Specifications
| Type | Description |
|---|---|
| Part Number | EL357N-C-TA-G |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Inferred Category | LED |
| Component Type | Other |
| Package / Case | 4-pin SOP SMD, 2.0 mm profile |
| Device Description | Infrared emitting diode optically coupled to phototransistor detector; condition: EL357N-G series |
| Pin 1 Function | Anode; condition: Pin configuration |
| Pin 2 Function | Cathode; condition: Pin configuration |
| Pin 3 Function | Emitter; condition: Pin configuration |
| Pin 4 Function | Collector; condition: Pin configuration |
| Series Current Transfer Ratio | 50-600 %; condition: IF=5mA, VCE=5V |
| Isolation Voltage | 3750 Vrms; condition: Input to output |
| Input Forward Current | 50 mA max; condition: Ta=25°C absolute maximum rating |
| Input Peak Forward Current | 1 A max; condition: 1us pulse, Ta=25°C absolute maximum rating |
| Input Reverse Voltage | 6 V max; condition: Ta=25°C absolute maximum rating |
| Input Power Dissipation | 70 mW max; condition: Ta=25°C absolute maximum rating |
| Input Power Derating Factor | 2.9 mW/°C; condition: About Ta=100°C |
| Output Power Dissipation | 150 mW max; condition: Ta=25°C absolute maximum rating |
| Output Power Derating Factor | 3.7 mW/°C; condition: Above Ta=70°C |
| Output Collector Current | 50 mA max; condition: Ta=25°C absolute maximum rating |
| Collector-Emitter Voltage | 80 V max; condition: Ta=25°C absolute maximum rating |
| Emitter-Collector Voltage | 7 V max; condition: Ta=25°C absolute maximum rating |
| Total Power Dissipation | 200 mW max; condition: Ta=25°C absolute maximum rating |
| Isolation Voltage | 3750 Vrms; condition: AC for 1 minute, RH=40-60%, pins 1/2 shorted and pins 3/4 shorted |
| Operating Temperature | -55 to +110 °C; condition: Absolute maximum rating |
| Storage Temperature | -55 to +125 °C; condition: Absolute maximum rating |
| Soldering Temperature | 260 °C max; condition: 10 seconds |
| Forward Voltage | 1.2 V typ, 1.4 V max; condition: IF=20mA, Ta=25°C |
| Reverse Current | 10 µA max; condition: VR=4V, Ta=25°C |
| Input Capacitance | 30 pF typ, 250 pF max; condition: V=0, f=1kHz, Ta=25°C |
| Collector-Emitter Dark Current | 100 nA max; condition: VCE=20V, IF=0mA, Ta=25°C |
| Collector-Emitter Breakdown Voltage | 80 V min; condition: IC=0.1mA, Ta=25°C |
| Emitter-Collector Breakdown Voltage | 7 V min; condition: IE=0.01mA, Ta=25°C |
| Current Transfer Ratio | 50-600 %; condition: EL357N, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 80-160 %; condition: EL357NA, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 130-260 %; condition: EL357NB, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 200-400 %; condition: EL357NC / CTR rank C, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 300-600 %; condition: EL357ND, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 100-200 %; condition: EL357NE, IF=5mA, VCE=5V, Ta=25°C |
| Current Transfer Ratio | 150-300 %; condition: EL357NF, IF=5mA, VCE=5V, Ta=25°C |
| Collector-Emitter Saturation Voltage | 0.1 V typ, 0.2 V max; condition: IF=20mA, IC=1mA, Ta=25°C |
| Isolation Resistance | 5×10^10 Ω min; condition: VIO=500Vdc, RH=40-60%, Ta=25°C |
| Floating Capacitance | 0.6 pF typ, 1.0 pF max; condition: VIO=0, f=1MHz, Ta=25°C |
| Rise Time | 3 µs typ, 18 µs max; condition: VCE=2V, IC=2mA, RL=100Ω, Ta=25°C |
| Fall Time | 4 µs typ, 18 µs max; condition: VCE=2V, IC=2mA, RL=100Ω, Ta=25°C |
| Order Code CTR Rank | C; condition: Part number EL357N-C-TA-G |
| Packing Option | TA tape and reel; condition: Part number EL357N-C-TA-G |
| Tape and Reel Quantity | 3000 units per reel; condition: TA option |
| Standard Tube Quantity | 100 units per tube; condition: Standard SMD option |
| Tape Dimension A | 4.4 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension B | 7.4 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension Do | 1.5 +0.1/-0 mm; condition: Tape and reel packing specification |
| Tape Dimension D1 | 1.5 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension E | 1.75 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension F | 7.5 ± 0.05 mm; condition: Tape and reel packing specification |
