Specifications
| Type | Description |
|---|---|
| Part Number | EL_EL817-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin DIP package; standard DIP-4, wide-lead bend M option 0.4 inch spacing, SMD lead form S1/S2 options |
| Device structure | Infrared emitting diode optically coupled to phototransistor detector; EL817-G series description |
| Pin 1 function | Anode; pin configuration |
| Pin 2 function | Cathode; pin configuration |
| Pin 3 function | Emitter; pin configuration |
| Pin 4 function | Collector; pin configuration |
| Current Transfer Ratio range | 50-600 %; IF=5 mA, VCE=5 V |
| Isolation voltage | 5000 Vrms; input-output isolation, AC 1 minute, RH=40-60%, pins 1-2 shorted and pins 3-4 shorted |
| Creepage distance | >7.62 mm; between input and output |
| Operating temperature | -55 to 110 °C; absolute maximum rating |
| Storage temperature | -55 to 125 °C; absolute maximum rating |
| Forward current | 60 mA max; Ta=25°C absolute maximum rating |
| Peak forward current | 1 A max; 1 us pulse, Ta=25°C absolute maximum rating |
| Reverse voltage | 6 V max; input, Ta=25°C absolute maximum rating |
| Input power dissipation | 100 mW max; Ta=25°C absolute maximum rating |
| Input power dissipation derating factor | 2.9 mW/°C; above Ta=100°C |
| Output power dissipation | 150 mW max; Ta=25°C absolute maximum rating |
| Output power dissipation derating factor | 5.8 mW/°C; above Ta=100°C |
| Collector current | 50 mA max; output, Ta=25°C absolute maximum rating |
| Collector-emitter voltage | 80 V max; output, Ta=25°C absolute maximum rating |
| Emitter-collector voltage | 7 V max; output, Ta=25°C absolute maximum rating |
| Total power dissipation | 200 mW max; Ta=25°C absolute maximum rating |
| Soldering temperature | 260 °C max; for 10 seconds |
| Forward voltage | 1.2 V typ, 1.4 V max; IF=20 mA, Ta=25°C |
| Reverse current | 10 µA max; VR=4 V, Ta=25°C |
| Input capacitance | 30 pF typ, 250 pF max; V=0, f=1 kHz, Ta=25°C |
| Collector-emitter dark current | 100 nA max; VCE=20 V, IF=0 mA, Ta=25°C |
| Collector-emitter breakdown voltage | 80 V min; IC=0.1 mA, Ta=25°C |
| Emitter-collector breakdown voltage | 7 V min; IE=0.1 mA, Ta=25°C |
| CTR rank EL817 | 50-600 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817A | 80-160 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817B | 130-260 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817C | 200-400 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817D | 300-600 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817X | 100-200 %; IF=5 mA, VCE=5 V, Ta=25°C |
| CTR rank EL817Y | 150-300 %; IF=5 mA, VCE=5 V, Ta=25°C |
| Collector-emitter saturation voltage | 0.1 V typ, 0.2 V max; IF=20 mA, IC=1 mA, Ta=25°C |
| Isolation resistance | 5×10^10 Ω min; VIO=500 Vdc, RH=40-60%, Ta=25°C |
| Floating capacitance | 0.6 pF typ, 1.0 pF max; VIO=0, f=1 MHz, Ta=25°C |
| Cut-off frequency | 80 kHz typ; VCE=5 V, IC=2 mA, RL=100 Ω, -3 dB, Ta=25°C |
| Rise time | 6 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall time | 8 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard DIP packing quantity | 100 units per tube; option none, standard DIP-4 |
| M option packing quantity | 100 units per tube; wide lead bend, 0.4 inch spacing |
| S1 tape and reel packing quantity | 1500 units per reel; surface mount lead form, TU or TD tape and reel option |
| S2 tape and reel packing quantity | 2000 units per reel; surface mount lead form, TU or TD tape and reel option |
| Tape dimension Ao | 4.90±0.1 mm for S1; 4.88±0.1 mm for S2; tape and reel packing specifications |
| Tape dimension Bo | 10.40±0.1 mm for S1; 12.55±0.1 mm for S2; tape and reel packing specifications |
| Tape dimension W | 16.00±0.3 mm for S1; 24.00±0.3 mm for S2; tape and reel packing specifications |
| Reflow preheat temperature | 150-200 °C; Tsmin to Tsmax, IPC/JEDEC J-STD-020D reference |
| Reflow preheat time | 60-120 seconds; Tsmin to Tsmax |
| Reflow liquidus temperature | 217 °C; TL |
| Reflow time above liquidus | 60-100 seconds; tL |
| Reflow peak temperature | 260 °C; TP |
| Reflow cycles | 3 times; maximum reflow times |
| Datasheet Status | request_only |
Product Overview
The EL_EL817-G supports a 50-600% current transfer ratio at IF=5 mA and VCE=5 V. Input-output isolation is rated at 5000 Vrms for AC 1 minute with pins 1-2 shorted and pins 3-4 shorted, and creepage distance between input and output is greater than 7.62 mm. Operating temperature is -55 to 110 °C, with storage temperature from -55 to 125 °C.
The package options include standard DIP-4, a wide-lead bend M option with 0.4 inch spacing, and SMD S1/S2 lead forms. Assembly data includes 260 °C soldering for 10 seconds, reflow preheat from 150-200 °C for 60-120 seconds, 217 °C liquidus temperature, 60-100 seconds above liquidus, 260 °C peak reflow temperature, and up to 3 reflow cycles. These facts support use in isolated signal coupling, DIP board mounting, and SMD tape-and-reel assembly workflows.
Key Features
- Infrared emitting diode coupled to phototransistor detector
- 4-pin DIP package with S1 and S2 SMD options
- 50-600% CTR at IF=5 mA, VCE=5 V
- 5000 Vrms input-output isolation for AC 1 minute
- Creepage distance greater than 7.62 mm
- -55 to 110 °C operating temperature range
- 80 V minimum collector-emitter breakdown voltage
- 0.1 V typical collector-emitter saturation voltage
- 80 kHz typical cut-off frequency
- 260 °C peak reflow temperature, maximum 3 cycles
Typical Applications
- Input-output signal isolation
- Phototransistor signal coupling
- DIP-4 through-hole assemblies
- Wide-lead 0.4 inch layouts
- S1 surface-mount assemblies
- S2 surface-mount assemblies
- Tape-and-reel SMT assembly
- Isolated low-frequency signal interfaces
Procurement Notes
When requesting a quote for EL_EL817-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What device structure does EL_EL817-G use?
EL_EL817-G uses an infrared emitting diode optically coupled to a phototransistor detector. The input pins are anode and cathode, while the output pins are emitter and collector.
What isolation rating is specified for EL_EL817-G?
The input-output isolation voltage is 5000 Vrms for AC 1 minute, measured with pins 1-2 shorted and pins 3-4 shorted under RH=40-60% conditions.
What package and lead-form options are listed?
The device is listed in a 4-pin DIP package, including standard DIP-4, wide-lead bend M with 0.4 inch spacing, and SMD lead-form options S1 and S2.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.