Specifications
| Type | Description |
|---|---|
| Part Number | EL_ITR9909 |
| Manufacturer | EVERLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | Black thermoplastic opto interrupter housing; package dimensions shown in drawing, tolerances ±0.25 mm |
| Component Type | Sensor |
| Emitter chip material | GaAlAs; IR emitter |
| Emitter lens color | Blue; IR emitter |
| Phototransistor chip material | Silicon; PT output device |
| Phototransistor lens color | Black; PT output device |
| Input power dissipation | 75 mW; Ta=25°C or below, free air |
| Input reverse voltage | 5 V; Ta=25°C absolute maximum rating |
| Input forward current | 50 mA; Ta=25°C absolute maximum rating |
| Peak forward current | 1 A; pulse width ≤100 µs, duty cycle=1%; tw=100 µs, T=10 ms |
| Output collector power dissipation | 75 mW; Ta=25°C absolute maximum rating |
| Collector current | 50 mA; Ta=25°C absolute maximum rating |
| Collector-emitter voltage | 30 V; BVCEO, Ta=25°C absolute maximum rating |
| Emitter-collector voltage | 5 V; BVECO, Ta=25°C absolute maximum rating |
| Operating temperature | -25 to +85 °C; Topr |
| Storage temperature | -40 to +85 °C; Tstg |
| Lead soldering temperature | 260 °C; 1/16 inch from body for 5 seconds |
| Forward voltage | Typ 1.2 V, Max 1.5 V; IF=20 mA, Ta=25°C |
| Forward voltage | Typ 1.4 V, Max 1.85 V; IF=100 mA, tp=100 µs, tp/T=0.01, Ta=25°C |
| Forward voltage | Typ 2.6 V, Max 4.0 V; IF=1 A, tp=100 µs, tp/T=0.01, Ta=25°C |
| Reverse current | Max 10 µA; VR=5 V, Ta=25°C |
| Peak wavelength | Typ 940 nm; IF=20 mA, Ta=25°C |
| Dark current | Max 100 nA; VCE=20 V, Ee=0 mW/cm², Ta=25°C |
| Collector-emitter saturation voltage | Max 0.4 V; IC=2 mA, Ee=1 mW/cm², Ta=25°C |
| Collector current on-state | Min 200 µA; VCE=5 V, IF=20 mA, Ta=25°C |
| Rise time | Typ 15 µs; VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C |
| Fall time | Typ 15 µs; VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C |
| Forward voltage measurement uncertainty | ±0.1 V; electro-optical characteristics note |
| Luminous intensity measurement uncertainty | ±10%; electro-optical characteristics note |
| Dominant wavelength measurement uncertainty | ±1.0 nm; electro-optical characteristics note |
| Packing quantity | 150 pcs/bag, 5 bags/box, 10 boxes/carton |
| Datasheet Status | request_only |
Product Overview
EL_ITR9909 is an EVERLIGHT reflective opto interrupter sensor classified under the LED category. The device structure combines a GaAlAs IR emitter and a silicon phototransistor output device. The emitter lens is blue, while the phototransistor lens is black, supporting a paired optical sensing path in a single interrupter-style housing.
The package is a black thermoplastic opto interrupter housing with dimensions defined in the datasheet drawing and tolerances of ±0.25 mm. Absolute maximum ratings at Ta=25°C include 75 mW input power dissipation, 50 mA input forward current, 5 V input reverse voltage, 75 mW output collector power dissipation, 50 mA collector current, 30 V collector-emitter voltage, and 5 V emitter-collector voltage.
Electro-optical parameters include 940 nm typical peak wavelength, forward voltage ratings from 1.2 V typical at 20 mA to 2.6 V typical under 1 A pulsed drive, and maximum dark current of 100 nA. The device is specified for -25 to +85 °C operation, -40 to +85 °C storage, and 260 °C lead soldering for 5 seconds at 1/16 inch from the body.
Key Features
- GaAlAs IR emitter with blue lens
- Silicon phototransistor output device with black lens
- Black thermoplastic opto interrupter housing
- 940 nm typical peak wavelength at 20 mA
- 50 mA maximum input forward current rating
- 30 V collector-emitter voltage rating
- Minimum 200 µA on-state collector current
- Typical 15 µs rise and fall times
- -25 to +85 °C operating temperature range
- 260 °C lead soldering for 5 seconds
Typical Applications
- Reflective opto interruption sensing
- IR emitter and phototransistor sensing
- Reflective target detection circuits
- 940 nm infrared sensing designs
- Assemblies using lead soldering at 260 °C
Procurement Notes
When requesting a quote for EL_ITR9909, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
FAQ
What type of device is the EL_ITR9909?
EL_ITR9909 is an EVERLIGHT reflective opto interrupter sensor in the LED category. It combines a GaAlAs IR emitter and a silicon phototransistor output device in a black thermoplastic opto interrupter housing.
What are the main optical materials and lens colors?
The IR emitter uses a GaAlAs chip with a blue lens. The phototransistor output device uses a silicon chip with a black lens, according to the extracted datasheet facts.
What operating temperature range is specified?
The specified operating temperature range for EL_ITR9909 is -25 to +85 °C. The storage temperature range is -40 to +85 °C, both taken from the absolute maximum ratings.
What switching times are listed for this sensor?
The datasheet lists a typical rise time of 15 µs and a typical fall time of 15 µs, measured at VCE=5 V, IC=1 mA, RL=1000 Ω, and Ta=25°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.