Specifications
| Type | Description |
|---|---|
| Part Number | EL_EL357N-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin SOP SMD, 2.0 mm profile |
| Device Structure | Infrared emitting diode optically coupled to phototransistor detector; EL357N-G series description |
| Pin 1 Function | Anode; pin configuration |
| Pin 2 Function | Cathode; pin configuration |
| Pin 3 Function | Emitter; pin configuration |
| Pin 4 Function | Collector; pin configuration |
| Current Transfer Ratio | 50-600 %; IF=5 mA, VCE=5 V |
| Isolation Voltage | 3750 Vrms; AC for 1 minute, RH=40-60%, pins 1 and 2 shorted, pins 3 and 4 shorted |
| Input Forward Current | 50 mA max; absolute maximum rating, Ta=25°C |
| Peak Forward Current | 1 A max; 1 us pulse, absolute maximum rating, Ta=25°C |
| Input Reverse Voltage | 6 V max; absolute maximum rating, Ta=25°C |
| Input Power Dissipation | 70 mW max; absolute maximum rating, Ta=25°C |
| Input Power Derating Factor | 2.9 mW/°C; about Ta=100°C |
| Output Power Dissipation | 150 mW max; absolute maximum rating, Ta=25°C |
| Output Power Derating Factor | 3.7 mW/°C; above Ta=70°C |
| Collector Current | 50 mA max; absolute maximum rating, Ta=25°C |
| Collector-Emitter Voltage | 80 V max; absolute maximum rating, Ta=25°C |
| Emitter-Collector Voltage | 7 V max; absolute maximum rating, Ta=25°C |
| Total Power Dissipation | 200 mW max; absolute maximum rating, Ta=25°C |
| Operating Temperature | -55 to +110 °C; absolute maximum rating |
| Storage Temperature | -55 to +125 °C; absolute maximum rating |
| Soldering Temperature | 260 °C max; for 10 seconds |
| Forward Voltage | 1.2 V typ, 1.4 V max; IF=20 mA, Ta=25°C |
| Reverse Current | 10 µA max; VR=4 V, Ta=25°C |
| Input Capacitance | 30 pF typ, 250 pF max; V=0 V, f=1 kHz, Ta=25°C |
| Collector-Emitter Dark Current | 100 nA max; VCE=20 V, IF=0 mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | 80 V min; IC=0.1 mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | 7 V min; IE=0.01 mA, Ta=25°C |
| Current Transfer Ratio EL357N | 50-600 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357NA | 80-160 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357NB | 130-260 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357NC | 200-400 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357ND | 300-600 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357NE | 100-200 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio EL357NF | 150-300 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | 0.1 V typ, 0.2 V max; IF=20 mA, IC=1 mA, Ta=25°C |
| Isolation Resistance | 5×10^10 Ω min; VIO=500 Vdc, RH=40-60%, Ta=25°C |
| Floating Capacitance | 0.6 pF typ, 1.0 pF max; VIO=0 V, f=1 MHz, Ta=25°C |
| Rise Time | 3 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall Time | 4 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard Tube Packing Quantity | 100 units per tube; standard SMD option or standard SMD option + VDE |
| Tape and Reel Packing Quantity | 3000 units per reel; TA, TB, TA-V, or TB-V tape and reel options |
| Tape Dimension A | 4.4 ±0.1 mm; tape and reel packing specification |
| Tape Dimension B | 7.4 ±0.1 mm; tape and reel packing specification |
| Tape Dimension W | 16.0 ±0.2 mm; tape and reel packing specification |
| Reflow Peak Temperature | 260 °C; maximum body case temperature profile, IPC/JEDEC J-STD-020D reference |
| Reflow Times | 3 times; maximum body case temperature profile |
| Datasheet Status | request_only |
Product Overview
EL_EL357N-G is an EVERLIGHT phototransistor photocoupler in the LED category. Its internal structure consists of an infrared emitting diode optically coupled to a phototransistor detector. The pin configuration assigns pin 1 as anode, pin 2 as cathode, pin 3 as emitter, and pin 4 as collector.
The device is housed in a 4-pin SOP SMD package with a 2.0 mm profile. Electrical limits include 50 mA maximum input forward current, 1 A maximum peak forward current for a 1 µs pulse, 6 V maximum input reverse voltage, 80 V maximum collector-emitter voltage, and 7 V maximum emitter-collector voltage. The operating temperature range is -55 to +110 °C, with storage from -55 to +125 °C.
Performance characteristics include 50-600% current transfer ratio at IF=5 mA and VCE=5 V, 1.2 V typical forward voltage at IF=20 mA, 100 nA maximum collector-emitter dark current, 0.1 V typical collector-emitter saturation voltage, and 3 µs typical rise time. Isolation characteristics include 3750 Vrms isolation voltage, 5×10^10 Ω minimum isolation resistance, and 0.6 pF typical floating capacitance.
Key Features
- Infrared LED optically coupled to phototransistor detector
- 4-pin SOP SMD package with 2.0 mm profile
- 50-600% current transfer ratio at IF=5 mA
- 3750 Vrms isolation voltage for one minute
- 80 V collector-emitter voltage maximum rating
- 50 mA maximum input forward current rating
- 1.2 V typical forward voltage at IF=20 mA
- 100 nA maximum collector-emitter dark current
- 3 µs typical rise time under specified load
- 260 °C reflow peak temperature, three times
Typical Applications
- Isolated signal coupling
- Phototransistor output interfaces
- SMD isolation circuits
- Low-power control inputs
- Collector-output switching stages
- Temperature-rated electronic assemblies
- Tape-and-reel production builds
Procurement Notes
When requesting a quote for EL_EL357N-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is EL_EL357N-G?
EL_EL357N-G is a phototransistor photocoupler from EVERLIGHT. The extracted datasheet facts describe an infrared emitting diode optically coupled to a phototransistor detector in a 4-pin SOP SMD package.
What isolation voltage is specified for EL_EL357N-G?
The isolation voltage is specified as 3750 Vrms for AC testing during 1 minute, with RH=40-60%, pins 1 and 2 shorted, and pins 3 and 4 shorted.
What current transfer ratio range applies to EL357N?
For EL357N, the current transfer ratio is listed as 50-600% at IF=5 mA, VCE=5 V, and Ta=25°C. Additional EL357N grade ranges are also specified for A through F variants.
What are the pin functions of the EL_EL357N-G package?
The pin configuration assigns pin 1 to anode, pin 2 to cathode, pin 3 to emitter, and pin 4 to collector, matching the infrared diode input and phototransistor output structure.
What assembly temperature limits are listed?
The extracted facts list a 260 °C maximum soldering temperature for 10 seconds. The reflow peak temperature is also 260 °C, with a maximum body case temperature profile allowing 3 reflow times.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.