Specifications
| Type | Description |
|---|---|
| Part Number | K4B4G1646E |
| Manufacturer | SAMSUNG |
| Product Type | DRAM |
| Category | Memory & Storage |
| Package Case | 96-ball FBGA, lead-free and halogen-free; dimensions not shown in provided excerpt |
| Memory Density | 4 Gb; condition: DDR3L SDRAM E-die |
| Organization | 256M x16; condition: ordering information table |
| Internal Organization | 32Mbit x 16 I/Os x 8 banks; condition: 4Gb DDR3 SDRAM E-die device description |
| Memory Type | DDR3L SDRAM; condition: Samsung K4B4G1646E |
| I/O Width | x16 only; condition: device variant |
| Package | 96 FBGA; condition: x16 package |
| Supply Voltage VDD | 1.35 V nominal, 1.28-1.45 V; 1.5 V nominal, 1.425-1.575 V; condition: JEDEC standard DDR3L/DDR3 operation |
| I/O Supply Voltage VDDQ | 1.35 V nominal, 1.28-1.45 V; 1.5 V nominal, 1.425-1.575 V; condition: DDR3L/DDR3 operation |
| Maximum Data Rate | 1866 Mb/s per pin; condition: DDR3-1866 speed grade |
| Clock Frequency | 400 MHz; condition: DDR3-800, 800 Mb/s per pin |
| Clock Frequency | 533 MHz; condition: DDR3-1066, 1066 Mb/s per pin |
| Clock Frequency | 667 MHz; condition: DDR3-1333, 1333 Mb/s per pin |
| Clock Frequency | 800 MHz; condition: DDR3-1600, 1600 Mb/s per pin |
| Clock Frequency | 933 MHz; condition: DDR3-1866, 1866 Mb/s per pin |
| Number of Banks | 8 banks; condition: DDR3L SDRAM architecture |
| Prefetch | 8-bit prefetch; condition: DDR3L SDRAM architecture |
| Burst Length | 8 or 4; condition: BL8 or BL4 with tCCD=4; BL4 does not allow seamless read or write; selectable on-the-fly using A12 or MRS |
| Programmable CAS Latency | 5, 6, 7, 8, 9, 10, 11, 12, 13; condition: posted CAS supported |
| Programmable Additive Latency | 0, CL-2, or CL-1 clocks; condition: DDR3L mode register setting |
| CAS Write Latency | 5; condition: DDR3-800 |
| CAS Write Latency | 6; condition: DDR3-1066 |
| CAS Write Latency | 7; condition: DDR3-1333 |
| CAS Write Latency | 8; condition: DDR3-1600 |
| CAS Write Latency | 9; condition: DDR3-1866 |
| tCK(min) | 2.5 ns; condition: DDR3-800, 6-6-6 speed bin |
| tCK(min) | 1.875 ns; condition: DDR3-1066, 7-7-7 speed bin |
| tCK(min) | 1.5 ns; condition: DDR3-1333, 9-9-9 speed bin |
| tCK(min) | 1.25 ns; condition: DDR3-1600, 11-11-11 speed bin |
| tCK(min) | 1.071 ns; condition: DDR3-1866, 13-13-13 speed bin |
| CAS Latency | 6 nCK; condition: DDR3-800 speed bin |
| CAS Latency | 7 nCK; condition: DDR3-1066 speed bin |
| CAS Latency | 9 nCK; condition: DDR3-1333 speed bin |
| CAS Latency | 11 nCK; condition: DDR3-1600 speed bin |
| CAS Latency | 13 nCK; condition: DDR3-1866 speed bin |
| tRCD(min) | 15 ns; condition: DDR3-800 speed bin |
| tRCD(min) | 13.125 ns; condition: DDR3-1066 speed bin |
| tRCD(min) | 13.5 ns; condition: DDR3-1333 speed bin |
| tRCD(min) | 13.75 ns; condition: DDR3-1600 speed bin |
| tRCD(min) | 13.91 ns; condition: DDR3-1866 speed bin |
| tRP(min) | 15 ns; condition: DDR3-800 speed bin |
| tRP(min) | 13.125 ns; condition: DDR3-1066 speed bin |
| tRP(min) | 13.5 ns; condition: DDR3-1333 speed bin |
| tRP(min) | 13.75 ns; condition: DDR3-1600 speed bin |
| tRP(min) | 13.91 ns; condition: DDR3-1866 speed bin |
| tRAS(min) | 37.5 ns; condition: DDR3-800 and DDR3-1066 speed bins |
| tRAS(min) | 36 ns; condition: DDR3-1333 speed bin |
| tRAS(min) | 35 ns; condition: DDR3-1600 speed bin |
| tRAS(min) | 34 ns; condition: DDR3-1866 speed bin |
| tRC(min) | 52.5 ns; condition: DDR3-800 speed bin |
| tRC(min) | 50.625 ns; condition: DDR3-1066 speed bin |
| tRC(min) | 49.5 ns; condition: DDR3-1333 speed bin |
| tRC(min) | 48.75 ns; condition: DDR3-1600 speed bin |
| tRC(min) | 47.91 ns; condition: DDR3-1866 speed bin |
| Refresh Interval | 7.8 us; condition: TCASE <= 85°C; also specified for -40°C <= TCASE <= 85°C industrial temperature range |
| Refresh Interval | 3.9 us; condition: 85°C < TCASE <= 95°C |
| Operating Temperature Support | -40°C to 95°C; condition: industrial temperature support |
| Data Strobe | Bidirectional differential data strobe; condition: DQS and DQS# source-synchronous interface |
