Specifications
| Type | Description |
|---|---|
| Part Number | XL-ITR1203D |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | Black thermoplastic through-beam photoelectric switch / photo interrupter package; outline dimensions shown but numeric dimensions not readable in provided text |
| Device Composition | Infrared emission diode and NPN silicon phototransistor; packaged side by side on converging optical axis |
| Peak / Cut-off Wavelength | 940 nm; IR emitter |
| Moisture Sensitivity Level | MSL 2; product rating |
| RoHS Compliance | RoHS compliant; Pb-free version |
| Input Emitter Power Dissipation | 75 mW; Ta=25°C |
| Continuous Forward Current | 50 mA; input emitter, Ta=25°C |
| Peak Forward Current | 1000 mA; pulse width <=100 us, duty cycle=1%, Ta=25°C |
| Reverse Voltage | 5 V; input emitter, Ta=25°C |
| Output Detector Power Dissipation | 75 mW; Ta=25°C |
| Collector-Emitter Voltage | 30 V; output detector, Ta=25°C |
| Emitter-Collector Voltage | 5 V; output detector, Ta=25°C |
| Collector Current | 20 mA; output detector on-state, Ta=25°C |
| Operating Temperature | -25 to +85 °C; Topr |
| Storage Temperature | -40 to +85 °C; Tstg |
| Lead Soldering Temperature | 260 °C; Tsol; soldering at least 2 mm from body for 5 seconds |
| Forward Voltage | Typ 1.2 V, Max 1.6 V; IF=20 mA, Ta=25°C |
| Forward Voltage | Typ 1.4 V, Max 1.85 V; IF=100 mA, pulse condition noted, Ta=25°C |
| Forward Voltage | Typ 2.6 V, Max 4.0 V; IF=1 A, pulse width <=100 us, duty cycle=1%, Ta=25°C |
| Peak Wavelength | Typ 940 nm; IF=20 mA, Ta=25°C |
| Reverse Current | Max 10 uA; VR=5 V, Ta=25°C |
| Dark Current | Max 100 nA; Ee=0 mW/cm2, VCE=20 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | Max 0.4 V; IC=2 mA, Ee=1 mW/cm2, Ta=25°C |
| Rise Time | Typ 15 us; VCE=5 V, IC=1 mA, RL=1000 ohm, Ta=25°C |
| Fall Time | Typ 15 us; VCE=5 V, IC=1 mA, RL=1000 ohm, Ta=25°C |
| Collector Current / Photocurrent | Min 0.3 mA; IF=20 mA, VCE=5 V, Ta=25°C |
| Voltage Grading Code | R2-4: Min 1.2 V, Max 1.6 V; IF=20 mA |
| Collector Current Grading Code | IC6-18: Min 0.3 mA, Max 0.9 mA; IF=20 mA, VCE=5 V |
| Recommended Wave Solder Peak Temperature | 240 ±5 °C for 6 s; recommended maximum welding temperature |
| Wave Soldering Limit | One pass maximum; peak welding shall not be done more than once |
| Hand Soldering Temperature | Less than 300 °C for 3 s; each terminal, soldering iron capacity less than 25 W |
| Datasheet Status | request_only |
Product Overview
XL-ITR1203D is a XINGLIGHT infrared photo interrupter switch classified in the LED category. Its internal structure combines an infrared emission diode and an NPN silicon phototransistor, packaged side by side on a converging optical axis for through-beam photoelectric switching.
Key Features
- Infrared emission diode with NPN silicon phototransistor
- Side-by-side optical axis through-beam interrupter structure
- 940 nm infrared emitter peak wavelength
- 50 mA continuous forward current rating
- 1000 mA peak forward current under pulse conditions
- 30 V detector collector-emitter voltage rating
- Typical 15 us rise and fall times
- Maximum 0.4 V collector-emitter saturation voltage
- MSL 2 product moisture sensitivity rating
- RoHS compliant Pb-free version
Typical Applications
- Through-beam object detection
- Slot interruption sensing
- Position detection assemblies
- Motion or rotation counting
- Presence detection circuits
- Optical switching modules
Procurement Notes
When requesting a quote for XL-ITR1203D, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
Related Technical Articles
FAQ
What is the XL-ITR1203D device structure?
XL-ITR1203D contains an infrared emission diode and an NPN silicon phototransistor. The two elements are packaged side by side on a converging optical axis in a black thermoplastic through-beam photo interrupter package.
What wavelength does the XL-ITR1203D emitter use?
The infrared emitter is specified at 940 nm. The datasheet lists both peak / cut-off wavelength as 940 nm and a typical peak wavelength of 940 nm at IF=20 mA and Ta=25°C.
What are the main current and voltage ratings?
The input emitter is rated for 50 mA continuous forward current, 1000 mA peak forward current under pulse conditions, and 5 V reverse voltage. The output detector is rated for 30 V collector-emitter voltage and 20 mA collector current.
What soldering limits apply to this photo interrupter?
Lead soldering is rated at 260°C for 5 seconds at least 2 mm from the body. Recommended wave solder peak temperature is 240 ±5°C for 6 seconds, one pass maximum. Hand soldering is less than 300°C for 3 seconds per terminal.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.