UCC27289 Half-Bridge MOSFET Gate Driver

Texas Instruments Power_Management — specifications, applications, sourcing support and RFQ.

UCC27289 Half-Bridge MOSFET Gate Driver

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
UCC27289
Manufacturer
Texas Instruments
Package
SOIC8 (6 mm x 5 mm), SON10 (3 mm x 3 mm), SON8 (4 mm x 4 mm), SON10 (4 mm x 4 mm)
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

UCC27289 from Texas Instruments is a Power_Management half-bridge MOSFET gate driver for driving high-side and low-side N-channel MOSFETs in half-bridge or synchronous buck topologies. It is offered in SOIC8, SON10, SON8, and SON10 package options with 6 mm x 5 mm, 3 mm x 3 mm, and 4 mm x 4 mm footprints. Key parameters include a 100 V HS switch-node rating, ±3 A peak source and sink gate-drive current, 16 ns typical propagation delay, 1 ns typical delay matching, and an integrated 100 V bootstrap diode. Recommended VDD operation is 8 V to 16 V, with a 12 V nominal supply.

Specifications

TypeDescription
Part NumberUCC27289
ManufacturerTexas Instruments
Product TypeLDO Regulator
CategoryPower Management
Package CaseSOIC8 (6 mm x 5 mm), SON10 (3 mm x 3 mm), SON8 (4 mm x 4 mm), SON10 (4 mm x 4 mm)
Inferred CategoryPower_Management
Component TypePower_IC
Driver ConfigurationHigh-side and low-side driver for two N-channel MOSFETs; half-bridge or synchronous buck topologies
Maximum Switch Node Voltage Rating100 V; HS pin rating in description
Peak Output Current±3 A; source and sink gate-drive current
Typical Propagation Delay16 ns; feature summary
Typical Delay Matching1 ns; feature summary
Rise Time12 ns typ; 1800-pF load
Fall Time10 ns typ; 1800-pF load
Integrated Bootstrap Diode Rating100 V; integrated bootstrap diode
Typical Undervoltage Lockout8 V; feature summary
Absolute Maximum VDD Supply Voltage-0.3 to 20 V; with respect to VSS
Absolute Maximum Input Voltage-5 to 20 V; EN, HI, and LI pins, with respect to VSS
Absolute Maximum LO Output Voltage-0.3 to VDD + 0.3 V DC; -2 to VDD + 0.3 V for pulses <100 ns
Absolute Maximum HO Output VoltageVHS - 0.3 to VHB + 0.3 V DC; VHS - 2 to VHB + 0.3 V for pulses <100 ns
Absolute Maximum HS Voltage-10 to 100 V DC; -14 to 100 V for pulses <100 ns
Absolute Maximum HB Voltage-0.3 to 120 V; HB pin voltage with respect to VSS
Absolute Maximum HB-HS Voltage-0.3 to 20 V; HB voltage with respect to HS
Absolute Maximum Operating Junction Temperature-40 to 150 °C; TJ
Storage Temperature-65 to 150 °C; Tstg
ESD Rating HBM±2000 V; ANSI/ESDA/JEDEC JS-001; HS, HB, and HO rated 500 V HBM
ESD Rating CDM±1500 V; JEDEC JESD22-C101
Recommended VDD Supply Voltage8 V min, 12 V nom, 16 V max; operating free-air temperature range
Recommended Input Voltage0 to VDD; EN, HI, and LI pins
Recommended LO Output Voltage0 to VDD; low-side output voltage
Recommended HO Output VoltageVHS to VHB; high-side output voltage
Recommended HS Voltage-8 to 100 V DC; -12 to 100 V for pulses <100 ns; VHB-HS < 16 V
Recommended HB VoltageVHS + 8 V to VHS + 16 V; bootstrap supply voltage
Recommended HS Slew Rate50 V/ns max; voltage slew rate on HS
Recommended Operating Junction Temperature-40 to 140 °C; TJ
Junction-to-Ambient Thermal Resistance47.3 °C/W DRC, 43.3 °C/W DRM, 43.0 °C/W DPR, 118.3 °C/W D; RθJA
VDD Quiescent Current0.36 mA typ, 0.45 mA max; VLI = VHI = 0 V, VDD = VEN = VHB = 12 V, VHS = VSS = 0 V, no load, TJ = -40°C to 140°C
VDD Operating Current2.2 mA typ, 4.5 mA max; f = 500 kHz, CLOAD = 0
HB Quiescent Current0.2 mA typ, 0.4 mA max; VLI = VHI = 0 V
HB Operating Current2.5 mA typ, 4 mA max; f = 500 kHz, CLOAD = 0
Disabled VDD Current7.0 µA typ; VEN = 0 V
EN Enable Threshold1.54 V min, 2.0 V max; voltage threshold on EN pin to enable driver
EN Disable Threshold0.7 V min, 1.21 V max; voltage threshold on EN pin to disable driver
Input Rising Threshold1.9 V min, 2.1 V typ, 2.4 V max; HI and LI inputs
Input Falling Threshold0.9 V min, 1.1 V typ, 1.3 V max; HI and LI inputs
VDD UVLO Rising Threshold6.5 V min, 7.0 V typ, 7.8 V max; VDD rising threshold
VDD UVLO Falling Threshold5.7 V min, 6.5 V typ, 7.3 V max; VDD falling threshold
HB UVLO Rising Threshold5.5 V min, 6.3 V typ, 7.1 V max; HB rising threshold with respect to HS
HB UVLO Falling Threshold5.0 V min, 5.8 V typ, 6.6 V max; HB falling threshold with respect to HS
Bootstrap Diode Forward Voltage0.65 V typ, 0.85 V max; IVDD-HB = 100 µA
Bootstrap Diode High-Current Forward Voltage0.85 V typ, 1.0 V max; IVDD-HB = 80 mA
Bootstrap Diode Dynamic Resistance1.5 Ω typ, 2.5 Ω max; ΔVF/ΔI, IVDD-HB = 100 mA and 80 mA
LO Low-Level Output Voltage0.085 V typ, 0.4 V max; ILO = 100 mA
LO High-Level Output Voltage Drop0.13 V typ, 0.42 V max; ILO = -100 mA, VLOH = VDD - VLO
LO Peak Pullup Current3.0 A typ; VLO = 0 V; not production tested
LO Peak Pulldown Current3.0 A typ; VLO = 12 V; not production tested
HO Low-Level Output Voltage0.1 V typ, 0.4 V max; IHO = 100 mA
HO High-Level Output Voltage Drop0.13 V typ, 0.42 V max; IHO = -100 mA, VHOH = VHB - VHO
HO Peak Pullup Current3.0 A typ; VHO = 0 V; not production tested
HO Peak Pulldown Current3.0 A typ; VHO = 12 V; not production tested
Propagation Delay LI Falling to LO Falling16 ns typ, 30 ns max; see Figure 6-1
Propagation Delay HI Falling to HO Falling16 ns typ, 30 ns max; see Figure 6-1
Propagation Delay LI Rising to LO Rising16 ns typ, 30 ns max; see Figure 6-1
Propagation Delay HI Rising to HO Rising16 ns typ, 30 ns max; see Figure 6-1
Delay Matching LO On to HO Off1 ns typ, 7 ns max; see Figure 6-1
Delay Matching LO Off to HO On1 ns typ, 7 ns max; see Figure 6-1
Output Rise Time12 ns typ; LO and HO, CLOAD = 1800 pF, 10% to 90%
Datasheet Statusrequest_only

