Specifications
| Type | Description |
|---|---|
| Part Number | L314EIR1C |
| Manufacturer | PARA LIGHT ELECTRONICS CO., LTD. |
| Product Type | SMD LED |
| Category | LED |
| Package Case | 3.0 mm lamp package; package dimensions in millimeters, tolerance ±0.25 mm unless otherwise specified; protruded resin under flange 1.5 mm max |
| Manufacturer | PARA LIGHT ELECTRONICS CO., LTD. |
| Part Number | L314EIR1C |
| Device Description | 3.0 mm infrared emitting diode |
| Revision | A / 5 |
| Drawing Number | DS-23-02-0036 |
| Datasheet Date | 2019-02-28 |
| Resin Material | Epoxy Resin |
| Lead Frame Material | Sn plating iron alloy |
| Package Dimension Units | millimeters |
| Package Dimension Tolerance | ±0.25 mm (0.010 in) |
| Protruded Resin Under Flange | 1.5 mm max |
| Dice Material | GaAlAs/GaAlAs |
| Lens Color | Water clear |
| Power Dissipation Per Chip | 180 mW max |
| Reverse Voltage Per Chip | 5 V max |
| Forward Current Per Chip | 100 mA max |
| Peak Forward Current Per Chip | 400 mA max |
| Operating Temperature Range | -25°C to 85°C |
| Storage Temperature Range | -25°C to 85°C |
| Forward Voltage | 1.3 V typ |
| Forward Voltage | 1.5 V min, 1.8 V max |
| Reverse Current | 10 µA max |
| Peak Emission Wavelength | 940 nm typ |
| Half Intensity Angle | 20 deg typ |
| Radiant Intensity | 12 mW/sr typ |
| Radiant Intensity | 60 mW/sr typ |
| Radiant Intensity Bin P | 6 to 8 mW/sr |
| Radiant Intensity Bin Q | 8 to 10 mW/sr |
| Radiant Intensity Bin R | 10 to 12 mW/sr |
| Radiant Intensity Bin S | 12 to 15 mW/sr |
| Radiant Intensity Bin T | 15 to 18 mW/sr |
| Forward Voltage Bin A0 | 1.3 to 1.4 V |
| Forward Voltage Bin A | 1.4 to 1.5 V |
| Forward Voltage Bin B | 1.5 to 1.6 V |
| Forward Voltage Bin C | 1.6 to 1.7 V |
| Forward Voltage Bin D | 1.7 to 1.8 V |
| DIP Soldering Bath Temperature | 260°C |
| Soldering Iron Power | 30 W or smaller |
| Soldering Iron Tip Temperature | 300°C or lower |
| Lead Tinning Alloy | 95.5% tin, 3.5% copper, 0.5% silver |
| Storage Condition | 30°C or less and 70% RH or less |
| ESD Damage Check Criterion | VF > 2.0 V |
| Lead Bend Distance | At least 2 mm away from package |
| Lead Bend Strength | Do not bend lead more than twice |
| Lead Tensile Strength | 1 kg or less acceptable |
| Chemical Cleaning Immersion Time | Within 3 minutes |
| Usable Cleaning Solvents | Freon TE; Isopropyl Alcohol |
| Prohibited Cleaning Solvents | Chlorothene; Thinner; Acetone; Trichloroethylene |
| Datasheet Status | request_only |
Product Overview
L314EIR1C is a 3.0 mm infrared emitting diode from PARA LIGHT ELECTRONICS CO., LTD. The datasheet identifies the component as an LED infrared emitting diode with GaAlAs/GaAlAs dice, a water clear lens, epoxy resin construction, and a Sn plating iron alloy lead frame.
Electrical limits at Ta=25°C include 180 mW maximum power dissipation per chip, 5 V maximum reverse voltage per chip, 100 mA maximum forward current per chip, and 400 mA maximum peak forward current per chip under the specified pulse conditions. Forward voltage is 1.3 V typical at IF=20 mA, and 1.5 V minimum to 1.8 V maximum at IF=100 mA.
Optical characteristics include a 940 nm typical peak emission wavelength, 20 deg typical half intensity angle, 12 mW/sr typical radiant intensity at IF=20 mA, and 60 mW/sr typical radiant intensity at IF=100 mA. Assembly notes specify 260°C DIP soldering within 5 seconds, soldering iron limits, lead bend restrictions, cleaning solvent compatibility, and storage at 30°C or less and 70% RH or less after shipment.
Key Features
- 3.0 mm infrared emitting diode package
- GaAlAs/GaAlAs dice material
- Water clear epoxy resin lens
- 940 nm typical peak emission wavelength
- 20 deg typical half intensity angle
- 12 mW/sr radiant intensity at 20 mA
- 60 mW/sr radiant intensity at 100 mA
- 100 mA maximum forward current per chip
- 400 mA maximum peak forward current per chip
- -25°C to 85°C operating temperature range
Typical Applications
- 940 nm infrared emission circuits
- Through-hole LED assemblies
- 20 deg infrared beam designs
- 100 mA IR diode drive circuits
- Water clear lens emitter layouts
- GaAlAs infrared emitter designs
Procurement Notes
When requesting a quote for L314EIR1C, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of LED is L314EIR1C?
L314EIR1C is a 3.0 mm infrared emitting diode from PARA LIGHT ELECTRONICS CO., LTD. The datasheet identifies it as an LED with GaAlAs/GaAlAs dice, epoxy resin construction, and a water clear lens.
What wavelength does L314EIR1C emit?
The specified peak emission wavelength is 940 nm typical at IF=20 mA and Ta=25°C. The datasheet also lists a 20 deg typical half intensity angle under the same operating condition.
What are the forward voltage specifications?
Forward voltage is specified as 1.3 V typical at IF=20 mA and Ta=25°C. At IF=100 mA and Ta=25°C, the datasheet gives a forward voltage range of 1.5 V minimum to 1.8 V maximum.
What soldering limits are specified for this diode?
DIP soldering bath temperature is 260°C with immersion time within 5 seconds for one time. For soldering iron use, the datasheet specifies 30 W or smaller and a tip temperature of 300°C or lower within 5 seconds.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 31, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.