AT24C08N Two-Wire Serial EEPROM

ATMEL Memory — specifications, applications, sourcing support and RFQ.

AT24C08N Two-Wire Serial EEPROM

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
AT24C08N
Manufacturer
ATMEL
Package
8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP MLP 2x3, 5-lead SOT23, 8-lead TSSOP, 8-ball dBGA2
Category
Memory & Storage
Product Type
EEPROM

Quick Sourcing Note

AT24C08N fromATMEL is a Memory device classified as a two-wire serial EEPROM. It provides 8192 bits organized as 1024 x 8, with 64 internal pages of 16 bytes each and a 10-bit data word address. The device supports SCL and SDA two-wire serial operation, with a bidirectional open-drain SDA pin. Operation spans recommended supply ranges from 1.8 V to 5.5 V depending on mode, with clock operation up to 100 kHz at 1.8 V to 5.5 V and up to 400 kHz at higher supply ranges. Package options include PDIP, SOIC, MLP, SOT23, TSSOP, and dBGA2 formats.

Specifications

TypeDescription
Part NumberAT24C08N
ManufacturerATMEL
Product TypeEEPROM
CategoryMemory & Storage
Package/Case8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP MLP 2x3, 5-lead SOT23, 8-lead TSSOP, 8-ball dBGA2
Memory Density8192 bits; condition: AT24C08A family member
Memory Organization1024 x 8; condition: 8K serial EEPROM
Internal Page Organization64 pages of 16 bytes each; condition: AT24C08A
Random Address Width10-bit data word address; condition: AT24C08A
Serial InterfaceTwo-wire serial interface; condition: SCL and SDA pins
SDA Pin TypeBidirectional open-drain; condition: may be wire-ORed with other open-drain/open-collector devices
Clock Frequency100 kHz max; condition: VCC = 1.8 V to 5.5 V
Clock Frequency400 kHz max; condition: VCC = 2.7 V to 5.5 V or 5.0 V operation
Supply Voltage1.8 V min, 5.5 V max; condition: VCC1 recommended operating range
Supply Voltage2.7 V min, 5.5 V max; condition: VCC2 recommended operating range
Supply Voltage4.5 V min, 5.5 V max; condition: VCC3 recommended operating range
Read Supply Current0.4 mA typ, 1.0 mA max; condition: VCC = 5.0 V, read at 100 kHz
Write Supply Current2.0 mA typ, 3.0 mA max; condition: VCC = 5.0 V, write at 100 kHz
Standby Current0.6 µA typ, 3.0 µA max; condition: VCC = 1.8 V, VIN = VCC or VSS
Standby Current1.4 µA typ, 4.0 µA max; condition: VCC = 2.5 V, VIN = VCC or VSS
Standby Current1.6 µA typ, 4.0 µA max; condition: VCC = 2.7 V, VIN = VCC or VSS
Standby Current8.0 µA typ, 18.0 µA max; condition: VCC = 5.0 V, VIN = VCC or VSS
Input Leakage Current0.10 µA typ, 3.0 µA max; condition: VIN = VCC or VSS
Output Leakage Current0.05 µA typ, 3.0 µA max; condition: VOUT = VCC or VSS
Input Low Voltage-0.6 V min, 0.3 x VCC max; condition: reference only, not tested
Input High Voltage0.7 x VCC min, VCC + 0.5 V max; condition: reference only, not tested
Output Low Voltage0.4 V max; condition: VCC = 3.0 V, IOL = 2.1 mA
Output Low Voltage0.2 V max; condition: VCC = 1.8 V, IOL = 0.15 mA
Input/Output Capacitance8 pF max; condition: SDA, TA = 25°C, f = 1.0 MHz, VCC = 1.8 V, VI/O = 0 V; characterized, not 100% tested
Input Capacitance6 pF max; condition: A0, A1, A2, SCL; TA = 25°C, f = 1.0 MHz, VCC = 1.8 V, VIN = 0 V; characterized, not 100% tested
Clock Pulse Width Low4.7 µs min; condition: 1.8 V operation
Clock Pulse Width Low1.2 µs min; condition: 2.7 V or 5.0 V operation
Clock Pulse Width High4.0 µs min; condition: 1.8 V operation
Clock Pulse Width High0.6 µs min; condition: 2.7 V or 5.0 V operation
Noise Suppression Time100 ns max; condition: 1.8 V operation; characterized
Noise Suppression Time50 ns max; condition: 2.7 V or 5.0 V operation; characterized
Clock Low to Data Out Valid0.1 µs min, 4.5 µs max; condition: 1.8 V operation
Clock Low to Data Out Valid0.1 µs min, 0.9 µs max; condition: 2.7 V or 5.0 V operation
Bus Free Time Before New Transmission4.7 µs min; condition: 1.8 V operation; characterized
Bus Free Time Before New Transmission1.2 µs min; condition: 2.7 V or 5.0 V operation; characterized
Start Hold Time4.0 µs min; condition: 1.8 V operation
Start Hold Time0.6 µs min; condition: 2.7 V or 5.0 V operation
Start Setup Time4.7 µs min; condition: 1.8 V operation
Start Setup Time0.6 µs min; condition: 2.7 V or 5.0 V operation
Data In Hold Time0 µs min; condition: 1.8 V and 2.7 V/5.0 V operation
Data In Setup Time200 ns min; condition: 1.8 V operation
Data In Setup Time100 ns min; condition: 2.7 V or 5.0 V operation
Input Rise Time1.0 µs max; condition: 1.8 V operation; characterized
Input Rise Time0.3 µs max; condition: 2.7 V or 5.0 V operation; characterized
Input Fall Time300 ns max; condition: 1.8 V and 2.7 V/5.0 V operation; characterized
Stop Setup Time4.7 µs min; condition: 1.8 V operation
Stop Setup Time0.6 µs min; condition: 2.7 V or 5.0 V operation
Data Out Hold Time100 ns min; condition: 1.8 V operation
Data Out Hold Time50 ns min; condition: 2.7 V or 5.0 V operation
Write Cycle Time5 ms max; condition: 1.8 V and 2.7 V/5.0 V operation
Write Endurance1,000,000 cycles; condition: 5.0 V, 25°C, byte mode; characterized
Data Retention100 years; condition: high-reliability feature
Page Write Size16 bytes; condition: AT24C08A page write
Partial Page WritesAllowed; condition: serial EEPROM write mode
Write Protect FunctionFull 8K array protected when WP = VCC; normal read/write when WP = GND; condition: AT24C08A
Device Address InputsA2 used; A1 and A0 are no connect; condition: AT24C08A hardwire addressing
Maximum Devices Per Bus2 devices; condition: AT24C08A uses only A2 hardwire address input
Operating Temperature Range-40°C to +85°C; condition: recommended operating range for DC and AC characteristics
Absolute Maximum Operating Temperature-55°C to +125°C; condition: absolute maximum ratings
Storage Temperature Range-65°C to +150°C; condition: absolute maximum ratings
Voltage on Any Pin-1.0 V to +7.0 V; condition: with respect to ground; absolute maximum rating
Maximum Operating Voltage6.25 V; condition: absolute maximum rating
DC Output Current5.0 mA; condition: absolute maximum rating
Datasheet Statusrequest_only

