XL827S-G Phototransistor Optocoupler

XINGLIGHT LED — specifications, applications, sourcing support and RFQ.

XL827S-G Phototransistor Optocoupler

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
XL827S-G
Manufacturer
XINGLIGHT
Package
DIP8, DIP8-M, SMD8
Category
LED
Product Type
SMD LED

Quick Sourcing Note

XL827S-G from XINGLIGHT is an LED-category phototransistor optocoupler offered in DIP8, DIP8-M, and SMD8 package options. It provides 5000 Vrms input-to-output isolation and a 50-600% current transfer ratio at IF=5 mA and VCE=5 V. Output ratings include 80 V collector-emitter voltage and 50 mA collector current, with operating temperature from -55 to +110 °C. Electrical characteristics include typ 80 kHz cut-off frequency, typ 4 us turn-on time, and typ 3 us turn-off time. Assembly data covers reflow, wave soldering, and hand soldering profiles.

Specifications

TypeDescription
Part NumberXL827S-G
ManufacturerXINGLIGHT
Product TypeSMD LED
CategoryLED
Package CaseDIP8, DIP8-M, SMD8
Current Transfer Ratio50-600 %; IF=5 mA, VCE=5 V
Isolation Voltage5000 Vrms; input to output
Collector-Emitter Breakdown Voltage>=80 V; BVCEO
Operating Temperature-55 to +110 °C; operating range
Molding Compound Flammability RatingUL 94V-0; case material
DIP8 Shipping Quantity45 pcs/tube; XL827X package
DIP8-M Shipping Quantity45 pcs/tube; XL827MX package
SMD8 Shipping Quantity1000 pcs/tape and reel; XL827SX package
Forward Current50 mA; maximum rating, Ta=25°C
Input Peak Forward Current1 A; pulse width <=1 us, duty ratio 0.001, Ta=25°C
Reverse Voltage6 V; maximum rating, Ta=25°C
Input Power Dissipation70 mW; maximum rating, Ta=25°C
Collector Power Dissipation150 mW; maximum rating, Ta=25°C
Collector Current50 mA; maximum rating, Ta=25°C
Collector-Emitter Voltage80 V; maximum rating, output, Ta=25°C
Emitter-Collector Voltage7 V; maximum rating, output, Ta=25°C
Total Power Dissipation200 mW; thermal characteristic, Ta=25°C
Isolation Voltage5000 Vrms; 40-60% RH, AC for 1 minute
Rated Impulse Isolation Voltage6000 V; VIOTM
Rated Repetitive Peak Isolation Voltage630 V; VIORM
Thermal Resistance Junction-to-Air430 °C/W; RθJA
Thermal Resistance Junction-to-Case350 °C/W; RθJC
Thermal Resistance Junction-to-Lead368 °C/W; RθJL
Storage Temperature Range-55 to +125 °C; TSTG
Soldering Temperature260 °C; 10 seconds
Forward Voltagetyp 1.2 V, max 1.4 V; IF=20 mA, Ta=25°C
Peak Forward Voltagemax 3.0 V; IFM=0.5 A, Ta=25°C
Input Reverse Currentmax 10 uA; VR=4 V, Ta=25°C
Input Capacitancetyp 30 pF, max 250 pF; VR=0 V, f=1 kHz, Ta=25°C
Collector-Emitter Dark Currentmax 100 nA; VCE=20 V, IF=0, Ta=25°C
Collector-Emitter Breakdown Voltagemin 80 V; IC=0.1 mA, IF=0, Ta=25°C
Emitter-Collector Breakdown Voltagemin 7 V; IE=10 uA, IF=0, Ta=25°C
Collector Currentmin 2.5 mA, max 30 mA; IF=5 mA, VCE=5 V, Ta=25°C
Current Transfer Ratiomin 50 %, max 600 %; IF=5 mA, VCE=5 V, Ta=25°C
Collector-Emitter Saturation Voltagetyp 0.1 V, max 0.2 V; IF=20 mA, IC=1 mA, Ta=25°C
Isolation Resistancemin 1×10^12 ohm; VIO=500 Vdc, 40-60% RH, Ta=25°C
Isolation Currentmax 2 uA; DC 6000 V, 40-60% RH, Ta=25°C
Floating Capacitancetyp 0.6 pF, max 1.0 pF; VIO=0, f=1 MHz, Ta=25°C
Cut-off Frequencytyp 80 kHz; VCE=5 V, IC=2 mA, RL=100 ohm, -3 dB, Ta=25°C
Turn On Timetyp 4 us, max 18 us; VCE=2 V, IC=2 mA, RL=100 ohm, Ta=25°C
Turn Off Timetyp 3 us, max 18 us; VCE=2 V, IC=2 mA, RL=100 ohm, Ta=25°C
CTR Rank A80-160 %; IF=5 mA, VCE=5 V
CTR Rank B130-260 %; IF=5 mA, VCE=5 V
CTR Rank C200-400 %; IF=5 mA, VCE=5 V
CTR Rank D300-600 %; IF=5 mA, VCE=5 V
CTR No Mark50-600 %; IF=5 mA, VCE=5 V
Reflow Preheat Temperature150-200 °C; Ts
Reflow Preheat Time60-120 s; ts
Reflow Ramp-up Rate3 °C/s; TL to TP
Reflow Liquidus Temperature217 °C; TL
Reflow Time Above Liquidus60-150 s; tL
Reflow Peak Temperature260 °C; Tp
Reflow Time Within 5°C of Peak30 s; Tc between TP-5 and TP
Reflow Ramp-down Rate6 °C/s; TP to TL
Reflow Cycle Limitno more than 3 times; recommended profile
Wave Soldering Average Ramp-up Rate~200 °C/s; profile feature
Wave Soldering Heating Rate During Preheat1-2 °C/s typical, 4 °C/s maximum; preheat
Wave Soldering Final Preheat Temperature~130 °C; Ts
Wave Soldering Preheat Time>60 s; 25°C to Ts
Wave Soldering Peak Temperature260 °C; Tp
Wave Soldering Time Within Peak Temperature10 s; tp
Wave Soldering Ramp-down Rate5 °C/s maximum; profile feature
Hand Soldering Iron Temperature360 °C +5°C within 3 s; product rework or sample testing
DIP8 Packing Quantity Per Tube45 pcs/tube; tube 500 mm
DIP8 Packing Quantity Per Box2250 pcs/box; 50 tubes/box
DIP8 Packing Quantity Per Carton22500 pcs/carton; 10 boxes/carton
DIP8-M Packing Quantity Per Tube45 pcs/tube; tube 500 mm
DIP8-M Packing Quantity Per Box2250 pcs/box; 50 tubes/box
DIP8-M Packing Quantity Per Carton22500 pcs/carton; 10 boxes/carton
SMD8 Packing Quantity Per Reel1000 pcs/reel; reel diameter 330 mm
SMD8 Packing Quantity Per Box2000 pcs/box; 2 reels/box
SMD8 Packing Quantity Per Carton20000 pcs/carton; 10 boxes/carton
SMD8 Guard Band200 mm minimum; tape and reel packing
Document Validityvalid until Dec 31, 2026; datasheet attention note
Datasheet Statusrequest_only