| Tape Dimension Po | 4.0 ± 0.15 mm; condition: Tape and reel packing specification |
| Tape Dimension P1 | 8.0 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension P2 | 2.0 ± 0.1 mm; condition: Tape and reel packing specification |
| Tape Dimension t | 0.25 ± 0.03 mm; condition: Tape and reel packing specification |
| Tape Dimension W | 16.0 ± 0.2 mm; condition: Tape and reel packing specification |
| Tape Dimension K | 2.4 ± 0.1 mm; condition: Tape and reel packing specification |
| Reflow Preheat Temperature Minimum | 150 °C; condition: IPC/JEDEC J-STD-020D reference profile |
| Reflow Preheat Temperature Maximum | 200 °C; condition: IPC/JEDEC J-STD-020D reference profile |
| Reflow Preheat Time | 60-120 seconds; condition: Tsmin to Tsmax |
| Reflow Average Ramp-Up Rate | 3 °C/second max; condition: Tsmax to Tp |
| Reflow Liquidus Temperature | 217 °C; condition: TL |
| Reflow Time Above Liquidus | 60-100 seconds; condition: tL |
| Reflow Peak Temperature | 260 °C; condition: Tp |
| Reflow Time Within 5°C of Peak | 30 seconds; condition: Tp - 5°C |
| Reflow Ramp-Down Rate | 6 °C/second max; condition: From peak temperature |
| Reflow Time 25°C to Peak | 8 minutes max; condition: Reflow profile |
| Reflow Cycles | 3 times; condition: Reflow profile |
| Datasheet Status | request_only |
Product Overview
The EL357N-C-TA-G is an EVERLIGHT EL357N-G series phototransistor photocoupler. Its internal structure is an infrared emitting diode optically coupled to a phototransistor detector, with pin 1 as anode, pin 2 as cathode, pin 3 as emitter, and pin 4 as collector. The device is supplied in a 4-pin SOP SMD package with a 2.0 mm profile.
Electrical data from the manufacturer datasheet includes 3750 Vrms isolation voltage, 50-600 % series current transfer ratio at IF=5mA and VCE=5V, and order-code CTR rank C. For the C rank, CTR is specified as 200-400 % at IF=5mA, VCE=5V, and Ta=25°C. Input characteristics include 1.2 V typical and 1.4 V maximum forward voltage at IF=20mA, plus 10 µA maximum reverse current at VR=4V.
Assembly and packing details include TA tape-and-reel packing with 3000 units per reel. The referenced reflow profile specifies 150 to 200 °C preheat, 217 °C liquidus temperature, 260 °C peak temperature, and up to three reflow cycles.
Key Features
- Infrared emitting diode coupled to phototransistor detector
- 4-pin SOP SMD package with 2.0 mm profile
- Input-to-output isolation voltage rated 3750 Vrms
- CTR rank C specifies 200-400 % transfer ratio
- Forward voltage 1.2 V typical at IF=20mA
- Collector-emitter voltage rated 80 V maximum
- Operating temperature range -55 to +110 °C
- Rise time 3 µs typical, 18 µs maximum
- Fall time 4 µs typical, 18 µs maximum
- TA tape-and-reel packing, 3000 units per reel
Typical Applications
- Isolated signal coupling
- Phototransistor output switching
- SMD isolation interfaces
- CTR-ranked optocoupler designs
- Tape-and-reel assembly builds
- Reflow soldered control boards
Procurement Notes
When requesting a quote for EL357N-C-TA-G, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is EL357N-C-TA-G?
EL357N-C-TA-G is an EVERLIGHT phototransistor photocoupler. The datasheet describes it as an infrared emitting diode optically coupled to a phototransistor detector in a 4-pin SOP SMD package.
What CTR rank does EL357N-C-TA-G use?
The order code specifies CTR rank C. For EL357NC or CTR rank C, the datasheet lists a current transfer ratio of 200-400 % at IF=5mA, VCE=5V, and Ta=25°C.
What isolation rating is specified for this photocoupler?
The extracted datasheet facts list 3750 Vrms isolation voltage. One condition specifies input to output, and another specifies AC for 1 minute with pins 1/2 shorted and pins 3/4 shorted.
How is EL357N-C-TA-G packed for ordering?
The TA packing option is tape and reel. For the TA option, the datasheet specifies 3000 units per reel; the standard SMD tube quantity is listed separately as 100 units per tube.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.