C; Tp |
| Reflow Time Within 5°C of Peak | 30 s; Tc between TP-5 and TP |
| Reflow Ramp-down Rate | 6 °C/s; TP to TL |
| Reflow Cycles | no more than 3 times; recommended reflow profile |
| Wave Soldering Peak Temperature | 260 °C; Tp |
| Wave Soldering Peak Time | 10 s; tp |
| Hand Soldering Iron Temperature | 360 °C +5 °C; within 3 s, product rework or sample testing only |
| DIP4 Shipping Quantity | 100 pcs/tube; XL817X, tube |
| DIP4-M Shipping Quantity | 100 pcs/tube; XL817MX, tube |
| SMD4 Shipping Quantity | 2000 pcs/tape and reel; XL817SX |
| Datasheet Status | request_only |
Product Overview
The XL817(X)S-F is a XINGLIGHT phototransistor optocoupler in the LED category. It uses an input LED and phototransistor output structure with a specified current transfer ratio of 50-600% at IF=5 mA and VCE=5 V. Output limits include an 80 V collector-emitter rating, 7 V emitter-collector rating, and 50 mA output collector current rating.
Isolation parameters include 5000 Vrms input-to-output isolation, 6000 V rated impulse isolation voltage, 630 V rated repetitive peak isolation voltage, and minimum 1×10^12 ohm isolation resistance at VIO=500 Vdc. The floating capacitance is specified at 0.6 pF typical and 1.0 pF maximum.
Package options listed for the device family are DIP4, DIP4-M, and SMD4. Assembly data includes a 260 °C reflow peak, 217 °C liquidus temperature, 260 °C wave soldering peak for 10 seconds, and hand-soldering iron temperature of 360 °C +5 °C within 3 seconds for rework or sample testing only.
Key Features
- Phototransistor optocoupler with LED input structure
- 50-600% CTR at IF=5 mA, VCE=5 V
- 5000 Vrms input-to-output isolation rating
- 6000 V rated impulse isolation voltage
- 80 V minimum collector-emitter breakdown voltage
- -55 to +110 °C operating temperature range
- UL 94V-0 molding compound flammability
- Typical 80 kHz cut-off frequency
- Typical 4 us turn-on and 3 us turn-off
- DIP4, DIP4-M, and SMD4 package options
Typical Applications
- Input-to-output signal isolation
- Phototransistor output switching circuits
- Low-speed digital interface isolation
- Controller input isolation paths
- Isolated transistor drive sensing
- DIP4 tube assembly builds
- SMD4 tape-and-reel assembly
Procurement Notes
When requesting a quote for XL817(X)S-F, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is the XL817(X)S-F?
The XL817(X)S-F is a XINGLIGHT phototransistor optocoupler in the LED category. The extracted package options are DIP4, DIP4-M, and SMD4, with shipping formats listed for tube and tape-and-reel variants.
What isolation voltage is specified for this optocoupler?
The device specifies 5000 Vrms isolation voltage. The datasheet facts list this both as input-to-output isolation and as an AC one-minute rating at 40-60% relative humidity.
What current transfer ratio range is listed?
The current transfer ratio is specified as 50-600% at IF=5 mA and VCE=5 V. Rank options include A at 80-160%, B at 130-260%, C at 200-400%, and D at 300-600%.
What assembly temperature limits are provided?
Assembly facts include a 260 °C reflow peak, 217 °C liquidus temperature, no more than three reflow cycles, 260 °C wave soldering peak for 10 seconds, and 360 °C +5 °C hand soldering within 3 seconds for rework or sample testing only.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 3, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.