Specifications
| Type | Description |
|---|---|
| Part Number | XL817（X）-G |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | DIP4, DIP4-M, SMD4; package outline dimensions referenced in mm but numeric dimensions not provided in text |
| Current Transfer Ratio | 50-600 %; IF=5mA, VCE=5V |
| Isolation Voltage | 5000 Vrms; input to output |
| Collector-Emitter Breakdown Voltage | >=80 V; BVCEO |
| Operating Temperature | -55 to +110 °C; operating range |
| Molding Compound Flammability Rating | UL 94V-0; case material |
| Forward Current | 50 mA; maximum rating, TA=25°C unless otherwise specified |
| Input Peak Forward Current | 1 A; pulse width <=1us, duty ratio 0.001 |
| Reverse Voltage | 6 V; maximum rating, TA=25°C unless otherwise specified |
| Input Power Dissipation | 70 mW; maximum rating, TA=25°C unless otherwise specified |
| Collector Power Dissipation | 150 mW; maximum rating, TA=25°C unless otherwise specified |
| Output Collector Current | 50 mA; maximum rating, TA=25°C unless otherwise specified |
| Collector-Emitter Voltage | 80 V; maximum rating, TA=25°C unless otherwise specified |
| Emitter-Collector Voltage | 7 V; maximum rating, TA=25°C unless otherwise specified |
| Total Power Dissipation | 200 mW; TA=25°C unless otherwise specified |
| Isolation Voltage | 5000 Vrms; 40-60% RH, AC for 1 minute |
| Rated Impulse Isolation Voltage | 6000 V; TA=25°C unless otherwise specified |
| Rated Repetitive Peak Isolation Voltage | 630 V; TA=25°C unless otherwise specified |
| Thermal Resistance Junction-to-Air | 430 °C/W; TA=25°C unless otherwise specified |
| Thermal Resistance Junction-to-Case | 350 °C/W; TA=25°C unless otherwise specified |
| Thermal Resistance Junction-to-Lead | 368 °C/W; TA=25°C unless otherwise specified |
| Storage Temperature Range | -55 to +125 °C; storage |
| Soldering Temperature | 260 °C; 10 seconds |
| Forward Voltage | typ 1.2 V, max 1.4 V; IF=20mA, TA=25°C |
| Peak Forward Voltage | max 3.0 V; IFM=0.5A, TA=25°C |
| Input Reverse Current | max 10 uA; VR=4V, TA=25°C |
| Input Capacitance | typ 30 pF, max 250 pF; VR=0V, f=1kHz, TA=25°C |
| Collector-Emitter Dark Current | max 100 nA; VCE=20V, IF=0, TA=25°C |
| Collector-Emitter Breakdown Voltage | min 80 V; IC=0.1mA, IF=0, TA=25°C |
| Emitter-Collector Breakdown Voltage | min 7 V; IE=10uA, IF=0, TA=25°C |
| Collector Current | min 2.5 mA, max 30 mA; IF=5mA, VCE=5V, TA=25°C |
| Current Transfer Ratio | min 50 %, max 600 %; IF=5mA, VCE=5V, TA=25°C |
| Collector-Emitter Saturation Voltage | typ 0.1 V, max 0.2 V; IF=20mA, IC=1mA, TA=25°C |
| Isolation Resistance | min 1e12 ohm; VIO=500Vdc, 40-60% RH, TA=25°C |
| Isolation Current | max 2 uA; DC6000V, 40-60% RH, TA=25°C |
| Floating Capacitance | typ 0.6 pF, max 1.0 pF; VIO=0, f=1MHz, TA=25°C |
| Cut-off Frequency | typ 80 kHz; VCE=5V, IC=2mA, RL=100ohm, -3dB, TA=25°C |
| Turn On Time | typ 4 us, max 18 us; VCE=2V, RL=100ohm, IC=2mA, TA=25°C |
| Turn Off Time | typ 3 us, max 18 us; VCE=2V, RL=100ohm, IC=2mA, TA=25°C |
| CTR Rank A | 80-160 %; IF=5mA, VCE=5V |
| CTR Rank B | 130-260 %; IF=5mA, VCE=5V |
| CTR Rank C | 200-400 %; IF=5mA, VCE=5V |
| CTR Rank D | 300-600 %; IF=5mA, VCE=5V |
| CTR No Mark Rank | 50-600 %; IF=5mA, VCE=5V |
| Reflow Preheat Temperature | 150-200 °C; Ts, reflow soldering profile |
| Reflow Preheat Time | 60-120 s; ts, reflow soldering profile |
| Reflow Ramp-Up Rate | 3 °C/s; TL to TP |
| Reflow Liquidus Temperature | 217 °C; TL |
