Specifications
| Type | Description |
|---|---|
| Part Number | EL_EL8171-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin DIP; standard DIP-4, wide lead bend 0.4 inch spacing, surface mount S/S1 options |
| Device Function | Infrared emitting diode optically coupled to phototransistor detector |
| Pin 1 Function | Anode |
| Pin 2 Function | Cathode |
| Pin 3 Function | Emitter |
| Pin 4 Function | Collector |
| Current Transfer Ratio | 100-350 % at IF=0.5 mA, VCE=5 V, Ta=25°C |
| Isolation Voltage | 5000 Vrms, AC for 1 minute, RH=40-60%, Ta=25°C |
| Creepage Distance | >7.62 mm |
| Input Forward Current | 10 mA max at Ta=25°C |
| Input Reverse Voltage | 6 V max at Ta=25°C |
| Input Power Dissipation | 20 mW max at Ta=25°C |
| Output Power Dissipation | 150 mW max at Ta=25°C |
| Collector Current | 50 mA max at Ta=25°C |
| Collector-Emitter Voltage | 70 V max at Ta=25°C |
| Emitter-Collector Voltage | 6 V max at Ta=25°C |
| Total Power Dissipation | 170 mW max at Ta=25°C |
| Operating Temperature | -30 to +100 °C |
| Storage Temperature | -55 to +125 °C |
| Soldering Temperature | 260 °C max for 10 seconds |
| Forward Voltage | 1.2 V typ, 1.4 V max at IF=10 mA, Ta=25°C |
| Reverse Current | 10 µA max at VR=4 V, Ta=25°C |
| Input Capacitance | 250 pF max at V=0 V, f=1 kHz, Ta=25°C |
| Collector-Emitter Dark Current | 100 nA max at VCE=20 V, IF=0 mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | 70 V min at IC=0.1 mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | 6 V min at IE=0.1 mA, Ta=25°C |
| Collector-Emitter Saturation Voltage | 0.2 V max at IF=10 mA, IC=1 mA, Ta=25°C |
| Isolation Resistance | 5×10^10 Ω min at VIO=500 Vdc, RH=40-60%, Ta=25°C |
| Floating Capacitance | 1.0 pF max at VIO=0 V, f=1 MHz, Ta=25°C |
| Cut-off Frequency | 80 kHz typ at VCE=5 V, IC=2 mA, RL=100 Ω, -3 dB, Ta=25°C |
| Rise Time | 18 µs max at VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall Time | 18 µs max at VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard DIP Packing Quantity | 100 units per tube, option none, standard DIP-4 |
| Wide Lead Bend Packing Quantity | 100 units per tube, option M, 0.4 inch spacing |
| Surface Mount Tape Reel Quantity | 1000 units per reel for S(TA), S(TB), S1(TA), or S1(TB) options |
| Surface Mount Tape Reel Quantity | 1500 units per reel for S(TU), S(TD), S1(TU), or S1(TD) options |
| Reflow Peak Temperature | 260 °C maximum body case temperature profile, IPC/JEDEC J-STD-020D reference |
| Reflow Times | 3 times maximum body case temperature profile |
| Datasheet Status | request_only |
Product Overview
EL_EL8171-G is an EVERLIGHT phototransistor photocoupler in the LED category. Its internal function is an infrared emitting diode optically coupled to a phototransistor detector, providing input-to-output signal transfer through optical coupling. The pin configuration assigns pin 1 as anode, pin 2 as cathode, pin 3 as emitter, and pin 4 as collector.
The device is specified with 5000 Vrms isolation voltage for 1 minute under the stated datasheet test conditions and an isolation resistance of 5×10^10 Ω minimum at VIO=500 Vdc. Creepage distance is greater than 7.62 mm. Current transfer ratio is 100-350% at IF=0.5 mA, VCE=5 V, and Ta=25°C.
Package options include standard DIP-4, wide lead bend with 0.4 inch spacing, and surface mount S/S1 options. Packing data covers 100 units per tube for standard DIP and wide lead bend versions, plus surface mount tape reel quantities of 1000 or 1500 units per reel depending on option. Assembly ratings include 260°C soldering for 10 seconds and a 260°C reflow peak profile up to 3 times.
Key Features
- Infrared emitting diode coupled to phototransistor detector
- 5000 Vrms isolation voltage for one minute
- Current transfer ratio of 100-350 percent
- Creepage distance greater than 7.62 mm
- Collector-emitter voltage rating of 70 V max
- Operating temperature range from -30 to +100 °C
- Rise and fall times rated 18 µs max
- Cut-off frequency specified at 80 kHz typical
- DIP-4 and surface mount S/S1 package options
- 260 °C reflow peak temperature, three times
Typical Applications
- Optically isolated signal coupling
- Input-to-output galvanic separation
- Phototransistor detector interface circuits
- DIP-4 isolation board designs
- Surface mount optocoupler assemblies
- Low-current LED input isolation
- Collector-output switching interfaces
Procurement Notes
When requesting a quote for EL_EL8171-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is EL_EL8171-G?
EL_EL8171-G is an EVERLIGHT phototransistor photocoupler. The datasheet describes it as an infrared emitting diode optically coupled to a phototransistor detector, with anode, cathode, emitter, and collector pins.
What isolation voltage is specified for EL_EL8171-G?
The specified isolation voltage is 5000 Vrms. The datasheet condition is AC for 1 minute at Ta=25°C, with RH=40-60%, pins 1 and 2 shorted, and pins 3 and 4 shorted.
What package options are listed for this photocoupler?
The package information lists 4-pin DIP options, including standard DIP-4, wide lead bend with 0.4 inch spacing, and surface mount S/S1 options. Tube and tape reel packing quantities are also specified.
What current transfer ratio does EL_EL8171-G provide?
The current transfer ratio is specified as 100-350% under the datasheet test condition of IF=0.5 mA, VCE=5 V, and Ta=25°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.