Specifications
| Type | Description |
|---|---|
| Part Number | EL_EL3H7-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | 4-pin SSOP SMD, 2.0 mm profile |
| Device Function | Infrared emitting diode optically coupled to phototransistor detector; EL3H7-G series description |
| Pin Configuration | 1=Anode, 2=Cathode, 3=Emitter, 4=Collector; 4-pin package |
| Isolation Voltage | 3750 Vrms; AC for 1 minute, RH=40-60%, pins 1-2 shorted and pins 3-4 shorted |
| Input Forward Current | 50 mA max; Ta=25°C absolute maximum rating |
| Input Peak Forward Current | 1 A max; 1 µs pulse, Ta=25°C absolute maximum rating |
| Input Reverse Voltage | 6 V max; Ta=25°C absolute maximum rating |
| Input Power Dissipation | 70 mW max; Ta=25°C absolute maximum rating |
| Input Power Dissipation Derating | 2.0 mW/°C; above Ta=90°C |
| Output Power Dissipation | 150 mW max; Ta=25°C absolute maximum rating |
| Output Power Dissipation Derating | 3.1 mW/°C; above Ta=70°C |
| Output Collector Current | 50 mA max; Ta=25°C absolute maximum rating |
| Collector-Emitter Voltage | 80 V max; Ta=25°C absolute maximum rating |
| Emitter-Collector Voltage | 7 V max; Ta=25°C absolute maximum rating |
| Total Power Dissipation | 200 mW max; Ta=25°C absolute maximum rating |
| Operating Temperature | -55 to +110 °C; absolute maximum rating |
| Storage Temperature | -55 to +125 °C; absolute maximum rating |
| Soldering Temperature | 260 °C max; for 10 seconds |
| Forward Voltage | 1.2 V typ, 1.4 V max; IF=20 mA, Ta=25°C |
| Reverse Current | 10 µA max; VR=4 V, Ta=25°C |
| Input Capacitance | 30 pF typ, 250 pF max; V=0 V, f=1 kHz, Ta=25°C |
| Collector-Emitter Dark Current | 100 nA max; VCE=20 V, IF=0 mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | 80 V min; IC=0.1 mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | 7 V min; IE=0.1 mA, Ta=25°C |
| Current Transfer Ratio | 50-600%; EL3H7, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank A | 80-160%; EL3H7A, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank B | 130-260%; EL3H7B, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank C | 200-400%; EL3H7C, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank D | 300-600%; EL3H7D, IF=5 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank E | 100-200%; EL3H7E, IF=10 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank F | 150-300%; EL3H7F, IF=10 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank H | 40-80%; EL3H7H, IF=10 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank I | 63-125%; EL3H7I, IF=10 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank J | 100-200%; EL3H7J, IF=10 mA, VCE=5 V, Ta=25°C |
| Current Transfer Ratio Rank K | 160-320%; EL3H7K, IF=10 mA, VCE=5 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | 0.1 V typ, 0.2 V max; IF=10 mA, IC=1 mA, Ta=25°C |
| Isolation Resistance | 5×10^10 Ω min; VIO=500 Vdc, RH=40-60%, Ta=25°C |
| Floating Capacitance | 0.3 pF typ, 1.0 pF max; VIO=0 V, f=1 MHz, Ta=25°C |
| Rise Time | 5 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Fall Time | 3 µs typ, 18 µs max; VCE=2 V, IC=2 mA, RL=100 Ω, Ta=25°C |
| Standard Tube Packing Quantity | 150 units per tube; standard SMD option, with or without VDE option |
| Tape and Reel Packing Quantity TA/TB | 5000 units per reel; TA/TB tape and reel options, with or without VDE option |
| Tape and Reel Packing Quantity EA/EB | 1000 units per reel; EA/EB tape and reel options, with or without VDE option |
| Tape Dimension A0 | 3.00 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension B0 | 7.45 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension D0 | 1.50 +0.1/-0 mm; tape and reel packing specification |
| Tape Dimension D1 | 1.50 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension E | 1.75 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension F | 5.50 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension P0 | 4.00 ± 0.15 mm; tape and reel packing specification |
