Specifications
| Type | Description |
|---|---|
| Part Number | Kioxia_TH58_BiCS_Datasheet |
| Manufacturer | Kioxia |
| Product Type | DRAM |
| Category | Memory & Storage |
| Device Part Number | TH58CYG3S0HRAIJ |
| Memory Density | 8 Gb |
| Nominal Interface Voltage | 1.8 V |
| Memory Type | NAND Flash |
| Interface Type | Serial interface |
| Datasheet Manufacturer | KIOXIA Corporation |
| Datasheet Revision | Rev. 2.00 |
| Datasheet Date | 2019-10-01 |
| Package | WSON8 |
| Package Code | P-WSON8-0608-1.27-003 |
| Read Cell Array Command | 13h |
| Read Buffer Command | 03h or 0Bh |
| Read Buffer x2 Command | 3Bh |
| Read Buffer x4 Command | 6Bh |
| Program Load x1 Command | 02h |
| Program Load x4 Command | 32h |
| Program Execute Command | 10h |
| Program Load Random Data x1 Command | 84h |
| Program Load Random Data x4 Command | 34h or C4h |
| Block Erase Command | D8h |
| Reset Command | FFh or FEh |
| Write Enable Command | 06h |
| Write Disable Command | 04h |
| Set Feature Command | 1Fh |
| Get Feature Command | 0Fh |
| Protect Execute Command | 2Ah |
| Read ID Command | 9Fh |
| Supported Read Mode | High Speed Mode |
| ECC Feature | Internal ECC |
| ECC Reporting | ECC bit flip count detection, bit flip count report, maximum bit flip count report |
| Datasheet Status | request_only |
Product Overview
Kioxia_TH58_BiCS_Datasheet covers the KIOXIA Corporation TH58CYG3S0HRAIJ, described in the manufacturer datasheet as an 8 Gb NAND Flash memory with a 1.8 V nominal serial interface. It belongs to the Memory & Storage category and is identified as a 1.8V Serial Interface NAND device.
The package information lists WSON8 and package code P-WSON8-0608-1.27-003. Assembly planning should therefore be based on this WSON8 package case and the package code stated in the datasheet, without assuming other package, compliance, or moisture sensitivity data.
The command set includes page read commands such as Read Cell Array 13h, Read Buffer 03h or 0Bh, Read Buffer x2 3Bh, and Read Buffer x4 6Bh. Program commands include Program Load x1 02h, Program Load x4 32h, Program Execute 10h, random data load x1 84h, and random data load x4 34h or C4h.
The device also lists Block Erase D8h, Reset FFh or FEh, Write Enable 06h, Write Disable 04h, Set Feature 1Fh, Get Feature 0Fh, Protect Execute 2Ah, and Read ID 9Fh. Internal ECC supports ECC bit flip count detection, bit flip count reporting, and maximum bit flip count reporting.
Key Features
- 8 Gb NAND Flash memory density
- 1.8 V nominal serial interface
- WSON8 package, code P-WSON8-0608-1.27-003
- High Speed Mode page read support
- Internal ECC for NAND data management
- ECC bit flip count detection and reporting
- Read buffer supports x1, x2, and x4 commands
- Program load supports x1, x4, and random data
- Block erase, reset, write enable, and write disable commands
- Set Feature, Get Feature, and Read ID command support
Typical Applications
- Serial NAND flash storage designs
- 1.8 V memory interfaces
- WSON8 memory board assemblies
- High Speed Mode read operations
- Internal ECC managed storage
- Command-controlled program workflows
- Command-controlled erase workflows
- NAND designs using x1/x2/x4 reads
Procurement Notes
When requesting a quote for Kioxia_TH58_BiCS_Datasheet, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.
FAQ
What device number is identified in the datasheet?
The extracted datasheet facts identify TH58CYG3S0HRAIJ as the device part number. The CMS part number is Kioxia_TH58_BiCS_Datasheet, and the manufacturer is listed as Kioxia, with the datasheet cover naming KIOXIA Corporation.
What memory density and interface voltage are specified?
The product title facts specify 8 Gb memory density, NAND Flash memory type, a serial interface, and a 1.8 V nominal interface voltage. These parameters define the device as a 1.8V Serial Interface NAND product.
Which package case is listed for this NAND device?
The package information section lists WSON8 as the package and P-WSON8-0608-1.27-003 as the package code. No other package, RoHS, REACH, or MSL data is included in the extracted facts.
What ECC information is provided by the datasheet facts?
The extracted facts list Internal ECC as a device feature. ECC reporting includes ECC bit flip count detection, bit flip count report, and maximum bit flip count report, all sourced from the internal ECC subsections.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.