XL4N35-G Phototransistor Optocoupler

XINGLIGHT LED — specifications, applications, sourcing support and RFQ.

XL4N35-G Phototransistor Optocoupler

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Part Number
XL4N35-G
Manufacturer
XINGLIGHT
Package
DIP6 / SMD6; package outline dimensions referenced in mm but numeric dimensions not provided in text
Category
LED
Product Type
SMD LED

Quick Sourcing Note

XL4N35-G from XINGLIGHT is an LED-category phototransistor optocoupler supplied in DIP6 and SMD6 package options. The device provides a minimum current transfer ratio of 100% at IF=10 mA and VCE=10 V, 5000 Vrms input-to-output isolation, and an ambient operating range of -55 to +100 °C. Key electrical limits include 60 mA forward current, 30 V collector-emitter voltage, 100 mA collector current, and 350 mW total power dissipation. Assembly data covers reflow, wave soldering, and hand-soldering profiles, with DIP6 tube and SMD6 tape-and-reel packing options.

Specifications

TypeDescription
Part NumberXL4N35-G
ManufacturerXINGLIGHT
Product TypeSMD LED
CategoryLED
Package / CaseDIP6 / SMD6; package outline dimensions referenced in mm but numeric dimensions not provided in text
Current Transfer Ratiomin 100 %; IF=10 mA, VCE=10 V
Isolation Voltage5000 Vrms; input to output; 40-60% RH, AC for 1 minute; pins 1,2,3 shorted and pins 4,5,6 shorted
Operating Temperature-55 to +100 °C; ambient operating range
Package OptionsDIP6, SMD6; case/package types
Molding Compound FlammabilityUL 94V-0; mechanical data
Terminal Finishmatte tin-plated leads; solderability per MIL-STD-202, Method 208
Forward Current60 mA; maximum rating, TA=25°C unless otherwise specified
Forward Peak Current1 A; pulse width <=1 us, duty ratio 0.001; TA=25°C unless otherwise specified
Reverse Voltage6 V; input maximum rating, TA=25°C unless otherwise specified
Input Power Dissipation100 mW; maximum rating, TA=25°C unless otherwise specified
Collector Power Dissipation300 mW; output maximum rating, TA=25°C unless otherwise specified
Collector Current100 mA; output maximum rating, TA=25°C unless otherwise specified
Collector-Base Voltage70 V; output maximum rating, TA=25°C unless otherwise specified
Collector-Emitter Voltage30 V; output maximum rating, TA=25°C unless otherwise specified
Emitter-Collector Voltage7 V; output maximum rating, TA=25°C unless otherwise specified
Total Power Dissipation350 mW; thermal characteristic, TA=25°C unless otherwise specified
Storage Temperature Range-55 to +125 °C; thermal characteristic
Soldering Temperature260 °C; for 10 seconds
Forward Voltagetyp 1.2 V, max 1.5 V; IF=10 mA, TA=25°C unless otherwise specified
Reverse Currentmax 10 uA; VR=3 V, TA=25°C unless otherwise specified
Input Capacitancetyp 50 pF; V=0 V, f=1 kHz, TA=25°C unless otherwise specified
Collector Dark Currentmax 50 nA; VCE=10 V, TA=25°C unless otherwise specified
Collector-Base Breakdown Voltagemin 70 V; IB=0.1 mA, IF=0, TA=25°C unless otherwise specified
Collector-Emitter Breakdown Voltagemin 30 V; IC=0.1 mA, IF=0, TA=25°C unless otherwise specified
Emitter-Collector Breakdown Voltagemin 7 V; IE=0.01 mA, IF=0, TA=25°C unless otherwise specified
Collector-Emitter Saturation Voltagetyp 0.3 V; IF=50 mA, IC=2 mA, TA=25°C unless otherwise specified
Isolation Resistancemin 5*10^10 ohm, typ 10^11 ohm; DC 500 V, 40-60% RH, TA=25°C unless otherwise specified
Isolation Capacitancetyp 1 pF, max 2.5 pF; V=0, f=1 MHz, TA=25°C unless otherwise specified
Response Time Risetyp 3 us, max 10 us; VCE=10 V, IC=2 mA, RL=100 ohm, TA=25°C unless otherwise specified
Response Time Falltyp 3 us, max 10 us; VCE=10 V, IC=2 mA, RL=100 ohm, TA=25°C unless otherwise specified
Reflow Preheat Temperaturemin 150 °C, max 200 °C; recommended reflow soldering profile
Reflow Preheat Timemin 60 s, max 120 s; recommended reflow soldering profile
Reflow Ramp-Up Ratemax 3 °C/s; TL to TP
Reflow Liquidus Temperature217 °C; recommended reflow soldering profile
Reflow Time Above Liquidusmin 60 s, max 150 s; time above TL
Reflow Peak Temperature260 °C; recommended reflow soldering profile
Reflow Time Near Peakmax 30 s; time during which Tc is between TP-5 and TP
Reflow Ramp-Down Ratemax 6 °C/s; TP to TL
Reflow Cycle Limitno more than 3 times; recommended reflow soldering
Wave Soldering Average Ramp-Up Rate~200 °C/s; wave soldering profile feature as printed
Wave Soldering Heating Rate During Preheattyp 1-2 °C/s, max 4 °C/s; wave soldering profile
Wave Soldering Final Preheat Temperature~130 °C; Ts, wave soldering profile
Wave Soldering Preheat Time>60 s; 25°C to Ts
Wave Soldering Peak Temperature260 °C; Tp, wave soldering profile
Wave Soldering Time Within Peak Temperature10 s; tp, wave soldering profile
Wave Soldering Ramp-Down Ratemax 5 °C/s; wave soldering profile
Hand Soldering Iron Temperature360 °C +5 °C; within 3 s; for product rework or sample testing only
DIP6 Shipping Quantity65 pcs/tube; ordering information
SMD6 Shipping Quantity1000 pcs/tape and reel; ordering information
DIP6 Carton Quantity32500 pcs/carton; packing summary; 65 pcs/tube, 3250 pcs/box
SMD6 Carton Quantity20000 pcs/carton; packing summary; 1000 pcs/reel, 2000 pcs/box
Datasheet Statusrequest_only

