Specifications
| Type | Description |
|---|---|
| Part Number | L329EIR1C-UEI |
| Manufacturer | Para Light Electronics Co., Ltd. |
| Product Type | SMD LED |
| Category | LED |
| Component Type | LED |
| Package / Case | 3.0 mm through-hole infrared LED lamp; package dimensions in mm, tolerance ±0.25 mm unless otherwise specified |
| Device Description | 3.0 mm infrared emitting diode |
| Dice Material | GaAlAs/GaAs |
| Lens Color | Water clear |
| Resin Material | Epoxy resin |
| Lead Frame Material | Sn plating iron alloy |
| Power Dissipation Per Chip | 150 mW max at Ta=25°C |
| Reverse Voltage Per Chip | 5 V max at Ta=25°C |
| Forward Current Per Chip | 100 mA max at Ta=25°C |
| Peak Forward Current | 1 A max; F=1 kHz, duty=0.1; pulse width ≤10 ms, 10% duty cycle, Ta=25°C |
| Operating Temperature Range | -40°C to 85°C |
| Storage Temperature Range | -40°C to 85°C |
| Forward Voltage | 1.1 V min, 1.3 V max at IF=20 mA, Ta=25°C |
| Forward Voltage | 1.4 V min, 1.6 V max at IF=100 mA, Ta=25°C |
| Reverse Current | 10 µA max at VR=5 V, Ta=25°C |
| Peak Emission Wavelength | 940 nm typ at IF=20 mA, Ta=25°C |
| Half Intensity Angle | 30° min, 40° typ, 50° max at IF=20 mA, Ta=25°C |
| Radiant Intensity | 12 mW/sr typ at IF=20 mA, Ta=25°C |
| Radiant Intensity | 60 mW/sr typ at IF=100 mA, Ta=25°C |
| Junction Capacitance | 50 pF typ at VR=0 V, f=1 MHz, Ta=25°C |
| Switch Time | tr/tf = 1/1 µs typ at IFP=100 mA, f=1 kHz, tp/T=1%, Ta=25°C |
| Radiant Intensity Bin R | 10 to 12 mW/sr; IE at 20 mA; bin tolerance ±15% |
| Radiant Intensity Bin S | 12 to 15 mW/sr; IE at 20 mA; bin tolerance ±15% |
| Forward Voltage Bin A0 | 1.1 to 1.2 V; VF at 20 mA; bin tolerance ±0.1 V |
| Forward Voltage Bin A | 1.2 to 1.3 V; VF at 20 mA; bin tolerance ±0.1 V |
| Soldering Dip Condition | 260°C bath temperature, within 5 s, 1 time; solder no closer than 3 mm from package base |
| Soldering Iron Condition | 30 W or smaller; tip temperature 330°C or lower; within 3 s |
| Storage Condition | 30°C or less, 70% RH or less, storage life limit 1 year after shipment from PARA |
| Lead Bending Distance | At least 2 mm away from package |
| Lead Bend Strength | Do not bend lead more than twice |
| Lead Tensile Strength | 1 kg or less acceptable at room temperature |
| Chemical Cleaning Time | Within 3 minutes for immersion at room temperature when washing is required |
| RoHS Compliance | RoHS compliant |
| Pb-Free Status | Pb free product |
| Datasheet Status | request_only |
Product Overview
The L329EIR1C-UEI is a 3.0 mm infrared emitting diode manufactured by Para Light Electronics Co., Ltd. It is supplied as a through-hole infrared LED lamp with package dimensions specified in millimeters and a general tolerance of ±0.25 mm unless otherwise specified. The device uses GaAlAs/GaAs dice with a water clear lens, epoxy resin package material, and a Sn plating iron alloy lead frame.
At Ta=25°C, the diode is rated for 150 mW maximum power dissipation per chip, 100 mA maximum forward current per chip, 5 V maximum reverse voltage per chip, and 1 A maximum peak forward current under the stated pulsed condition. Forward voltage is specified as 1.1 V minimum to 1.3 V maximum at 20 mA, and 1.4 V minimum to 1.6 V maximum at 100 mA.
Optical characteristics include a 940 nm typical peak emission wavelength, 12 mW/sr typical radiant intensity at 20 mA, 60 mW/sr typical radiant intensity at 100 mA, and a 30° minimum, 40° typical, 50° maximum half intensity angle. Assembly guidance covers dip soldering, manual soldering, lead bending, tensile strength, storage, and cleaning limits.
Key Features
- 3.0 mm through-hole infrared emitting diode package
- GaAlAs/GaAs dice with water clear lens
- 940 nm typical peak emission wavelength at 20 mA
- 12 mW/sr typical radiant intensity at 20 mA
- 60 mW/sr typical radiant intensity at 100 mA
- 30° to 50° half intensity angle range
- 100 mA maximum forward current per chip
- 1 A maximum pulsed peak forward current
- -40°C to 85°C operating temperature range
- RoHS compliant and Pb free product
Typical Applications
- 940 nm infrared emission designs
- Through-hole infrared emitter assemblies
- Water clear infrared LED indicators
- Pulsed infrared drive circuits
- 20 mA optical output designs
- 100 mA infrared emitter circuits
Procurement Notes
When requesting a quote for L329EIR1C-UEI, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of LED is the L329EIR1C-UEI?
The L329EIR1C-UEI is an infrared emitting diode from Para Light Electronics Co., Ltd. The datasheet describes it as a 3.0 mm infrared emitting diode in the LED category.
What wavelength does the L329EIR1C-UEI emit?
The datasheet specifies a typical peak emission wavelength of 940 nm when measured at IF=20 mA and Ta=25°C.
What are the forward voltage ratings for this part?
Forward voltage is specified as 1.1 V minimum to 1.3 V maximum at IF=20 mA, and 1.4 V minimum to 1.6 V maximum at IF=100 mA, both at Ta=25°C.
What soldering limits apply to the L329EIR1C-UEI?
For dip soldering, the datasheet specifies a 260°C bath temperature within 5 seconds for one time, with solder no closer than 3 mm from the package base. Manual soldering is limited to 30 W or smaller, 330°C tip temperature or lower, within 3 seconds.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 31, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.