Specifications
| Type | Description |
|---|---|
| Part Number | H5AG36EXNDX017N_SKhynix |
| Manufacturer | SK hynix |
| Product Type | DDR4 SDRAM |
| Category | Memory & Storage |
| Package/Case | 96ball FBGA; dimensions not provided in supplied pages |
| Decoded Part Number | H5AG36EXNDX017N |
| Datasheet Manufacturer | SK hynix |
| Memory Type | CMOS Double Data Rate IV SDRAM |
| Density | 8Gb |
| Organization | 512M x 16 |
| Package | 96ball FBGA |
| Serial Code | 017 |
| Core Supply Voltage | VDD = 1.2 V +/- 0.06 V |
| I/O Supply Voltage | VDDQ = 1.2 V +/- 0.06 V |
| Activation Supply Voltage | VPP = 2.5 V; min 2.375 V, max 2.75 V |
| Speed Grade | XN |
| Maximum Data Rate | DDR4-3200 / 3200 MT/s |
| Clock Cycle Time | tCK = 0.625 ns |
| CAS Latency | CL = 22 |
| Timing | CL-tRCD-tRP = 22-22-22 |
| tRCD | 13.75 ns |
| tRP | 13.75 ns |
| tRAS | 32 ns |
| tRC | 45.75 ns |
| Bank Count | 16 banks |
| Prefetch | 8-bit prefetch |
| Burst Length | Programmable burst length 4/8 |
| Refresh Cycle, Tcase 0C to 85C | 7.8 us |
| Refresh Cycle, Tcase 85C to 95C | 3.9 us |
| Temperature Grade | Commercial temperature |
| RoHS Compliance | RoHS compliant |
| Halogen-Free Status | Halogen-Free |
| Data Strobe | Differential DQS_t/DQS_c only |
| ODT Support | Dynamic On-Die Termination supported |
| Reset | Active-low asynchronous RESET_n |
| Datasheet Status | request_only |
Product Overview
H5AG36EXNDX017N_SKhynix is an 8Gb DDR4 SDRAM memory component. The extracted datasheet facts identify the base part as H5AG36EXNDX017N from the H5AG36EXNDXxxx family, with SK hynix branding in the manufacturer technical datasheet. The device is described as CMOS Double Data Rate IV SDRAM with 8-bit prefetch and 16 internal banks.
The memory organization is 512M x 16, supplied in a 96ball FBGA package. Package dimensions were not provided in the supplied pages. Operating supplies include VDD = 1.2 V +/- 0.06 V, VDDQ = 1.2 V +/- 0.06 V, and VPP = 2.5 V with a 2.375 V minimum and 2.75 V maximum.
The XN speed grade corresponds to DDR4-3200 at 3200 MT/s with tCK = 0.625 ns, CL = 22, and CL-tRCD-tRP = 22-22-22. Functional details include programmable burst length 4/8, differential DQS_t/DQS_c data strobe only, dynamic on-die termination support, and active-low asynchronous RESET_n.
Key Features
- 8Gb CMOS Double Data Rate IV SDRAM memory
- 512M x 16 organization in 96ball FBGA package
- XN speed grade supports DDR4-3200 operation
- 3200 MT/s maximum data rate
- CL-tRCD-tRP timing is 22-22-22
- VDD and VDDQ supplies are 1.2 V +/- 0.06 V
- VPP activation supply is 2.5 V nominal
- 16 banks with 8-bit prefetch architecture
- Programmable burst length 4 or 8
- Differential DQS_t/DQS_c data strobe only
- Dynamic on-die termination is supported
- Active-low asynchronous RESET_n input
Typical Applications
- DDR4 SDRAM memory designs
- 512M x 16 memory channels
- 3200 MT/s DDR4 interfaces
- Commercial temperature electronics
- Systems requiring 96ball FBGA memory
- Designs using differential DQS strobes
- Boards requiring RoHS compliant memory
Procurement Notes
When requesting a quote for H5AG36EXNDX017N_SKhynix, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For memory and storage sourcing, density, organization, speed grade, voltage, package, temperature grade, date code, lifecycle status and original packing condition should be verified before approval.
FAQ
What memory type is H5AG36EXNDX017N_SKhynix?
The supplied datasheet facts identify H5AG36EXNDX017N as an 8Gb CMOS Double Data Rate IV SDRAM device with a 512M x 16 organization and 16 internal banks.
What package is used for this DDR4 SDRAM?
The extracted ordering information lists the package as 96ball FBGA for the H5AG36EXNDXxxx x16 configuration. Package dimensions were not provided in the supplied pages.
What speed grade and timing apply to this part?
The XN speed grade corresponds to DDR4-3200 operation at 3200 MT/s. The listed timing is CL-tRCD-tRP = 22-22-22 with tCK = 0.625 ns.
What supply voltages are specified?
The core supply is VDD = 1.2 V +/- 0.06 V, the I/O supply is VDDQ = 1.2 V +/- 0.06 V, and the activation supply is VPP = 2.5 V with 2.375 V minimum and 2.75 V maximum.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.