Micron_3D_NAND_Flyer 3D NAND Flash Memory

Micron Memory & Storage — specifications, applications, sourcing support and RFQ.

Micron_3D_NAND_Flyer 3D NAND Flash Memory

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
Micron_3D_NAND_Flyer
Manufacturer
Micron
Package
Die, BGA, TSOP; MLC TSOP 48-pin SDP/DDP; BGA132 SDP/DDP/QDP/8DP/16DP; TLC BGA132 SDP/DDP/3DP/QDP/8DP/16DP
Category
Memory & Storage
Product Type
DRAM

Quick Sourcing Note

Micron_3D_NAND_Flyer from Micron is a 3D NAND flash memory product family in the Memory & Storage category. It uses a floating gate cell process architecture with 32-stack storage tiers and 32 vertically stacked cell layers, providing 3X the capacity of existing planar NAND products. MLC options provide 32GB (256Gb) die density with 3D, 2b/c operation, while TLC options provide 48GB (384Gb) die density with 3D, 3b/c operation. Package support includes die, BGA, and MLC TSOP options, with BGA132 configurations across SDP, DDP, QDP, 8DP, and 16DP variants. Applications include enterprise, cloud, consumer, client SSD, embedded, mobile, and automotive storage.

Specifications

TypeDescription
Part NumberMicron_3D_NAND_Flyer
ManufacturerMicron
Product TypeDRAM
CategoryMemory & Storage
Package / CaseDie, BGA, TSOP; MLC TSOP 48-pin SDP/DDP; BGA132 SDP/DDP/QDP/8DP/16DP; TLC BGA132 SDP/DDP/3DP/QDP/8DP/16DP
Memory technology3D NAND Flash Memory; condition: Micron 3D NAND product family; source page: 1
Cell architectureFloating gate cell process architecture; condition: Micron 3D NAND; source page: 1
Storage tiers32-stack storage tiers; condition: Micron 3D NAND; source page: 1
Cell layers32 cell layers vertically stacked; condition: 3D NAND vs. existing planar NAND; source page: 2
Capacity improvement3X the capacity of existing planar NAND products; condition: compared with existing planar NAND technologies; source page: 1
MLC die density32GB (256Gb); condition: MLC technology; source page: 2
TLC die density48GB (384Gb); condition: TLC technology; source page: 2
MLC process node and bits per cell3D, 2b/c; condition: MLC technology; source page: 2
TLC process node and bits per cell3D, 3b/c; condition: TLC technology; source page: 2
MLC speed grade533 MT/s and 667 MT/s; condition: MLC technology; source page: 2
TLC speed grade533 MT/s and 667 MT/s; condition: TLC technology; source page: 2
MLC page size16,384 + 2208 bytes; condition: MLC technology; source page: 2
TLC page size16,384 + 2208 bytes; condition: TLC technology; source page: 2
MLC pages per block1024; condition: MLC technology; source page: 2
TLC pages per block1536; condition: TLC technology; source page: 2
MLC block size16,384K + 2208K bytes; condition: MLC technology; source page: 2
TLC block size27,888K bytes; condition: TLC technology; source page: 2
MLC blocks x plane548 x 4; condition: MLC technology; source page: 2
TLC blocks x plane548 x 4; condition: TLC technology; source page: 2
MLC tPROG1300 us typ, 2500 us max; condition: MLC technology; source page: 2
TLC tPROG1630 us typ, 5000 us max; condition: TLC technology; source page: 2
MLC program/erase cycle rating3K + read retry; condition: MLC technology; source page: 2
TLC program/erase cycle rating1500 LDPC / 500 BCH; condition: TLC technology; source page: 2
MLC ECC/codeword72b/1KB BCH or LDPC; condition: MLC technology; source page: 2
TLC ECC/codewordLDPC / 72 bit BCH; condition: TLC technology; source page: 2
MLC tBERS15 ms typ, 45 ms max; condition: MLC technology; source page: 2
TLC tBERS15 ms typ, 45 ms max; condition: TLC technology; source page: 2
MLC tR77 us typ; condition: MLC technology; source page: 2
TLC tR100 us typ; condition: TLC technology; source page: 2
MLC tSNAP40 us; condition: MLC technology; source page: 2
TLC tSNAP53 us; condition: TLC technology; source page: 2
MLC ONFI compliance4.0; condition: MLC technology; source page: 2
TLC ONFI compliance4.0; condition: TLC technology; source page: 2
MLC VCCQ1.2 V, 1.8 V; condition: VCC = 3.3 V; source page: 2
TLC VCCQ1.2 V, 1.8 V; condition: VCC = 3.3 V; source page: 2
MLC package typesDie, BGA, TSOP; condition: MLC technology; source page: 2
TLC package typesDie, BGA; condition: TLC technology; source page: 2
MLC TSOP package options48-pin TSOP (SDP, DDP); condition: MLC technology; source page: 2
TLC TSOP package optionsNot offered; condition: TLC technology table shows dash; source page: 2
MLC BGA package optionsBGA132 (SDP, DDP, QDP, 8DP, 16DP); condition: MLC technology; source page: 2
TLC BGA package optionsBGA132 (SDP, DDP, 3DP, QDP, 8DP, 16DP); condition: TLC technology; source page: 2
Best-fit applicationsEnterprise storage, cloud storage, consumer storage, client SSDs, embedded, mobile, automotive; condition: 3D NAND applications; source page: 2
MLC gum stick SSD capacity enabledUp to 2TB; condition: using MLC 3D NAND; source page: 1
TLC gum stick SSD capacity enabled3.5TB; condition: using TLC 3D NAND; source page: 1
MLC 2.5-inch SSD capacity enabledMore than 8TB; condition: standard 2.5-inch SSD using MLC 3D NAND; source page: 1
TLC 2.5-inch SSD capacity enabled10TB; condition: standard 2.5-inch SSD using TLC 3D NAND; source page: 1
Performance featureFast 4K read mode; condition: improves random read performance; source page: 1
Power saving featureSleep mode cuts power to inactive NAND die; condition: even when other die in same package are active; source page: 1
FortisFlash feature noteEnables higher endurance than standard MLC/TLC without enterprise usage limitations; condition: FortisFlash base part numbers; source page: 2
Datasheet Statusrequest_only

