Specifications
| Type | Description |
|---|---|
| Part Number | XL-ITR20403 |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Component Type | Sensor |
| Package / Case | Black thermoplastic housing; outline dimensions in mm, default tolerance ±0.3 mm; numeric dimensions not available in provided text |
| Device Composition | Infrared emitting diode and NPN silicon phototransistor; side-by-side package on converging optical axis |
| Peak / Cut-off Wavelength | 940 nm, λp |
| Input Emitter Power Dissipation | 75 mW at Ta=25°C |
| Continuous Forward Current | 50 mA at Ta=25°C |
| Peak Forward Current | 1 A; pulse width ≤100 µs, duty cycle=1%, Ta=25°C |
| Input Reverse Voltage | 5 V at Ta=25°C |
| Output Detector Power Dissipation | 75 mW at Ta=25°C |
| Collector-Emitter Voltage | 30 V, VCEO, Ta=25°C |
| Emitter-Collector Voltage | 5 V, VECO, Ta=25°C |
| Collector Current Rating | 20 mA, IC(on), Ta=25°C |
| Operating Temperature | -20 to +85 °C, Topr |
| Storage Temperature | -40 to +85 °C, Tstg |
| Lead Soldering Temperature | 260 °C; soldering at least 2 mm from body for 5 seconds |
| Forward Voltage | Typ 1.2 V, Max 1.5 V at IF=20 mA, Ta=25°C |
| Input Peak Wavelength | Typ 940 nm at IF=20 mA, Ta=25°C |
| Reverse Current | Max 10 µA at VR=5 V, Ta=25°C |
| Dark Current | Typ 1 nA, Max 100 nA at Ee=0 mW/cm², VCE=20 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | Max 0.4 V at IC=2 mA, Ee=1 mW/cm², Ta=25°C |
| Rise Time | Typ 15 µs at VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C |
| Fall Time | Typ 15 µs at VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C |
| Collector Current | Min 0.2 mA, Max 5 mA at IF=20 mA, VCE=5 V, Ta=25°C |
| Forward Voltage Grading Code | R2-4: Min 1.2 V, Max 1.6 V at IF=20 mA |
| Collector Current Grading Code | IC9-24: Min 0.4 mA, Max 4.8 mA at IF=20 mA, VCE=5 V |
| Moisture Sensitivity Level | MSL 2 |
| Compliance | Pb-free, RoHS compliant |
| Recommended Wave Soldering Peak | 240±5 °C for 6 s |
| Wave Soldering Limit | Not more than once for peak welding |
| Soldering Iron Temperature | <300 °C for ≤3 s each terminal, soldering iron capacity <25 W |
| Datasheet Status | request_only |
Product Overview
Electrical ratings include 75 mW input emitter power dissipation, 50 mA continuous forward current, 1 A peak forward current for pulse widths up to 100 µs at 1% duty cycle, and 5 V input reverse voltage at Ta=25°C. The detector side is rated for 75 mW power dissipation, 30 V collector-emitter voltage, 5 V emitter-collector voltage, and 20 mA collector current.
Key Features
- Infrared emitting diode with NPN silicon phototransistor
- Side-by-side optical package on converging optical axis
- 940 nm peak infrared wavelength
- 50 mA continuous forward current rating
- 1 A pulsed peak forward current rating
- 30 V collector-emitter voltage rating
- Typical 15 µs rise and fall times
- Black thermoplastic housing construction
- Operating temperature range from -20 to +85 °C
- MSL 2 moisture sensitivity classification
- Pb-free and RoHS compliant construction
- Wave soldering peak of 240±5 °C for 6 s
Typical Applications
- Through-beam object sensing
- Optical interruption detection
- Emitter-detector switching assemblies
- Infrared beam detection circuits
- Position sensing with beam interruption
- Photoelectric switch modules
Procurement Notes
When requesting a quote for XL-ITR20403, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
Related Technical Articles
FAQ
What optical components are inside XL-ITR20403?
XL-ITR20403 contains an infrared emitting diode and an NPN silicon phototransistor. The datasheet describes them as arranged side by side in a package using a converging optical axis.
What wavelength does the XL-ITR20403 emitter use?
The device is specified with a 940 nm peak wavelength. The input peak wavelength is also listed as typical 940 nm at IF=20 mA and Ta=25°C.
What are the main current ratings for XL-ITR20403?
The input emitter is rated for 50 mA continuous forward current at Ta=25°C. Peak forward current is 1 A when pulse width is ≤100 µs and duty cycle is 1%.
What soldering limits are specified for XL-ITR20403?
The datasheet specifies a 260 °C lead soldering temperature for 5 seconds at least 2 mm from the body. Recommended wave soldering is 240±5 °C for 6 seconds, with peak welding not more than once.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.