XL-ITR1203 Infrared Through-Beam Photoelectric Switch

XINGLIGHT LED — specifications, applications, sourcing support and RFQ.

XL-ITR1203 Infrared Through-Beam Photoelectric Switch

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
XL-ITR1203
Manufacturer
XINGLIGHT
Package
Through-beam photoelectric switch package; outline dimensions shown in mm, tolerance ±0.3 mm unless otherwise specified
Category
LED
Product Type
SMD LED

Quick Sourcing Note

XL-ITR1203 from XINGLIGHT is an LED-category infrared through-beam photoelectric switch built with an infrared emission diode and an NPN silicon phototransistor. The devices are packaged side by side on a converging optical axis in a black thermoplastic shell, with outline dimensions specified in millimeters and ±0.3 mm tolerance unless otherwise noted. Key parameters include 940 nm peak wavelength, 50 mA continuous forward current, 35 V collector-emitter voltage, 20 mA collector current, and -25 to +85 °C operating temperature. The part supports object-detection and beam-interruption sensing designs that need paired emitter and phototransistor behavior in a through-beam package.

Specifications

TypeDescription
Part NumberXL-ITR1203
ManufacturerXINGLIGHT
Product TypeSMD LED
CategoryLED
Component TypeSensor
Package / CaseThrough-beam photoelectric switch package; outline dimensions shown in mm, tolerance ±0.3 mm unless otherwise specified
Device ConstructionInfrared emission diode and NPN silicon phototransistor; packaged side by side on converging optical axis in black thermoplastic shell
Peak Wavelength940 nm; IF=20 mA, Ta=25°C
Cut-off Visible Wavelengthλp=940 nm; characteristic listing
Input Emitter Power Dissipation75 mW; absolute maximum rating, Ta=25°C
Continuous Forward Current50 mA; input emitter absolute maximum rating, Ta=25°C
Peak Forward Current200 mA; pulse width ≤100 μs, duty cycle=1%, Ta=25°C
Reverse Voltage5 V; input emitter absolute maximum rating, Ta=25°C
Output Detector Power Dissipation75 mW; absolute maximum rating, Ta=25°C
Collector-Emitter Voltage35 V; output detector absolute maximum rating, Ta=25°C
Emitter-Collector Voltage5 V; output detector absolute maximum rating, Ta=25°C
Collector Current20 mA; output detector absolute maximum rating, Ta=25°C
Operating Temperature-25 to +85 °C; absolute maximum rating
Storage Temperature-40 to +85 °C; absolute maximum rating
Lead Soldering Temperature260 °C; soldering within 5 seconds, at least 2 mm from body
Forward VoltageTyp 1.2 V, Max 1.6 V; IF=20 mA, Ta=25°C
Forward VoltageTyp 1.4 V, Max 1.85 V; IF=100 mA pulse, Ta=25°C
Forward VoltageTyp 2.6 V, Max 4.0 V; IF=1 A pulse, Ta=25°C
Reverse CurrentMax 10 μA; VR=5 V, Ta=25°C
Dark CurrentMax 100 nA; Ee=0 mW/cm², VCE=20 V, Ta=25°C
Collector-Emitter Saturation VoltageMax 0.4 V; IC=2 mA, Ee=1 mW/cm², Ta=25°C
Rise TimeTyp 15 μs; VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C
Fall TimeTyp 15 μs; VCE=5 V, IC=1 mA, RL=1000 Ω, Ta=25°C
Collector Current IC(ON)Min 0.2 mA, Typ 0.5 mA, Max 0.95 mA; IF=20 mA, VCE=5 V, Ta=25°C
Voltage Grading CodeR2-4: Min 1.2 V, Max 1.6 V; IF=20 mA
Collector Current Grading CodeIC6-18: Min 0.3 mA, Max 0.9 mA; IF=20 mA, VCE=5 V
Moisture Sensitivity LevelMSL 2; characteristic listing
CompliancePb-free, RoHS compliant; characteristic listing
Recommended Wave Soldering Peak Temperature240±5 °C for 6 s; product recommended maximum soldering temperature
Wave Soldering LimitDo not perform more than once; wave peak welding guidance
Soldering Iron TemperatureLess than 300 °C for less than 3 s; per terminal, soldering iron capacity less than 25 W
Datasheet Statusrequest_only

Product Overview

XL-ITR1203 is a XINGLIGHT infrared through-beam photoelectric switch in the LED category. Its construction combines an infrared emission diode with an NPN silicon phototransistor, packaged side by side on a converging optical axis inside a black thermoplastic shell. The package drawing uses millimeter dimensions with ±0.3 mm tolerance unless otherwise specified.

The emitter is characterized at 940 nm peak wavelength at IF=20 mA and Ta=25°C. Absolute maximum ratings include 75 mW emitter power dissipation, 50 mA continuous forward current, 200 mA peak forward current under ≤100 μs pulse width and 1% duty cycle, and 5 V reverse voltage. The detector side is rated for 75 mW power dissipation, 35 V collector-emitter voltage, 5 V emitter-collector voltage, and 20 mA collector current.

Electrical behavior includes forward voltage options from low-current to pulse-drive conditions, max 10 μA reverse current, max 100 nA dark current, max 0.4 V collector-emitter saturation voltage, and typical 15 μs rise and fall times. Assembly guidance includes MSL 2, Pb-free/RoHS compliance, a 240±5 °C wave-soldering peak for 6 seconds, one wave-soldering pass maximum, and soldering iron limits below 300 °C for less than 3 seconds per terminal.

Key Features

  • Infrared emitter and NPN phototransistor construction
  • Side-by-side devices on converging optical axis
  • Black thermoplastic through-beam switch package
  • 940 nm peak wavelength at 20 mA
  • 50 mA continuous forward current rating
  • 35 V collector-emitter detector voltage rating
  • Typical 15 μs rise and fall times
  • Collector current IC(ON) up to 0.95 mA
  • Operating temperature range from -25 to +85 °C
  • MSL 2, Pb-free and RoHS compliant

Typical Applications

  • Through-beam object sensing
  • Beam interruption detection
  • Optical presence detection
  • Infrared slot-style sensing assemblies
  • Emitter-detector switching circuits
  • Object counting sensor modules

Procurement Notes

When requesting a quote for XL-ITR1203, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.

FAQ

What type of device is the XL-ITR1203?

XL-ITR1203 is an infrared through-beam photoelectric switch from XINGLIGHT. The device uses an infrared emission diode and an NPN silicon phototransistor packaged side by side on a converging optical axis in a black thermoplastic shell.

What wavelength does the XL-ITR1203 emitter use?

The extracted datasheet facts list a 940 nm peak wavelength at IF=20 mA and Ta=25°C. The characteristic listing also identifies λp=940 nm for the cut-off visible wavelength entry.

What soldering limits apply to XL-ITR1203?

The device has a lead soldering temperature rating of 260°C within 5 seconds at least 2 mm from the body. Recommended wave soldering is 240±5°C for 6 seconds, with no more than one wave-soldering pass.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 7, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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