K4F6E3S4HM-TF(H)CL 16Gb LPDDR4 SDRAM

Samsung Memory & Storage — specifications, applications, sourcing support and RFQ.

K4F6E3S4HM-TF(H)CL 16Gb LPDDR4 SDRAM

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
K4F6E3S4HM-TF(H)CL
Manufacturer
Samsung
Package
200FBGA, 10 x 15
Category
Memory & Storage
Product Type
DRAM

Quick Sourcing Note

K4F6E3S4HM-TF(H)CL from Samsung is a Memory & Storage device identified as a 16Gb LPDDR4 SDRAM. The listed organization is 64Mb x16DQ x8 banks x2 channels, with x16 DQ width, 8 banks, and 2 channels. It is supplied in a 200FBGA, 10x15 package case. The datasheet identifies the device for automotive use and references the Samsung Automotive Mission Profile for operating temperature basis. Critical interface details include differential CK input, 1.1V high speed LVCMOS input/output measurement levels, and referenced control inputs CKE, Reset_n, and ODT_CA.

Specifications

TypeDescription
Part NumberK4F6E3S4HM-TF(H)CL
ManufacturerSamsung
Product TypeDRAM
CategoryMemory & Storage
Memory Density16 Gb
Memory TypeLPDDR4 SDRAM
Device Organization64Mb x16DQ x8 banks x2 channels
DQ Widthx16 DQ
Bank Count8 banks
Channel Count2 channels
Package Type200FBGA
Package Dimensions10 x 15
Automotive DesignationFor Automotive
Base Part NumberK4F6E3S4HM
Ordering Part NumberK4F6E3S4HM-TFCL
Alternate Listed Part NumberK4F6E3S4HM-THCL
Datasheet RevisionRev. 1.3
Datasheet Revision DateMay 2020
Storage Temperature Range-55 to 125 °C
Previous Storage Temperature Range-55 to 150 °C
Operating Temperature BasisSamsung Automotive Mission Profile
Clock Input TypeDifferential CK input
High-Speed Input Standard1.1V High speed LVCMOS (HS_LLVCMOS)
Control Inputs ReferencedCKE, Reset_n, ODT_CA
Datasheet Statusrequest_only

Product Overview

K4F6E3S4HM-TF(H)CL is listed by Samsung as a Memory & Storage component and identified in the datasheet facts as a 16Gb LPDDR4 SDRAM device. The top-level organization is 64Mb x16DQ x8 banks x2 channels, giving a documented x16 DQ width, 8-bank structure, and 2-channel arrangement.

The package case is 200FBGA, 10 x 15, with the package dimensions noted without an explicitly shown unit in the extracted text. The base part number is K4F6E3S4HM, while K4F6E3S4HM-TFCL is the ordering part number and K4F6E3S4HM-THCL is an alternate listed part number.

The datasheet header designates the device for automotive use. The operating temperature basis is the Samsung Automotive Mission Profile, and the Rev. 1.3 datasheet changed the storage temperature range to -55 to 125 °C from the previous -55 to 150 °C. Interface-related facts include differential CK input, 1.1V High speed LVCMOS measurement levels, and referenced control inputs CKE, Reset_n, and ODT_CA.

Key Features

  • 16 Gb LPDDR4 SDRAM memory density
  • 64Mb x16DQ x8 banks x2 channels organization
  • x16 DQ width per listed device organization
  • 8 banks per listed LPDDR4 SDRAM organization
  • 2 channels per top-level organization
  • 200FBGA package with 10 x 15 dimensions
  • Automotive designation stated in datasheet header
  • Differential CK input referenced for AC/DC measurement
  • 1.1V HS_LLVCMOS high-speed input standard
  • Control inputs include CKE, Reset_n, ODT_CA

Typical Applications

  • Automotive memory subsystems
  • LPDDR4 SDRAM designs
  • Dual-channel memory architectures
  • x16 DQ memory interfaces
  • 200FBGA board assemblies
  • Automotive mission profile designs

Procurement Notes

When requesting a quote for K4F6E3S4HM-TF(H)CL, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.

FAQ

What memory type is K4F6E3S4HM-TF(H)CL?

K4F6E3S4HM-TF(H)CL is identified in the extracted datasheet facts as a 16Gb LPDDR4 SDRAM device in the Memory & Storage category.

What is the device organization for this LPDDR4 SDRAM?

The listed top-level organization is 64Mb x16DQ x8 banks x2 channels. The extracted facts also specify x16 DQ width, 8 banks, and 2 channels.

What package is listed for K4F6E3S4HM-TF(H)CL?

The package type is listed as 200FBGA, and the package summary gives dimensions of 10 x 15. The extracted text does not explicitly show the unit for those dimensions.

What datasheet revision information is available?

The provided datasheet revision is Rev. 1.3 dated May 2020. In that revision, the storage temperature range is listed as -55 to 125 °C, changed from -55 to 150 °C.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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