Product Overview

AT24C08N is a ATMEL two-wire serial EEPROM in the Memory category. The device provides 8192 bits of nonvolatile storage organized as 1024 x 8, with 64 pages of 16 bytes each. Random addressing uses a 10-bit data word address, and page write operation supports 16-byte page writes with partial page writes allowed.

The serial interface uses SCL and SDA pins. SDA is a bidirectional open-drain pin that may be wire-ORed with other open-drain or open-collector devices. Clock frequency is specified to 100 kHz maximum across the 1.8 V to 5.5 V range and 400 kHz maximum for 2.7 V to 5.5 V or 5.0 V operation.

Package options include 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP MLP 2x3, 5-lead SOT23, 8-lead TSSOP, and 8-ball dBGA2. The device is suited to compact serial memory designs requiring low standby current, write protection, page write capability, and operation from -40°C to +85°C.

Key Features

  • 8192-bit serial EEPROM organized as 1024 x 8
  • 64 internal pages with 16 bytes per page
  • Two-wire serial interface using SCL and SDA pins
  • Bidirectional open-drain SDA supports wired bus connection
  • 100 kHz operation across 1.8 V to 5.5 V
  • 400 kHz operation at 2.7 V to 5.5 V
  • Write cycle time specified to 5 ms maximum
  • Write endurance characterized to 1,000,000 cycles
  • Data retention specified as 100 years
  • Write protect covers full 8K array when WP equals VCC

Typical Applications

  • Board configuration storage
  • Serial parameter memory
  • Device identification storage
  • Calibration data storage
  • Low-current embedded memory
  • Two-wire bus memory expansion
  • Protected EEPROM data storage

Procurement Notes

When requesting a quote for AT24C08N, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.

FAQ

What memory density does AT24C08N provide?

AT24C08N provides 8192 bits of EEPROM memory. The extracted organization is 1024 x 8, with 64 internal pages of 16 bytes each for the AT24C08A family member.

What serial interface does AT24C08N use?

AT24C08N uses a two-wire serial interface with SCL and SDA pins. The SDA pin is bidirectional open-drain and may be wire-ORed with other open-drain or open-collector devices.

What clock rates are specified for AT24C08N?

The clock frequency is 100 kHz maximum when VCC is 1.8 V to 5.5 V. For VCC from 2.7 V to 5.5 V or 5.0 V operation, the maximum clock frequency is 400 kHz.

How does write protection work on AT24C08N?

For the AT24C08A configuration, the full 8K array is protected when WP is connected to VCC. Normal read and write operation is available when WP is connected to GND.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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