Specifications
| Type | Description |
|---|---|
| Part Number | LM5111 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | SOIC-8 5.00 mm x 6.00 mm; MSOP-PowerPAD-8 3.00 mm x 4.90 mm |
| Driver Channels | 2 independent channels; condition: dual gate driver |
| MOSFET Drive Type | Drives two N-channel MOSFETs; condition: independent outputs |
| Peak Sink Current | 5 A; condition: OUTA/OUTB = VCC/2, 200-ns pulsed current |
| Peak Source Current | 3 A; condition: OUTA/OUTB = VCC/2, 200-ns pulsed current |
| Output Voltage Swing | VCC to VEE; condition: OUT_A and OUT_B driver outputs |
| Supply Operating Range | 3.5-14 V; condition: VCC - VEE |
| Absolute Maximum Supply Voltage | -0.3 to 15 V; condition: VCC to VEE |
| Absolute Maximum Input Voltage | -0.3 to 15 V; condition: IN to VEE |
| Maximum Junction Temperature | 150 °C; condition: absolute maximum rating |
| Storage Temperature Range | -55 to 150 °C; condition: absolute maximum rating |
| Operating Junction Temperature | 125 °C max; condition: recommended operating conditions |
| UVLO Rising Threshold | 2.3 V min, 2.9 V typ, 3.5 V max; condition: VCC - VEE rising |
| UVLO Hysteresis | 230 mV typ; condition: VCC undervoltage lockout hysteresis |
| Supply Current LM5111-1 | 1 mA typ, 2 mA max; condition: IN_A = IN_B = 0 V |
| Supply Current LM5111-2 | 1 mA typ, 2 mA max; condition: IN_A = IN_B = VCC |
| Supply Current LM5111-3 | 1 mA typ, 2 mA max; condition: IN_A = VCC, IN_B = 0 V |
| Logic High Input Voltage | 2.2 V min; condition: control inputs |
| Logic Low Input Voltage | 0.8 V max; condition: control inputs |
| Input High Threshold | 1.3 V min, 1.75 V typ, 2.2 V max; condition: control inputs |
| Input Low Threshold | 0.8 V min, 1.35 V typ, 2.0 V max; condition: control inputs |
| Input Hysteresis | 400 mV typ; condition: control inputs |
| Input Current Low | -1 µA min, 0.1 µA typ, 1 µA max; condition: IN_A = IN_B = VCC, LM5111-1/-2/-3 |
| Input Current High LM5111-3 | 10 µA min, 18 µA typ, 25 µA max; condition: IN_B = VCC |
| Input Current High LM5111-2 | -1 µA min, 0.1 µA typ, 1 µA max; condition: IN_A = IN_B = VCC |
| Output Resistance High | 30 Ω typ, 50 Ω max; condition: IOUT = -10 mA; MOS device only |
| Output Resistance Low | 1.4 Ω typ, 2.5 Ω max; condition: IOUT = +10 mA; MOS device only |
| Propagation Delay Low-to-High | 25 ns typ, 40 ns max; condition: input rising, IN to OUT, CLOAD = 2 nF |
| Propagation Delay High-to-Low | 25 ns typ, 40 ns max; condition: input falling, IN to OUT, CLOAD = 2 nF |
| Rise Time | 14 ns typ, 25 ns max; condition: CLOAD = 2 nF |
| Fall Time | 12 ns typ, 25 ns max; condition: CLOAD = 2 nF |
| ESD Rating | 2000 V; condition: human-body model, ANSI/ESDA/JEDEC JS-001 |
| Latch-Up Protection | 500 mA; condition: AEC-Q100 method 004, TJ = 150 °C |
| Thermal Resistance Junction-to-Ambient SOIC-8 | 112.2 °C/W; condition: thermal information table |
| Thermal Resistance Junction-to-Ambient MSOP-PowerPAD-8 | 50.7 °C/W; condition: thermal information table |
| Thermal Resistance Junction-to-Case Top SOIC-8 | 54.6 °C/W |
| Thermal Resistance Junction-to-Case Top MSOP-PowerPAD-8 | 56.6 °C/W |
| Thermal Resistance Junction-to-Board SOIC-8 | 53.1 °C/W |
| Thermal Resistance Junction-to-Board MSOP-PowerPAD-8 | 35.9 °C/W |
| Thermal Resistance Junction-to-Case Bottom MSOP-PowerPAD-8 | 4.4 °C/W |
| Configuration Option LM5111-1 | Dual noninverting outputs; condition: A output noninverting low in UVLO; B output noninverting low in UVLO |
| Configuration Option LM5111-2 | Dual inverting outputs; condition: A output inverting low in UVLO; B output inverting low in UVLO |
| Configuration Option LM5111-3 | Inverting and noninverting outputs; condition: A output inverting low in UVLO; B output noninverting low in UVLO |
| Configuration Option LM5111-4 | PFET/NFET drive configuration; condition: A output inverting high in UVLO; B output noninverting low in UVLO |
| Datasheet Status | request_only |
Product Overview
The LM5111 is a Texas Instruments dual 5-A gate driver in the Power_Management category. It provides two independent driver channels intended to drive two N-channel MOSFETs, with driver outputs specified to swing from VCC to VEE. The recommended VCC-to-VEE supply operating range is 3.5-14 V, with undervoltage lockout rising threshold specified at 2.3 V minimum, 2.9 V typical, and 3.5 V maximum.
Output drive capability is specified as 5 A peak sink current and 3 A peak source current when OUTA or OUTB is at VCC/2 with 200 ns pulsed current. Dynamic behavior includes 25 ns typical low-to-high and high-to-low propagation delays, 14 ns typical rise time, and 12 ns typical fall time with CLOAD = 2 nF.
Package choices are SOIC-8 5.00 mm x 6.00 mm and MSOP-PowerPAD-8 3.00 mm x 4.90 mm. Configuration variants include dual noninverting outputs, dual inverting outputs, mixed inverting and noninverting outputs, and a PFET/NFET drive configuration.
Key Features
- Two independent gate-driver channels
- Drives two N-channel MOSFETs
- 5 A peak sink current
- 3 A peak source current
- 3.5-14 V supply operating range
- Outputs swing from VCC to VEE
- 25 ns typical propagation delays
- 14 ns typical rise time with 2 nF load
- 12 ns typical fall time with 2 nF load
- UVLO rising threshold 2.9 V typical
- SOIC-8 and MSOP-PowerPAD-8 packages
- Four output configuration options
Typical Applications
- Dual N-channel MOSFET gate drive
- PFET/NFET drive configuration
- Inverting gate-drive channels
- Noninverting gate-drive channels
- Logic-controlled power switching
- Fast 2 nF load driving
Procurement Notes
When requesting a quote for LM5111, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the LM5111?
The LM5111 is a Texas Instruments dual 5-A gate driver in the Power_Management category. It provides two independent driver channels and is specified to drive two N-channel MOSFETs.
What supply range does the LM5111 support?
The recommended VCC-to-VEE operating range is 3.5-14 V. The absolute maximum VCC-to-VEE rating is -0.3 to 15 V, and the UVLO rising threshold is 2.9 V typical.
What are the LM5111 output drive current ratings?
The extracted datasheet facts specify 5 A peak sink current and 3 A peak source current. Both values are under OUTA or OUTB at VCC/2 with 200 ns pulsed current conditions.
Which output configurations are listed for LM5111 variants?
The listed configurations include LM5111-1 dual noninverting outputs, LM5111-2 dual inverting outputs, LM5111-3 inverting and noninverting outputs, and LM5111-4 PFET/NFET drive configuration.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.