| Reflow Time Above Liquidus | 60-150 s; tL |
| Reflow Peak Temperature | 260 °C; Tp |
| Reflow Peak Time | 30 s; time during which Tc is between TP-5 and TP |
| Reflow Ramp-Down Rate | 6 °C/s; TP to TL |
| Wave Soldering Peak Temperature | 260 °C; Tp |
| Hand Soldering Iron Temperature | 360 °C +5 °C; within 3 seconds; rework or sample testing only |
| DIP4 Shipping Quantity | 100 pcs/tube; tube packing |
| DIP4-M Shipping Quantity | 100 pcs/tube; tube packing |
| SMD4 Shipping Quantity | 2000 pcs/tape and reel; reel packing |
| Datasheet Status | request_only |
Product Overview
The XL817（X）-G is a XINGLIGHT phototransistor optocoupler in the LED category. Its input side is specified with a 50 mA maximum forward current, 6 V reverse voltage rating, and 70 mW input power dissipation. At IF=20mA and TA=25°C, forward voltage is listed as 1.2 V typical and 1.4 V maximum.
On the output side, the device is rated for 50 mA collector current, 80 V collector-emitter voltage, and 150 mW collector power dissipation. The current transfer ratio is specified from 50% to 600% at IF=5mA and VCE=5V, with rank options A, B, C, D, and no-mark ranges. Switching data includes 4 us typical turn-on time, 3 us typical turn-off time, and 80 kHz typical cut-off frequency under the stated test conditions.
Package support covers DIP4, DIP4-M, and SMD4 formats. Assembly-related facts include 260°C soldering for 10 seconds, 260°C reflow peak temperature, 260°C wave soldering peak temperature, and SMD4 tape-and-reel packing at 2000 pcs/reel.
Key Features
- 5000 Vrms input-to-output isolation voltage
- 50-600% CTR at IF=5mA and VCE=5V
- 80 V collector-emitter voltage maximum rating
- -55 to +110 °C operating temperature range
- 1.2 V typical forward voltage at IF=20mA
- 0.1 V typical collector-emitter saturation voltage
- 80 kHz typical cut-off frequency
- DIP4, DIP4-M, and SMD4 package options
- UL 94V-0 molding compound flammability rating
- 260 °C reflow and wave soldering peak temperature
Typical Applications
- Isolated signal transfer
- Phototransistor output switching
- CTR-ranked circuit designs
- DIP4 through-hole assemblies
- SMD4 tape-and-reel assembly
- Input-to-output isolation interfaces
- Temperature-rated control circuits
Procurement Notes
When requesting a quote for XL817（X）-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is XL817（X）-G?
XL817（X）-G is specified as a XINGLIGHT phototransistor optocoupler in the LED category. The extracted package information lists DIP4, DIP4-M, and SMD4 options, with package outline dimensions referenced in millimeters but no numeric dimensions provided.
What isolation rating is specified for XL817（X）-G?
The datasheet facts list 5000 Vrms isolation voltage from input to output. A separate maximum-rating entry also specifies 5000 Vrms under 40-60% RH with AC applied for 1 minute.
What CTR range does XL817（X）-G provide?
The current transfer ratio is specified as 50% to 600% at IF=5mA and VCE=5V. Rank ranges are also listed: A is 80-160%, B is 130-260%, C is 200-400%, and D is 300-600%.
What soldering limits are provided for this part?
The extracted facts list 260°C soldering temperature for 10 seconds, 260°C reflow peak temperature, and 260°C wave soldering peak temperature. Hand soldering is listed as 360°C +5°C within 3 seconds for rework or sample testing only.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 3, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.