| On-Die Termination | Supported using ODT pin; condition: DDR3L SDRAM feature |
| Calibration | Internal self calibration through ZQ pin; condition: RZQ = 240 ohm ±1% |
| Reset | Asynchronous reset supported; condition: DDR3L SDRAM feature |
| Ordering Part Number | K4B4G1646E-BYK0; condition: 256Mx16, DDR3L-1600 11-11-11, commercial temperature/normal power |
| Ordering Part Number | K4B4G1646E-BYMA; condition: 256Mx16, DDR3L-1866 13-13-13, commercial temperature/normal power |
| Ordering Part Number | K4B4G1646E-BMK0; condition: 256Mx16, DDR3L-1600 11-11-11, industrial temperature/normal power |
| Ordering Part Number | K4B4G1646E-BMMA; condition: 256Mx16, DDR3L-1866 13-13-13, industrial temperature/normal power |
| Backward Compatibility | DDR3L-1600 11-11-11 and DDR3L-1333 9-9-9; condition: DDR3L-1866 ordering option note |
| Datasheet Status | request_only |
Product Overview
SAMSUNG K4B4G1646E is a 4Gb DDR3L SDRAM device for Memory & Storage designs. The device uses a x16 interface and is described with a 256M x16 organization and a 32Mbit x 16 I/O x 8-bank internal organization. It uses DDR3L SDRAM architecture with 8 banks and 8-bit prefetch.
The part supports both DDR3L and DDR3 operating voltage ranges: VDD and VDDQ are 1.35 V nominal across 1.28 V to 1.45 V, or 1.5 V nominal across 1.425 V to 1.575 V. Supported speed points include DDR3-800, DDR3-1066, DDR3-1333, DDR3-1600, and DDR3-1866, with corresponding clock frequencies from 400 MHz to 933 MHz and a maximum data rate of 1866 Mb/s per pin.
The package is 96-ball FBGA, lead-free and halogen-free, with package dimensions not shown in the provided excerpt. Device functions include selectable burst length 8 or 4, programmable CAS latency from 5 to 13, additive latency settings of 0, CL-2, or CL-1 clocks, bidirectional differential DQS/DQS# data strobe, ODT through the ODT pin, ZQ-pin calibration with RZQ = 240 ohm ±1%, and asynchronous reset.
Key Features
- 4Gb DDR3L SDRAM E-die memory density
- 256M x16 organization with x16-only I/O width
- 32Mbit x16 I/O architecture across 8 banks
- 96-ball FBGA lead-free and halogen-free package
- DDR3L and DDR3 voltage range support
- Maximum 1866 Mb/s per pin data rate
- 8-bit prefetch with BL8 or BL4 burst length
- Programmable CAS latency from 5 to 13
- Bidirectional differential DQS and DQS# data strobe
- ODT pin support and ZQ self calibration
- Asynchronous reset support
- Industrial temperature support from -40°C to 95°C
Typical Applications
- DDR3L memory subsystems
- x16 SDRAM memory channels
- Industrial temperature memory designs
- DDR3-1600 memory interfaces
- DDR3-1866 memory interfaces
- 1.35 V DDR3L systems
- 1.5 V DDR3 systems
- 96-ball FBGA memory assemblies
Procurement Notes
When requesting a quote for K4B4G1646E, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.
FAQ
What type of memory is K4B4G1646E?
K4B4G1646E is a Samsung 4Gb DDR3L SDRAM device. The extracted datasheet facts identify it as an E-die DDR3L SDRAM with x16-only I/O width and 256M x16 organization.
What package is used for K4B4G1646E?
The device is listed in a 96 FBGA package. The package case is described as a 96-ball FBGA that is lead-free and halogen-free, while package dimensions are not shown in the provided excerpt.
What supply voltages does this DDR3L SDRAM support?
Both VDD and VDDQ support 1.35 V nominal operation across 1.28 V to 1.45 V and 1.5 V nominal operation across 1.425 V to 1.575 V for DDR3L and DDR3 operation.
What data rates and clock frequencies are specified?
The maximum data rate is 1866 Mb/s per pin for the DDR3-1866 speed grade. Listed clock frequencies are 400, 533, 667, 800, and 933 MHz for DDR3-800 through DDR3-1866 operation.
Does K4B4G1646E support industrial temperature operation?
Yes. The extracted facts list industrial temperature support from -40°C to 95°C. Refresh interval is 7.8 us at TCASE up to 85°C and 3.9 us when TCASE is above 85°C up to 95°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.