Product Overview

The XL4N35-G is a XINGLIGHT phototransistor optocoupler in the LED category. It is specified with an input LED and phototransistor output structure, supporting optical coupling where input-to-output isolation is required. The datasheet lists a 5000 Vrms isolation voltage under 40-60% RH AC test conditions for one minute, with input pins shorted together and output pins shorted together.

Electrical characteristics include a minimum current transfer ratio of 100% at IF=10 mA and VCE=10 V, forward voltage of 1.2 V typical and 1.5 V maximum at IF=10 mA, and collector dark current limited to 50 nA maximum at VCE=10 V. Output ratings include 100 mA collector current, 70 V collector-base voltage, and 30 V collector-emitter voltage.

Package choices are DIP6 and SMD6, with matte tin-plated leads and UL 94V-0 molding compound flammability. Assembly information includes reflow peak temperature of 260 °C, wave soldering peak temperature of 260 °C, and hand soldering at 360 °C +5 °C within 3 seconds for rework or sample testing only.

Key Features

  • Phototransistor optocoupler in DIP6 and SMD6 packages
  • Minimum 100% CTR at IF=10 mA, VCE=10 V
  • 5000 Vrms input-to-output isolation voltage rating
  • -55 to +100 °C ambient operating temperature range
  • UL 94V-0 molding compound flammability rating
  • Matte tin-plated leads per MIL-STD-202 Method 208
  • Typical 3 us rise and fall response times
  • Reflow and wave soldering peak temperature of 260 °C
  • DIP6 tube and SMD6 tape-and-reel shipping options

Typical Applications

  • Input-to-output signal isolation
  • Microcontroller input isolation
  • Industrial control interfaces
  • Power supply feedback isolation
  • Logic signal coupling
  • DIP6 through-hole assemblies
  • SMD6 surface-mount assemblies

Procurement Notes

When requesting a quote for XL4N35-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.

FAQ

What type of device is the XL4N35-G?

The XL4N35-G is a XINGLIGHT phototransistor optocoupler in the LED category. The extracted datasheet facts identify DIP6 and SMD6 package options and specify input LED, output transistor, isolation, transfer ratio, and response-time parameters.

What isolation rating is specified for XL4N35-G?

The datasheet facts list 5000 Vrms input-to-output isolation, tested at 40-60% relative humidity with AC applied for one minute. The condition shorts pins 1, 2, and 3 together and pins 4, 5, and 6 together.

What current transfer ratio does XL4N35-G provide?

The current transfer ratio is specified as 100% minimum under the stated condition of IF=10 mA and VCE=10 V. This value should be interpreted with the datasheet test condition, not as a general value across all operating points.

Which package and packing options are listed?

The extracted facts list DIP6 and SMD6 package options. DIP6 shipping is 65 pieces per tube, with 32500 pieces per carton. SMD6 shipping is 1000 pieces per tape and reel, with 20000 pieces per carton.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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