| Tape Dimension P1 | 4.00 ± 0.10 mm; tape and reel packing specification |
| Tape Dimension P2 | 2.00 ± 0.10 mm; tape and reel packing specification |
| Tape Thickness | 0.30 ± 0.05 mm; tape dimension t |
| Tape Width | 12.1 ± 0.2 mm; tape dimension W |
| Tape Dimension K0 | 2.45 ± 0.1 mm; tape and reel packing specification |
| Reflow Preheat Temperature | 150-200 °C; Tsmin to Tsmax |
| Reflow Preheat Time | 60-120 seconds; time from Tsmin to Tsmax |
| Reflow Ramp-Up Rate | 3 °C/second max; from Tsmax to Tp |
| Reflow Liquidus Temperature | 217 °C; TL |
| Reflow Time Above Liquidus | 60-100 seconds; tL above TL |
| Reflow Peak Temperature | 260 °C; Tp |
| Time Within 5°C of Peak | 30 seconds; Tp - 5°C |
| Reflow Ramp-Down Rate | 6 °C/second max; from peak temperature |
| Time From 25°C to Peak | 8 minutes max; reflow profile |
| Reflow Cycles | 3 times; maximum reflow times |
| Datasheet Status | request_only |
Product Overview
The EL_EL3H7-G is an EVERLIGHT phototransistor photocoupler in the LED category. Its internal structure is an infrared emitting diode optically coupled to a phototransistor detector, providing isolated signal transfer through an optical path. The 4-pin configuration assigns pin 1 to anode, pin 2 to cathode, pin 3 to emitter, and pin 4 to collector.
The device is supplied in a 4-pin SSOP SMD package with a 2.0 mm profile. Electrical limits include 3750 Vrms isolation voltage, 50 mA maximum input forward current, 1 A peak forward current for a 1 µs pulse, 80 V maximum collector-emitter voltage, and 7 V maximum emitter-collector voltage. At IF=20 mA, forward voltage is specified as 1.2 V typical and 1.4 V maximum.
Phototransistor output behavior is defined by CTR ranges and switching parameters. The base EL3H7 CTR range is 50-600% at IF=5 mA and VCE=5 V, with multiple rank options listed for tighter ranges. Rise time is 5 µs typical and 18 µs maximum, while fall time is 3 µs typical and 18 µs maximum under the stated load condition. Assembly data includes tube and tape-and-reel packing options and a 260 °C peak reflow profile for up to 3 cycles.
Key Features
- Infrared LED optically coupled to phototransistor detector
- 4-pin SSOP SMD package with 2.0 mm profile
- 3750 Vrms isolation voltage for one minute
- 50 mA maximum input forward current at 25°C
- 80 V collector-emitter voltage absolute maximum rating
- CTR range of 50-600% for base EL3H7
- 5 µs typical rise time and 3 µs typical fall time
- -55 to +110°C operating temperature range
- 260°C peak reflow profile with three cycles maximum
- Tape-and-reel options support 1000 or 5000 units
Typical Applications
- Isolated digital signal coupling
- Phototransistor output interfaces
- SMD optocoupler board assemblies
- Collector-emitter switching circuits
- Low-capacitance isolation paths
- Tube-packed production builds
- Tape-and-reel automated assembly
Procurement Notes
When requesting a quote for EL_EL3H7-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is EL_EL3H7-G?
EL_EL3H7-G is an EVERLIGHT phototransistor photocoupler in the LED category. It contains an infrared emitting diode optically coupled to a phototransistor detector in a 4-pin SSOP SMD package.
What isolation voltage is specified for this photocoupler?
The specified isolation voltage is 3750 Vrms for AC applied for 1 minute. The condition shorts pins 1-2 together and pins 3-4 together, with relative humidity at 40-60%.
What are the EL_EL3H7-G pin assignments?
For the 4-pin package, pin 1 is the anode, pin 2 is the cathode, pin 3 is the emitter, and pin 4 is the collector.
What current transfer ratio ranges are listed?
The base EL3H7 current transfer ratio is 50-600% at IF=5 mA and VCE=5 V. Rank ranges include A through K options, with stated test conditions at Ta=25°C.
What reflow limits apply to EL_EL3H7-G?
The reflow profile lists 150-200°C preheat for 60-120 seconds, 217°C liquidus, 260°C peak temperature, and a maximum of 3 reflow cycles.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.