Product Overview

The UCC27289 is a Texas Instruments half-bridge MOSFET gate driver for two N-channel MOSFETs. Its high-side and low-side driver structure supports half-bridge and synchronous buck topologies, with the HS pin rated to 100 V and the integrated bootstrap diode also rated to 100 V.

Gate-drive performance is specified with ±3 A peak source and sink current. Timing parameters include 16 ns typical propagation delay, 1 ns typical delay matching, 12 ns typical rise time, and 10 ns typical fall time with an 1800-pF load. The device includes undervoltage lockout behavior, with a typical feature-summary UVLO value of 8 V and detailed VDD and HB UVLO thresholds specified in the electrical characteristics.

Recommended operation uses an 8 V to 16 V VDD supply, with 12 V nominal. The device supports EN, HI, and LI input voltages from 0 to VDD, low-side output voltage from 0 to VDD, and high-side output voltage from VHS to VHB. Package options include SOIC8, SON10, SON8, and SON10 formats.

Key Features

  • High-side and low-side driver for two N-channel MOSFETs
  • 100 V maximum HS switch-node voltage rating
  • ±3 A peak source and sink gate-drive current
  • 16 ns typical propagation delay across driver paths
  • 1 ns typical delay matching between outputs
  • 12 ns typical rise time with 1800-pF load
  • 10 ns typical fall time with 1800-pF load
  • Integrated 100 V bootstrap diode
  • 8 V typical undervoltage lockout feature
  • 50 V/ns maximum recommended HS slew rate

Typical Applications

  • Half-bridge MOSFET drive
  • Synchronous buck topologies
  • High-side N-channel MOSFET drive
  • Low-side N-channel MOSFET drive
  • 100 V switch-node power stages
  • Bootstrap-supplied high-side gate drive

Procurement Notes

When requesting a quote for UCC27289, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of driver is the UCC27289?

The UCC27289 is a Texas Instruments half-bridge MOSFET gate driver. It provides high-side and low-side drive for two N-channel MOSFETs in half-bridge or synchronous buck topologies.

What switch-node voltage does the UCC27289 support?

The HS pin is rated for a 100 V maximum switch-node voltage. Recommended HS operation is -8 to 100 V DC, or -12 to 100 V for pulses shorter than 100 ns when VHB-HS is below 16 V.

What gate-drive current is specified for UCC27289?

The device specifies ±3 A peak output current for gate-drive source and sink operation. LO and HO peak pullup and pulldown currents are each listed as 3.0 A typical under the stated output-voltage conditions.

What supply range is recommended for UCC27289 VDD?

The recommended VDD supply range is 8 V minimum, 12 V nominal, and 16 V maximum. The absolute maximum VDD supply voltage is -0.3 to 20 V with respect to VSS.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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