Specifications
| Type | Description |
|---|---|
| Part Number | EL_EL3H4-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin SSOP small outline SMD package; package dimensions in mm referenced but numeric body dimensions not visible in provided text |
| Input Structure | Two infrared emitting diodes connected in inverse parallel; optically coupled to phototransistor |
| Output Structure | Phototransistor; encapsulated with green compound |
| Pin 1 Function | Anode / Cathode; AC input configuration |
| Pin 2 Function | Cathode / Anode; AC input configuration |
| Pin 3 Function | Emitter; phototransistor output |
| Pin 4 Function | Collector; phototransistor output |
| Forward Current | ±50 mA; absolute maximum rating, Ta=25°C |
| Peak Forward Current | 1 A; t=10 µs, absolute maximum rating, Ta=25°C |
| Input Power Dissipation | 70 mW; no derating required up to Ta=100°C |
| Output Power Dissipation | 150 mW; absolute maximum rating, Ta=25°C |
| Output Power Dissipation Derating Factor | 3.7 mW/°C; above Ta=80°C |
| Collector-Emitter Voltage | 80 V; absolute maximum rating, Ta=25°C |
| Emitter-Collector Voltage | 6 V; absolute maximum rating, Ta=25°C |
| Total Power Dissipation | 200 mW; absolute maximum rating, Ta=25°C |
| Isolation Voltage | 3750 Vrms; AC for 1 minute, R.H.=40-60%; pins 1-2 shorted together and pins 3-4 shorted together |
| Operating Temperature | -55 to 100 °C; absolute maximum rating |
| Storage Temperature | -55 to 125 °C; absolute maximum rating |
| Soldering Temperature | 260 °C; for 10 seconds |
| Forward Voltage | Typ 1.2 V, Max 1.4 V; IF=±20 mA, Ta=25°C |
| Input Capacitance | Typ 50 pF, Max 250 pF; V=0, f=1 kHz, Ta=25°C |
| Collector-Emitter Dark Current | Max 100 nA; VCE=20 V, IF=0 mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | Min 80 V; IC=0.1 mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | Min 6 V; IE=0.01 mA, Ta=25°C |
| Current Transfer Ratio, EL3H4 | Min 20%, Max 300%; IF=±1 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio, EL3H4A | Min 50%, Max 150%; IF=±1 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio, EL3H4B | Min 100%, Max 300%; IF=±1 mA, VCE=5 V, Ta=25°C |
| CTR Symmetry | Min 0.5, Max 2.0; IF=±1 mA, VCE=5 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | Typ 0.1 V, Max 0.2 V; IF=±20 mA, IC=1 mA, Ta=25°C |
| Isolation Resistance | Min 5×10^10 Ω, Typ 10^11 Ω; VIO=500 Vdc, 40-60% R.H., Ta=25°C |
| Floating Capacitance | Typ 0.6 pF, Max 1.0 pF; VIO=0, f=1 MHz, Ta=25°C |
| Rise Time | Max 18 µs; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall Time | Max 18 µs; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard Tube Packing Quantity | 150 units per tube; option None or -V |
| Tape and Reel Packing Quantity | 5000 units per reel; options TA, TB, TA-V, TB-V |
| Tape and Reel Packing Quantity | 1000 units per reel; options EA, EB, EA-V, EB-V |
| Tape Dimension A0 | 3.00 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension B0 | 7.45 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension D0 | 1.50 +0.1/-0 mm; tape and reel packing specification |
| Tape Dimension D1 | 1.50 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension E | 1.75 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension F | 5.50 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension P0 | 4.00 ± 0.15 mm; tape and reel packing specification |
| Tape Dimension P1 | 4.00 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension P2 | 2.00 ± 0.10 mm; tape and reel packing specification |
| Tape Thickness | 0.30 ± 0.05 mm; tape dimension t |
| Tape Width | 12.1 ± 0.2 mm; tape dimension W |
| Tape Dimension K0 | 2.45 ± 0.1 mm; tape and reel packing specification |
| Reflow Preheat Minimum Temperature | 150 °C; Tsmin, reflow profile reference IPC/JEDEC J-STD-020D |
| Reflow Preheat Maximum Temperature | 200 °C; Tsmax, reflow profile reference IPC/JEDEC J-STD-020D |
| Reflow Preheat Time | 60-120 seconds; time from Tsmin to Tsmax |
| Reflow Ramp-Up Rate | 3 °C/second max; Tsmax to Tp |
| Reflow Liquidus Temperature | 217 °C; TL |
| Reflow Time Above Liquidus | 60-100 seconds; tL |
| Reflow Peak Temperature | 260 °C; Tp |
| Time Within 5°C of Peak Temperature | 30 seconds; Tp - 5°C |
| Reflow Ramp-Down Rate | 6 °C/second max; from peak temperature |
| Time From 25°C to Peak Temperature | 8 minutes max; reflow profile |
| Reflow Times | 3 times; maximum reflow cycles |
| Datasheet Status | request_only |
Product Overview
EVERLIGHT EL_EL3H4-G is an AC input phototransistor photocoupler classified in the LED category. The input side consists of two infrared emitting diodes connected in inverse parallel, optically coupled to a phototransistor output encapsulated with green compound. Pin 1 is Anode/Cathode, pin 2 is Cathode/Anode, pin 3 is the emitter, and pin 4 is the collector.
Key Features
- AC input photocoupler with inverse-parallel infrared emitting diodes
- Phototransistor output encapsulated with green compound
- 4-pin SSOP small outline SMD package
- 3750 Vrms isolation voltage for one minute
- ±50 mA absolute maximum forward current rating
- 80 V collector-emitter absolute maximum rating
- CTR symmetry range from 0.5 to 2.0
- Maximum 18 µs rise and fall times
- 260 °C soldering temperature for 10 seconds
- Supports up to three reflow cycles
Typical Applications
- AC input signal isolation
- Phototransistor output interfacing
- Compact SMD isolation circuits
- Bidirectional input detection
- Control signal isolation
- Low capacitance isolation paths
- Reflow-assembled circuit boards
Procurement Notes
When requesting a quote for EL_EL3H4-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is EL_EL3H4-G?
EL_EL3H4-G is an EVERLIGHT AC input phototransistor photocoupler in the LED category. Its input uses two infrared emitting diodes connected in inverse parallel and optically coupled to a phototransistor output.
What package is specified for EL_EL3H4-G?
The device is described as a 4-pin SSOP small outline SMD package. Numeric package body dimensions are referenced in millimeters in the source, but they are not visible in the provided extracted text.
What isolation voltage does EL_EL3H4-G support?
The extracted datasheet facts specify 3750 Vrms isolation voltage for AC applied for 1 minute at 40-60% relative humidity, with pins 1-2 shorted together and pins 3-4 shorted together.
What are the main output-side voltage ratings?
The output-side absolute maximum ratings include 80 V collector-emitter voltage and 6 V emitter-collector voltage at Ta=25°C. Electrical characteristics also list minimum breakdown voltages of 80 V and 6 V respectively.
What reflow limits are listed for this part?
The reflow profile lists 150-200°C preheat for 60-120 seconds, 217°C liquidus, 60-100 seconds above liquidus, 260°C peak temperature, and a maximum of three reflow cycles.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.