Specifications
| Type | Description |
|---|---|
| Part Number | XL-ITR9606 |
| Manufacturer | XINGLIGHT |
| Product Type | SMD LED |
| Category | LED |
| Package / Case | Black thermoplastic through-beam photoelectric switch housing; dimensions shown on outline drawing, numeric dimensions not provided in extracted text |
| Component Type | Sensor |
| Device Composition | Infrared emission diode and NPN silicon phototransistor; packaged side by side on converging optical axis |
| Sensing Principle | Phototransistor receives radiation from IR emitter; object interruption blocks radiation when object is placed between emitter and detector |
| Peak Wavelength | 940 nm at IF=20 mA, Ta=25°C |
| Cut-off Visible Wavelength | 940 nm at λp=940 nm |
| Input Emitter Power Dissipation | 75 mW absolute maximum rating, Ta=25°C |
| Continuous Forward Current | 50 mA input emitter absolute maximum rating, Ta=25°C |
| Peak Forward Current | 1 A, pulse width <=100 us, duty cycle=1%, Ta=25°C |
| Reverse Voltage | 5 V input emitter absolute maximum rating, Ta=25°C |
| Output Detector Power Dissipation | 75 mW absolute maximum rating, Ta=25°C |
| Collector-Emitter Voltage | 30 V output detector absolute maximum rating, Ta=25°C |
| Emitter-Collector Voltage | 5 V output detector absolute maximum rating, Ta=25°C |
| Collector Current | 20 mA output detector absolute maximum rating, Ta=25°C |
| Operating Temperature | -20 to +85 °C, Topr |
| Storage Temperature | -40 to +85 °C, Tstg |
| Lead Soldering Temperature | 260 °C, soldering 2 mm from body for 5 seconds |
| Forward Voltage | Typ 1.2 V, Max 1.6 V at IF=20 mA, Ta=25°C |
| Forward Voltage | Typ 1.4 V, Max 1.85 V at IF=100 mA, pulse condition, Ta=25°C |
| Forward Voltage | Typ 2.6 V, Max 4.0 V at IF=1 A, pulse condition, Ta=25°C |
| Reverse Current | Max 10 uA at VR=5 V, Ta=25°C |
| Dark Current | Max 100 nA at Ee=0 mW/cm2, VCE=20 V, Ta=25°C |
| Collector-Emitter Saturation Voltage | Max 0.4 V at IC=2 mA, Ee=1 mW/cm2, Ta=25°C |
| Rise Time | Typ 15 us at VCE=5 V, IC=1 mA, RL=1000 ohm, Ta=25°C |
| Fall Time | Typ 15 us at VCE=5 V, IC=1 mA, RL=1000 ohm, Ta=25°C |
| Collector Current IC(ON) | Min 0.5 mA, Typ 10 mA at IF=20 mA, VCE=5 V, Ta=25°C |
| Forward Voltage Grading R2-4 | Min 1.2 V, Max 1.6 V at IF=20 mA |
| Collector Current Grading IC23-39 | Min 4 mA, Max 20 mA at IF=20 mA, VCE=5 V |
| Moisture Sensitivity Level | MSL 2 |
| RoHS Compliance | RoHS compliant version; Pb-free material stated |
| Recommended Wave Soldering Peak | 240±5 °C for 6 s |
| Wave Soldering Limit | Not more than once for peak welding process |
| Soldering Iron Temperature | Less than 300 °C for 3 s; one time per terminal; soldering iron capacity less than 25 W |
| Outline Dimension Units | mm |
| Outline Dimension Tolerance | ±0.3 mm unless otherwise specified |
| Datasheet Status | request_only |
Product Overview
XL-ITR9606 is a XINGLIGHT through-beam photo interrupter sensor listed in the LED category. Its internal structure consists of an infrared emission diode and an NPN silicon phototransistor packaged side by side on a converging optical axis. In operation, the phototransistor receives radiation from the IR emitter, and an object between the emitter and detector blocks that radiation to create an interruption signal.
The device uses a black thermoplastic through-beam photoelectric switch housing. Mechanical outline dimensions are specified in millimeters, with ±0.3 mm tolerance unless otherwise specified; numeric outline dimensions were not included in the extracted text. Optical and electrical values include 940 nm peak wavelength, typical 1.2 V forward voltage at IF=20 mA, max 10 uA reverse current at VR=5 V, and typical 15 us rise and fall times under the stated VCE, IC, and load conditions.
Absolute maximum ratings include 75 mW input emitter power dissipation, 50 mA continuous forward current, 1 A peak forward current under pulse conditions, 30 V collector-emitter voltage, 20 mA collector current, and -20 to +85 °C operating temperature. Assembly guidance includes MSL 2, Pb-free RoHS compliance, recommended wave soldering peak of 240±5 °C for 6 s, and soldering iron use below 300 °C for 3 s.
Key Features
- Infrared emitter and NPN silicon phototransistor construction
- Through-beam sensing by interruption of emitter radiation
- 940 nm peak wavelength at IF=20 mA
- 50 mA continuous forward current maximum rating
- 30 V collector-emitter voltage maximum rating
- 20 mA detector collector current maximum rating
- Typical 15 us rise and fall times
- IC(ON) min 0.5 mA, typ 10 mA
- MSL 2 moisture sensitivity classification
- Pb-free RoHS compliant version stated
- Wave soldering peak 240±5 °C for 6 s
- Outline drawing units in millimeters
Typical Applications
- Object interruption sensing
- Emitter-detector beam blocking
- Photoelectric switch detection
- Position interruption detection
- Presence detection between optical axes
- Through-beam sensor modules
- Board-mounted optical sensing
Procurement Notes
When requesting a quote for XL-ITR9606, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For LED and optoelectronic sourcing, brightness bin, wavelength or color temperature bin, forward voltage range, viewing angle, moisture sensitivity level and soldering process limits may affect final selection, availability and lead time.
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FAQ
What type of sensor is XL-ITR9606?
XL-ITR9606 is a through-beam photo interrupter sensor. It combines an infrared emission diode and an NPN silicon phototransistor arranged side by side on a converging optical axis.
How does the XL-ITR9606 detect an object?
The phototransistor receives radiation from the infrared emitter. When an object is placed between the emitter and detector, it blocks the radiation path and creates the interruption condition used for sensing.
What are the main optical and timing parameters?
The device has a 940 nm peak wavelength at IF=20 mA and Ta=25°C. Under VCE=5 V, IC=1 mA, RL=1000 ohm, and Ta=25°C, both rise time and fall time are typically 15 us.
What soldering limits apply to this part?
The extracted datasheet facts state a lead soldering temperature of 260 °C at 2 mm from the body for 5 seconds. Recommended wave soldering peak is 240±5 °C for 6 seconds, not more than once.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 3, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.