L32ROPT1D1 SMD Flat Top Phototransistor

STMicroelectronics LED — specifications, applications, sourcing support and RFQ.

L32ROPT1D1 SMD Flat Top Phototransistor

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
L32ROPT1D1
Manufacturer
STMicroelectronics
Package
Miniature SMD package, 0.6 mm height flat top, black molded lens; package dimensions in mm with tolerances ±0.1 mm
Category
LED
Product Type
SMD LED

Quick Sourcing Note

L32ROPT1D1 from STMicroelectronics is listed in the LED category and described by the source data as an SMD flat top phototransistor. The device uses a miniature SMD package with a 0.6 mm height flat top and black molded flat top view lens. It is spectrally matched to visible and infrared emitting diodes, with a 730-1100 nm spectral bandwidth and 940 nm typical peak sensitivity. Key ratings include 30 V collector-emitter voltage, 5 V emitter-collector voltage, 20 mA collector current, 75 mW power dissipation, and -40 to +85 °C operating temperature.

Specifications

TypeDescription
Part NumberL32ROPT1D1
ManufacturerSTMicroelectronics
Product TypeSMD LED
CategoryLED
Package CaseMiniature SMD package, 0.6 mm height flat top, black molded lens; package dimensions in mm with tolerances ±0.1 mm
Component TypeSensor
Factory Part NumberZPT-1608B-06-Z4
Product Description0.6 mm height flat top phototransistor
Package TypeMiniature SMD package
Package ConditionMolded in black with flat top view lens
Optical MatchingSpectrally matched to visible and infrared emitting diode
Response Time FeatureFast response time
Photo Sensitivity FeatureHigh photo sensitivity
Junction Capacitance FeatureSmall junction capacitance
RoHS ComplianceRoHS compliant version
REACH ComplianceCompliance with EU REACH
Rank A1 On State Collector Current0.27-0.66 mA, VCE=5 V, Ee=1 mW/cm²
Rank A2 On State Collector Current0.54-1.00 mA, VCE=5 V, Ee=1 mW/cm²
Collector-Emitter Voltage30 V, absolute maximum rating at Ta=25°C
Emitter-Collector Voltage5 V, absolute maximum rating at Ta=25°C
Collector Current20 mA, absolute maximum rating at Ta=25°C
Operating Temperature-40 to +85 °C
Storage Temperature-40 to +100 °C
Soldering Temperature260 °C, soldering time 5 seconds
Power Dissipation75 mW at or below 25°C free air temperature
Range of Spectral Bandwidth730-1100 nm at Ta=25°C
Wavelength of Peak Sensitivity940 nm typ at Ta=25°C
Collector-Emitter Breakdown Voltage30 V min, IC=100 µA, Ee=0 mW/cm², Ta=25°C
Emitter-Collector Breakdown Voltage5 V min, IE=100 µA, Ee=0 mW/cm², Ta=25°C
Collector-Emitter Saturation Voltage0.4 V max, IC=2 mA, Ee=1 mW/cm², Ta=25°C
Collector Dark Current100 nA max, VCE=20 V, Ee=0 mW/cm², Ta=25°C
On State Collector Current0.27 mA min, 0.65 mA typ, VCE=5 V, Ee=1 mW/cm², Ta=25°C
Tape Loaded Quantity4000 pcs/reel
Datasheet Statusrequest_only

Product Overview

L32ROPT1D1 is an STMicroelectronics LED-category device described in the extracted manufacturer datasheet facts as an SMD flat top phototransistor. The factory part number listed in the source is ZPT-1608B-06-Z4, and the device description identifies it as a 0.6 mm height flat top phototransistor.

The package is a miniature SMD package molded in black with a flat top view lens. Package dimensions are specified in millimeters with ±0.1 mm tolerances, supporting compact surface-mount assembly. Tape loading is specified as 4000 pieces per reel.

Optically, the device is spectrally matched to visible and infrared emitting diodes. Its specified spectral bandwidth is 730-1100 nm, with 940 nm typical wavelength of peak sensitivity. Electrical limits include 30 V collector-emitter voltage, 5 V emitter-collector voltage, 20 mA collector current, 0.4 V maximum collector-emitter saturation voltage, and 100 nA maximum collector dark current under the stated test conditions.

Key Features

  • 0.6 mm height flat top phototransistor
  • Miniature SMD package with black molded lens
  • Spectrally matched to visible and infrared emitting diodes
  • Fast response time stated in feature list
  • High photo sensitivity stated in feature list
  • Small junction capacitance stated in feature list
  • RoHS compliant version listed in datasheet facts
  • Compliance with EU REACH listed in datasheet facts
  • 730-1100 nm spectral bandwidth at Ta=25°C
  • 940 nm typical wavelength of peak sensitivity
  • 4000 pieces per reel tape loading

Typical Applications

  • Visible diode sensing
  • Infrared diode sensing
  • Compact surface-mount optical sensing
  • 940 nm optical detection
  • Fast response photo detection
  • Low-profile sensor assemblies

Procurement Notes

When requesting a quote for L32ROPT1D1, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.

FAQ

What product type is L32ROPT1D1?

L32ROPT1D1 is described in the extracted datasheet facts as an SMD flat top phototransistor. The source also identifies the device description as a 0.6 mm height flat top phototransistor.

What package is specified for L32ROPT1D1?

The package is specified as a miniature SMD package molded in black with a flat top view lens. The package case information also notes a 0.6 mm height flat top and ±0.1 mm dimensional tolerances.

What optical wavelength range does L32ROPT1D1 cover?

The extracted electrical-optical facts list a spectral bandwidth range of 730-1100 nm at Ta=25°C. The wavelength of peak sensitivity is specified as 940 nm typical under the same ambient temperature condition.

What are the main absolute maximum ratings?

The extracted ratings include 30 V collector-emitter voltage, 5 V emitter-collector voltage, 20 mA collector current, 75 mW power dissipation, -40 to +85 °C operating temperature, and -40 to +100 °C storage temperature.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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