Product Overview

The optocoupler provides 5000 Vrms isolation and a rated impulse isolation voltage of 6000 V. Current transfer ratio is specified from 50% to 600% at IF=5 mA and VCE=5 V, with rank options A, B, C, D, and no-mark ranges documented under the same test condition.

Input ratings include 50 mA forward current, 1 A peak forward current under pulse conditions, 6 V reverse voltage, and 70 mW input power dissipation. Output ratings include 50 mA collector current, 80 V collector-emitter voltage, 7 V emitter-collector voltage, and 150 mW collector power dissipation.

The part supports operating temperatures from -55 to +110 °C and storage from -55 to +125 °C. Assembly guidance includes 260 °C reflow peak temperature, 260 °C wave soldering peak temperature, and 360 °C +5 °C hand soldering within 3 seconds.

Key Features

  • Phototransistor optocoupler in DIP8, DIP8-M, and SMD8 packages
  • 50-600% CTR at IF=5 mA and VCE=5 V
  • 5000 Vrms input-to-output isolation voltage rating
  • 80 V minimum collector-emitter breakdown voltage
  • -55 to +110 °C operating temperature range
  • UL 94V-0 molding compound flammability rating
  • Typ 80 kHz cut-off frequency at specified load
  • Typ 4 us turn-on and typ 3 us turn-off
  • 260 °C reflow and wave soldering peak temperature
  • SMD8 tape-and-reel packing supports 1000 pcs per reel

Typical Applications

  • Isolated signal transfer
  • Phototransistor output coupling
  • Logic-to-transistor interface isolation
  • Industrial control input isolation
  • Power supply feedback isolation
  • PCB assemblies using DIP8 packages
  • PCB assemblies using SMD8 tape-and-reel

Procurement Notes

When requesting a quote for XL827S-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.

FAQ

What type of component is XL827S-G?

XL827S-G is listed as a XINGLIGHT phototransistor optocoupler in the LED category. The extracted package cases are DIP8, DIP8-M, and SMD8.

What isolation voltage is specified for XL827S-G?

The datasheet facts specify 5000 Vrms isolation voltage from input to output. Another rating lists 5000 Vrms under 40-60% RH with AC applied for 1 minute.

What CTR range does XL827S-G provide?

The current transfer ratio is specified from 50% to 600% at IF=5 mA and VCE=5 V. Rank options include A, B, C, D, and no-mark ranges.

What package and packing options are documented?

The package cases are DIP8, DIP8-M, and SMD8. DIP8 and DIP8-M use 45 pcs per tube packing, while SMD8 is listed as 1000 pcs per tape-and-reel or reel.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 3, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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