Specifications
| Type | Description |
|---|---|
| Part Number | LM5112 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | 6-pin WSON (NGG) 3.00 mm x 3.00 mm; 8-pin MSOP PowerPAD (DGN) 3.00 mm x 3.00 mm |
| Component Type | Power_IC |
| Peak sink current | 7 A; OUT = VCC/2, 200 ns pulsed current |
| Peak source current | 3 A; OUT = VCC/2, 200 ns pulsed current |
| Operating voltage | 3.5 to 14 V; VCC - IN_REF and VCC - VEE |
| Operating voltage over temperature | 3.5 to 14 V; VCC - IN_REF and VCC - VEE; TJ = -40 degC to 125 degC |
| Undervoltage lockout rising threshold | min 2.4 V, typ 3 V, max 3.5 V; VCC - IN_REF |
| Undervoltage hysteresis | typ 230 mV; TJ = -40 degC to 125 degC, VCC = 12 V |
| Supply current | typ 1 mA, max 2 mA; TJ = -40 degC to 125 degC, VCC = 12 V, INB = IN_REF = VEE = 0 V, no load on output |
| Logic high input voltage | min 2.3 V; control inputs |
| Logic low input voltage | max 0.8 V; control inputs |
| Input high threshold | min 1.3 V, typ 1.75 V, max 2.3 V; control inputs |
| Input low threshold | min 0.8 V, typ 1.35 V, max 2 V; control inputs |
| Input hysteresis | typ 400 mV; control inputs |
| Input current low | min -1 uA, typ 0.1 uA, max 1 uA; IN = INB = 0 V |
| Input current high | min -1 uA, typ 0.1 uA, max 1 uA; IN = INB = VCC |
| Output resistance high | typ 30 ohm, max 50 ohm; IOUT = -10 mA; MOS device only |
| Output resistance low | typ 1.4 ohm, max 2.5 ohm; IOUT = 10 mA; MOS device only |
| Propagation delay low-to-high | typ 25 ns, max 40 ns; IN or INB rising, IN to OUT; CLOAD = 2 nF |
| Propagation delay high-to-low | typ 25 ns, max 40 ns; IN or INB falling, IN to OUT; CLOAD = 2 nF |
| Rise time | typ 14 ns; CLOAD = 2 nF |
| Fall time | typ 12 ns; CLOAD = 2 nF |
| Latch-up protection | 500 mA; AEC-Q100 Method 004, TJ = 150 degC |
| Absolute maximum VCC to VEE | -0.3 to 15 V; over operating free-air temperature range unless otherwise noted |
| Absolute maximum VCC to IN_REF | -0.3 to 15 V; over operating free-air temperature range unless otherwise noted |
| Absolute maximum IN/INB to IN_REF | -0.3 to 15 V; over operating free-air temperature range unless otherwise noted |
| Absolute maximum IN_REF to VEE | -0.3 to 5 V; over operating free-air temperature range unless otherwise noted |
| Maximum junction temperature | 150 degC; absolute maximum rating |
| Operating junction temperature | -40 degC to 125 degC; absolute maximum and recommended operating range |
| Storage temperature | -55 degC to 150 degC; Tstg |
| ESD rating | +/-2000 V; human-body model, per ANSI/ESDA/JEDEC JS-001 |
| Junction-to-ambient thermal resistance | 40 degC/W WSON; 53.7 degC/W MSOP PowerPAD; JEDEC thermal metric RthetaJA |
| Junction-to-case top thermal resistance | 50.8 degC/W WSON; 61.1 degC/W MSOP PowerPAD; JEDEC thermal metric RthetaJC(top) |
| Junction-to-board thermal resistance | 29.3 degC/W WSON; 37.2 degC/W MSOP PowerPAD; JEDEC thermal metric RthetaJB |
| Junction-to-top characterization parameter | 0.7 degC/W WSON; 7.2 degC/W MSOP PowerPAD; JEDEC thermal metric psiJT |
| Junction-to-board characterization parameter | 29.5 degC/W WSON; 36.9 degC/W MSOP PowerPAD; JEDEC thermal metric psiJB |
| Junction-to-case bottom thermal resistance | 7.5 degC/W WSON; 4.7 degC/W MSOP PowerPAD; JEDEC thermal metric RthetaJC(bot) |
| Output voltage swing | VEE to VCC; gate drive output OUT |
| Input type | TTL-compatible thresholds; IN non-inverting input and INB inverting input |
| Automotive qualification | AEC-Q100 Grade 1 qualified; LM5112-Q1 variant |
| Datasheet Status | request_only |
Product Overview
The LM5112 is a Texas Instruments MOSFET gate driver for Power_Management designs that require a VEE-to-VCC gate-drive output. It provides non-inverting IN and inverting INB control inputs with TTL-compatible thresholds, including a 2.3 V minimum logic-high input level and 0.8 V maximum logic-low input level.
Operating voltage is specified from 3.5 to 14 V for VCC-IN_REF and VCC-VEE, with operation over a -40 degC to 125 degC junction-temperature range. The driver delivers 7 A peak sink current and 3 A peak source current at OUT = VCC/2 using 200 ns pulsed current conditions.
Dynamic specifications include 25 ns typical low-to-high and high-to-low propagation delays, each with a 40 ns maximum, using a 2 nF load. Rise time is typically 14 ns and fall time is typically 12 ns with the same load condition.
Package options are a 6-pin WSON (NGG) 3.00 mm x 3.00 mm and an 8-pin MSOP PowerPAD (DGN) 3.00 mm x 3.00 mm. Thermal metrics are specified for both packages, and the LM5112-Q1 variant is AEC-Q100 Grade 1 qualified.
Key Features
- 7 A peak sink current at OUT = VCC/2
- 3 A peak source current under pulsed output condition
- 3.5 to 14 V operating voltage range
- VEE-to-VCC gate-drive output voltage swing
- TTL-compatible IN and INB control thresholds
- 25 ns typical propagation delay with 2 nF load
- 14 ns typical rise time with 2 nF load
- 12 ns typical fall time with 2 nF load
- Typ 1 mA supply current at 12 V
- AEC-Q100 Grade 1 qualified LM5112-Q1 variant
Typical Applications
- MOSFET gate-drive stages
- Power management switching circuits
- TTL-controlled gate-driver interfaces
- Automotive qualified LM5112-Q1 designs
- Compact WSON power assemblies
- MSOP PowerPAD gate-drive layouts
Procurement Notes
When requesting a quote for LM5112, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the LM5112?
The LM5112 is a Texas Instruments MOSFET gate driver in the Power_Management category. It provides a VEE-to-VCC gate-drive output and uses TTL-compatible IN and INB control inputs.
What operating voltage range does the LM5112 support?
The LM5112 operating voltage is specified from 3.5 to 14 V for VCC-IN_REF and VCC-VEE. The same range is specified across TJ = -40 degC to 125 degC.
What are the LM5112 peak drive-current ratings?
The LM5112 specifies 7 A peak sink current and 3 A peak source current. Both values are measured at OUT = VCC/2 using 200 ns pulsed current conditions.
Which packages are specified for the LM5112?
The extracted package data lists a 6-pin WSON (NGG) package measuring 3.00 mm x 3.00 mm and an 8-pin MSOP PowerPAD (DGN) package measuring 3.00 mm x 3.00 mm.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.