Specifications
| Type | Description |
|---|---|
| Part Number | EL_DPC-0000569_EL817H-G_Series_Datasheet_rev2 |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin DIP package; standard DIP-4, wide-lead bend M option with 0.4 inch spacing, S1/S2 surface mount lead form options |
| Device Description | Infrared emitting diode optically coupled to phototransistor detector; EL817H-G Series |
| Pin 1 Function | Anode; pin configuration |
| Pin 2 Function | Cathode; pin configuration |
| Pin 3 Function | Emitter; pin configuration |
| Pin 4 Function | Collector; pin configuration |
| Creepage Distance | >7.62 mm between input and output |
| Forward Current | 50 mA; absolute maximum rating, Ta=25°C |
| Peak Forward Current | 1 A; absolute maximum rating, 1 µs pulse, Ta=25°C |
| Reverse Voltage | 6 V; absolute maximum rating, Ta=25°C |
| Input Power Dissipation | 100 mW; absolute maximum rating, Ta=25°C |
| Output Power Dissipation | 150 mW; absolute maximum rating, Ta=25°C |
| Collector Current | 50 mA; absolute maximum rating, Ta=25°C |
| Collector-Emitter Voltage | 80 V; absolute maximum rating, Ta=25°C |
| Emitter-Collector Voltage | 7 V; absolute maximum rating, Ta=25°C |
| Total Power Dissipation | 200 mW; absolute maximum rating, Ta=25°C |
| Isolation Voltage | 5000 Vrms; AC for 1 minute, RH=40-60%, pins 1/2 shorted and pins 3/4 shorted |
| Operating Temperature | -55 to 125 °C; absolute maximum rating |
| Storage Temperature | -55 to 150 °C; absolute maximum rating |
| Soldering Temperature | 260 °C for 10 seconds |
| Forward Voltage | Typ 1.2 V, Max 1.4 V; IF=10 mA, Ta=25°C |
| Reverse Current | Max 10 µA; VR=5 V, Ta=25°C |
| Input Capacitance | Typ 30 pF, Max 250 pF; V=0, f=1 kHz, Ta=25°C |
| Collector-Emitter Dark Current | Max 200 nA; VCE=48 V, IF=0 mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | Min 80 V; IC=0.1 mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | Min 7 V; IE=0.1 mA, Ta=25°C |
| Current Transfer Ratio | 50-400%; EL817H, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank A | 80-160%; EL817HA, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank B | 130-260%; EL817HB, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank C | 200-400%; EL817HC, IF=5 mA, VCE=5 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | Max 0.35 V; IF=20 mA, IC=1 mA, Ta=25°C |
| Isolation Resistance | Min 5×10^10 Ω; VIO=500 Vdc, RH=40-60%, Ta=25°C |
| Floating Capacitance | Typ 0.6 pF, Max 1.0 pF; VIO=0, f=1 MHz, Ta=25°C |
| Cut-off Frequency | Typ 80 kHz; VCE=5 V, IC=2 mA, RL=100 Ω, -3 dB, Ta=25°C |
| Rise Time | Typ 6 µs, Max 18 µs; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall Time | Typ 8 µs, Max 18 µs; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard DIP Packing Quantity | 100 units per tube; no lead form option |
| Wide Lead Bend Packing Quantity | 100 units per tube; M option, 0.4 inch spacing |
| S1 Tape and Reel Packing Quantity | 1500 units per reel; S1 surface mount low profile, TU or TD option |
| S2 Tape and Reel Packing Quantity | 2000 units per reel; S2 surface mount low profile, TU or TD option |
| Reflow Preheat Temperature Minimum | 150 °C; maximum body case temperature profile, IPC/JEDEC J-STD-020D reference |
| Reflow Preheat Temperature Maximum | 200 °C; maximum body case temperature profile, IPC/JEDEC J-STD-020D reference |
| Reflow Preheat Time | 60-120 seconds; time from Tsmin to Tsmax |
| Reflow Peak Temperature | 260 °C; maximum body case temperature profile |
| Reflow Cycles | 3 times; maximum body case temperature profile |
| Datasheet Source | Manufacturer technical datasheet |
| Datasheet Status | request_only |
Product Overview
The EL_DPC-0000569_EL817H-G_Series_Datasheet_rev2 is an EVERLIGHT phototransistor photocoupler in the LED category. Its internal structure is an infrared emitting diode optically coupled to a phototransistor detector, with pin 1 as anode, pin 2 as cathode, pin 3 as emitter, and pin 4 as collector.
The device is specified for 5000 Vrms isolation voltage for 1 minute with input and output pins shorted by side, and it provides greater than 7.62 mm creepage distance between input and output. Absolute maximum ratings include 50 mA forward current, 1 A peak forward current for a 1 µs pulse, 80 V collector-emitter voltage, 50 mA collector current, and 200 mW total power dissipation at Ta=25°C.
Package and assembly options include standard DIP-4, M wide-lead bend with 0.4 inch spacing, and S1/S2 surface mount lead forms. Packing options include 100 units per tube for standard DIP or M option, 1500 units per reel for S1, and 2000 units per reel for S2. Reflow profile facts include 150 to 200 °C preheat, 60 to 120 seconds preheat time, 260 °C peak temperature, and three reflow cycles.
Key Features
- Infrared LED optically coupled to phototransistor detector
- 4-pin DIP package with collector and emitter output pins
- Creepage distance greater than 7.62 mm between input and output
- 5000 Vrms isolation voltage for one minute
- 50 mA forward current absolute maximum rating
- 80 V collector-emitter voltage absolute maximum rating
- CTR range 50-400% for EL817H
- Ranked CTR options A, B, and C
- Typical 80 kHz cut-off frequency
- S1 and S2 surface mount lead form options
- 260 °C reflow peak temperature profile
- Three reflow cycles maximum body case profile
Typical Applications
- Input-to-output isolation circuits
- Phototransistor signal coupling
- LED-to-transistor interface circuits
- DIP-4 isolated interfaces
- Surface mount photocoupler assemblies
- CTR-ranked isolation designs
- 80 V collector-emitter output circuits
Procurement Notes
When requesting a quote for EL_DPC-0000569_EL817H-G_Series_Datasheet_rev2, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is this EVERLIGHT EL817H-G Series part?
It is a phototransistor photocoupler. The datasheet describes the device as an infrared emitting diode optically coupled to a phototransistor detector, with anode and cathode input pins and emitter and collector output pins.
What isolation rating is specified for this photocoupler?
The extracted datasheet facts specify 5000 Vrms isolation voltage for AC applied for 1 minute at RH=40-60%, with pins 1/2 shorted together and pins 3/4 shorted together.
Which package and lead form options are listed?
The series is listed in a 4-pin DIP package. Options include standard DIP-4, an M wide-lead bend option with 0.4 inch spacing, and S1/S2 surface mount low-profile lead forms.
What current transfer ratio ranges are available?
For EL817H, the current transfer ratio is 50-400% at IF=5 mA, VCE=5 V, and Ta=25°C. Ranked versions include EL817HA at 80-160%, EL817HB at 130-260%, and EL817HC at 200-400%.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.