Product Overview

Micron_3D_NAND_Flyer describes Micron 3D NAND flash memory built on a floating gate cell process architecture. The product family uses 32-stack storage tiers and 32 vertically stacked cell layers, giving 3X the capacity of existing planar NAND products according to the extracted datasheet facts.

The family includes MLC and TLC technology options. MLC is specified as 32GB (256Gb), 3D, 2b/c, while TLC is specified as 48GB (384Gb), 3D, 3b/c. Both list 533 MT/s and 667 MT/s speed grades, ONFI 4.0 compliance, 1.2 V and 1.8 V VCCQ with VCC = 3.3 V, and 16,384 + 2208 byte page size.

Package support includes die and BGA for both MLC and TLC, plus TSOP for MLC. MLC supports 48-pin TSOP in SDP and DDP configurations and BGA132 in SDP, DDP, QDP, 8DP, and 16DP configurations. TLC supports BGA132 in SDP, DDP, 3DP, QDP, 8DP, and 16DP configurations, with no TLC TSOP option listed. Stated applications include enterprise storage, cloud storage, consumer storage, client SSDs, embedded systems, mobile, and automotive.

Key Features

  • 3D NAND Flash Memory product family
  • Floating gate cell process architecture
  • 32-stack storage tiers with vertically stacked cell layers
  • MLC 32GB (256Gb) die density
  • TLC 48GB (384Gb) die density
  • 533 MT/s and 667 MT/s speed grades
  • ONFI 4.0 compliance for MLC and TLC
  • Fast 4K read mode improves random read performance
  • Sleep mode cuts power to inactive NAND die
  • FortisFlash enables higher endurance than standard MLC/TLC

Typical Applications

  • Enterprise storage
  • Cloud storage
  • Consumer storage
  • Client SSDs
  • Embedded storage
  • Mobile storage
  • Automotive storage
  • Gum stick SSDs
  • 2.5-inch SSDs

Procurement Notes

When requesting a quote for Micron_3D_NAND_Flyer, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.

FAQ

What memory technology does Micron_3D_NAND_Flyer describe?

Micron_3D_NAND_Flyer describes Micron 3D NAND Flash Memory. The extracted facts identify a floating gate cell process architecture, 32-stack storage tiers, and 32 vertically stacked cell layers compared with existing planar NAND.

What MLC and TLC die densities are specified?

The extracted facts list MLC die density as 32GB (256Gb) with 3D, 2b/c operation. TLC die density is listed as 48GB (384Gb) with 3D, 3b/c operation.

Which package options are listed for this product family?

MLC package types include die, BGA, and TSOP, with 48-pin TSOP SDP/DDP and BGA132 SDP, DDP, QDP, 8DP, and 16DP options. TLC includes die and BGA, with BGA132 SDP, DDP, 3DP, QDP, 8DP, and 16DP options.

What applications are identified for Micron 3D NAND?

The extracted facts identify enterprise storage, cloud storage, consumer storage, client SSDs, embedded, mobile, and automotive as best-fit applications for Micron 3D NAND.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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